**9. References**

Alechin A.P. (2004). Structural organization of a matter at surface in nanotechnology – a way to nanotechnology. *Russian Usp. Mod. Radioelectr.,* V. 5, (2004), pp. 118-122

Aleksandrov L.N., Lovyagin R.N., Pchelyakov O.P., Stenin S.I. (1974). Heteroepitaxy of germanium thin films on silicon by ion sputtering. *J. Cryst., Growth*, V. 24-25, (1974), pp. 298-301

Mass Transfer Between Clusters Under Ostwald's Ripening 149

Joyce В.А., Vvedensky D.D., Avery A.R., Belk J.G., Dobbs H.T., Jones T.S. (1998). Nucleation

Kamins T.I., Medeiros-Ribeiro G., Ohlberg D.A.A., Stanley Williams R. (1999). Evolution of

Kan E. W. H., Koh B. H., Choi W. K., Chim W. K., Antoniadis D. A., Fitzgerald E. A. (2005).

Katsikas L., Eychmuller A., Giersig M., Weller H. (1990). Discrete excitonic transitions in

Kirchner H.O.K. (1971). Coarsening of grain-boundary precipitates. *Metall. Trans,* No. 2,

Kondratyev V.V., Ustyugov Yu.M. (1987). On kinetics of decay of oversaturated solid

Kreye H. (1970). Einflus von Versetzungen auf die Umlosung von Teilchen. *Zs. Metallkunde,*

Kukushkin S.A., Osipov A.V. (1998). Processes of condensation of thin films (Review of actual problems). *Russian Phys. Usp.*, V. 168, No. 10 (1998), pp. 1083-1116 Ledentsov N.N., Ustinov V.M., Ivanov S.V., Meltser B.Ya., Kopyev P.S., Bimberg D., Alferov

Ledentsov N.N., Shchukin V.A., Grundmann M., Kirstaedter N., Böhrer J., Schmidt O.,

Ledentsov N.N., Ustinov V.M., Schukin V.A., Kopyev P.S., Alferov J.I., Bimberg D. (1998).

Leonard D., Krishnamurthy M., Reaves C.M., Denbaars S.P., Petroff P.M. (1993). Direct

Lifshitz I.M., Slyozov V.V. (1958). On kinetics of diffusion decay of oversaturated solid

Lifshitz I.M., Slesov V.V. (1961). The kinetics of precipitation from supersaturated solid

Marquis E.A., Seidman D.N. (2001). Error! Hyperlink reference not valid.. *Acta Materialia*, V.

Mo Y.-W., Savage D.E., Swartzentruber B.S., Lagally M.G. (1990). Kinetic pathway in

Moison J.M., Houzay F., Barthe F., Leprince L., Andre E., Vatel O. (1994). Self-organized

Stranski-Krastanov growth of Ge on Si(001). *Phys. Rev. Lett*, V. 65, No. 8, (1990), pp.

growth of regular nanometer-scale InAs dots on GaAs. *Appl. Phys. Lett,* V. 64, No. 2,

GaAs surfaces. *Appl. Phys. Lett*, V. 63, No. 23, (1993), pp. 3203-3205

solution. *J. Phys. Chem. Solids*, V. 19, No.1/2, (1961), pp. 35-50

films. *Appl. Surf. Sci*, V. 130-132, (1998), pp. 357-366

1171

2005), pp. 19-20

(1971), pp. 2861 – 2864

V. 61, No. 2, (1970), pp. 108 – 113

*Phys. Usp.*, V. 166, No. 4, (1996), pp. 423-431

*Rev. B*, V. 54, No. 12, (1996), pp. 8743–8750

*Semicond.,* V. 32, No. 4, (1998), pp. 385-410

solutions. *JETP*, V. 35, No. 2 (1958), pp. 479-492

49, No. 10, (2001), pp. 1909-1919

1020-1023

(1994), pp. 196-198

mechanisms during MBE growth of lattice-matched and strained III–V compound

Ge islands on Si(001) during annealing. *J. Appl. Phys,* V. 85, No. 2, (1999), pp. 1159-

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering. *The 5th Singapore-MIT Alliance Annual Symposium*, Singapore, (January

quantum-sized CdS particles. *Chem. Phys. Letters,* V.172, No. 3-4, (1990) pp. 201-204

solution under partial relaxation of inner tensions. The model of partially coherent inter-phase boundaries. *Soviet Phys. Met. Metallogr.*, V. 64, No. 5, (1987), pp. 858-866

J.I. (1996). Ordered arrays of quantum dots in semiconductor matrices. *Russian* 

Bimberg D., Zaitsev S.V., Ustinov V.M., Zhukov A.E., Kop'ev P.S., Alferov Zh.I., Kosogov A.O., Ruvimov S.S., Werner P., Gösele U., Heydenreich J. (1996b). Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth. *Phys.* 

