**7. Conclusions**

We have given a literature survey on recently developed TFETs based on 2-D materials and their vdWHs. Compared with conventional MOSFETs, TFETs mainly work through the BTBT mechanism, resulting in large *I*ON/*I*OFF ratios within small supply voltages. To boost the on- and off-state behaviors simultaneously, heterojunctions should be adopted in the TFET design. Then, various novel TFETs based on the vdWHs are studied from structures to working mechanisms. We have also presented the quantum transport simulation method based on the NEGF formalism. However, no 2-D materials vdWH TFET in the experiments exhibits a satisfactorily overall performance. There is still a long way to realize 2-D TFET application. However, we hold an optimistic attitude toward vdWH TFET.

#### **Acknowledgements**

J.C. acknowledges support in part from the Natural Science Foundation of Jiangsu Province under grant number BK20180456 and from the Key Laboratory for Information Science of Electromagnetic Waves (MoE) under grant numbers EMW201906.

**Author details**

Technology, Nanjing, China

School of Electronic and Optical Engineering, Nanjing University of Science and

*Tunnel Field Effect Transistors Based on Two-Dimensional Material Van-der-Waals…*

*DOI: http://dx.doi.org/10.5772/intechopen.93143*

© 2020 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium,

\*Address all correspondence to: jiang.cao@njust.edu.cn

provided the original work is properly cited.

Jiang Cao

**57**

### **Conflict of interest**

The authors declare no conflict of interest.

*Tunnel Field Effect Transistors Based on Two-Dimensional Material Van-der-Waals… DOI: http://dx.doi.org/10.5772/intechopen.93143*
