**4. Conclusions**

Organic field effect transistors are new but very potential devices to be used as ionization radiation dosimeters. Different parameters like off current, on current, threshold voltage, current ratio and sub-threshold swing can be monitored as a function of ionizing radiation dose. Organic field effect transistors are capable of providing a tissue equivalent response to ionizing radiation. High Z counterparts, such as insulating layer and metal electrodes can be fabricated making use of organic dielectrics and conducting polymers (PEDOT:PSS or others), respectively. Moreover, organic materials possess outstanding properties, such as large area processing on lightweight and flexible substrates and ability to chemically tailor their properties. In particular, lightweight, flexible OFETs can be attached to the patient during the radiation treatment with possibility to read out parameters after treatment or operating transistors at very low voltages. For sure more work should be done on sensitivity improvement and characterization of such dosimeters. For example, it is important to check their linearity, energy and dose rate dependence, and so on. The sensitivity of such dosimeters can be improved by increasing the trap carrier density in organic semiconductor or dielectric layers. Similar to organic memory devices dielectric layer can be complex or with floating gate to store more charges and thus show the improved response to ionizing radiation.

**123**

**Author details**

, Zhihui Yi2

2 PhDs Network Inc., Toronto, Canada

provided the original work is properly cited.

\*Address all correspondence to: jjsayago@ier.unam.mx

Halifax, Nova Scotia, Canada

Temixco, Morelos, México

and Jonathan Sayago3

1 Department of Physics and Atmospheric Science, Dalhousie University,

3 Instituto de Energías Renovables, Universidad Nacional Autónoma de México,

© 2020 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium,

\*

Irina Valitova1

*Tackling the Problem of Dangerous Radiation Levels with Organic Field-Effect Transistors*

*DOI: http://dx.doi.org/10.5772/intechopen.92808*

*Tackling the Problem of Dangerous Radiation Levels with Organic Field-Effect Transistors DOI: http://dx.doi.org/10.5772/intechopen.92808*
