Tunnel Field Effect Transistors

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**42**

**Chapter 3**

*Jiang Cao*

**Abstract**

**1. Introduction**

**45**

Tunnel Field Effect Transistors

The successful isolation of graphene in 2004 has attracted great interest to search for potential applications of this unique material and other newborn mem-

bers of the two-dimensional (2-D) family in electronics, optoelectronics, spintronics and other fields. Compared to graphene, the 2-D transition metal dichalcogenides (TMDs) have the advantage of being semiconductors, which would allow their use for logic devices. In the past decade, significant developments have been made in this area, where opportunities and challenges co-exist. Stacking different 2-D materials significantly increases the already considerable design space, especially when a type-II band alignment is obtained. This chapter will describe the recent progresses in the tunnel field-effect transistors based on 2-D TMD van-der-Waals heterostructure, which is one of the promising candidates for increasingly important low-power mobile computation applications. Due to their small size, such devices are intrinsically dominated by quantum effects. This requires the adoption of a fairly general theory of transport, such as the nonequilibrium Green's functions (NEGF) formalism, which is a method having been more-and-more used for the

simulation of electron transport in nanostructures in recent years.

**Keywords:** two-dimensional material, van-der-Waals heterostructure, tunnel field-effect transistor, steep-slope switch, subthreshold swing

The invention of the transistor in 1948 is arguably the major technological break-through of the twentieth century. The transistors are the building blocks of today's microprocessors and computers that are everywhere around us. Nowadays, billions of transistors are integrated into a microchip of only a square centimeter. Since the Nobel prize attributed to Shockley, Brattain and Bardeen in the 1956, and the invention of integrated circuits in the same decade, considerable efforts have been put to keep miniaturizing the metal oxide semiconductor field effect transistors (MOSFETs). A conventional MOSFET structure with descriptions of its working principle are shown in **Figure 1**. From one technology node to the next, MOSFETs are conceived to be smaller (following Moore's law), faster and less

Based on Two-Dimensional

Material Van-der-Waals

Heterostructures