Heterostructures with quantum dots: obtaining, properties, lasers. *Russian Phys.* 

formation of quantum-sized dots from uniform coherent islands of InGaAs on


Alfimov S.M., Bykov V.A., Grebennikov E.P., Zheludeva S.I., Malzev P.P., Petrunin V.F.,

Andrievskiy R.A. (2002). Nanomaterials: the concept and modern problems. *Russian Chem.* 

Antonov A.V., Gaponova D.M., Danilzev V.M., Drozdov M.N., Moldavskaya L.D., Murel

Ardell A.J. (1972). On the coarsening of grain boundary precipitates. *Acta Metall*, Vol. 20,

Aronin A.S., Abrosimova U.Ye., Kiryanov Yu.V. (2001). Formation and structure of

Bartelt M.C., Evans J.W. (1992). Scaling analysis of diffusion-mediated island growth in surface adsorption processes. *Phys. Rev. B,* V. 46, No. 19, (1992), pp. 12675-12687 Bartelt N.C., Theis W., Tromp R.M. (1996). Ostwald ripening of two-dimensional islands on

Chakraverty B.K. (1967). Grain size distribution in thin films. I. Conservative systems. *J.* 

De-yong Wang, Li-jun Chen, Wei He, Qing-feng Zhan and Zhao-hua Cheng. (2006).

Dunaevskiy M.S., Krasilnik Z.F., Lobanov D.N., Novikov A.V., Titkov A.N., Laiho R. (2003).

Gerasimenko N.N. (2002). Nanoscale structures in implanted semiconductors. *Rusian Chem.* 

Goldfarb I., Hayden P.T., Owen J.H.G., Briggs G.A.D. (1997a) Nucleation of "Hut" Pits and

Goldfarb I., Hayden P.T., Owen J.H.G., Briggs G.A.D. (1997b). Competing growth

Hirth J. P., Pound G. M. (1963). Condensation and Evaporation, Nucleation und Growth

Jian-hong Zhu, Brunner K., Abstreiter G. (1998). Two-dimensional ordering of self-

technique at knocks. *Russian Phys. Semicond.*, V. 37, (2003), pp. 692-699 Gaponenko S.V. (1996). Optical processes in semiconductor nanocrystals (quantum dots).

Review. *Russian Phys. Semicond.*, V. 30, No. 4, (1996), pp. 577-619

Preferential arrangement of uniform Mn nanodots on Si(111)-7 × 7 surface. *J.* 

Vizualization of tangled nanoislands of GeSi vi silocon structures by atom-force

Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) in *In Situ* Scanning Tunneling Microscopy. *Phys. Rev. Lett,* V. 78, No. 20, (1997), pp. 3959-3962

mechanisms of Ge/Si(001) coherent clusters. *Phys. Rev. B,* V. 56, (1997), pp. 10459-

Kinetics; Band 11 der Serie "Progress in Material Science", herausgegeben von Bruce Chalmers, Pergamon Press, Oxford-London-Paris-Frankfurt; 190 Seiten Ivanov-Omsky V.I., Kolobov A.V., Lodygin A.B., Yastrebov S.G. (2004). Size distribution of

clusters of cobalt in amorphous carbon matrix. *Russian Phys. Semicond.*, V. 38, No.

assembled Ge islands on vicinal Si(001) surfaces with regular ripples. *Appl. Phys.* 

Si(001). *Phys. Rev. B,* V. 54, No. 16, (1996), pp. 11741-11751

*Physics. D*, *Applied Physics* V. 39, No. 2, (2006), pp. 347-350

*Phys. Chem. Solid.,* V. 28, (1967), pp. 2401-2412

*Microsystem Technique,* V. 8, (2004), pp. 2-8

*J*., V. 46, (2002), pp. (50-56)

(1972), pp. 602-609

*J*., V. 46, (2002), pp. 30-41

12 (2004), рp. 1463-1465

*Lett*, V. 73, No. 5, (1998), pp. 620-622

10468

1925-1933

*Semicond.*, V.39, No. 1. pp. 96-99

Chapligin Yu.A. (2004). Development of R&D in nanotechnologies in Russia.

A.V., Tulovchikov V.S., Shashkin V.I. (2005). Heterostructures InGaAs/GaAs with quantum dots for IR photodetectors within the region 3-5 μm. *Russian Phys.* 

nanocrystals in alloy Al86Ni11Yb3. *Russian Phys. Solid State,* V. 43, No. 11, (2001), pp.


Mass Transfer Between Clusters Under Ostwald's Ripening 151

Vengrenovich R.D. (1975). On kinetics of coalescence of disperse extractions at dislocation

Vengrenovich R.D. (1977). On calculation of distribution in surface disperse systems. *Ukr. J.* 

Vengrenovitch R.D. (1980a). On the bimodal distribution in disperse systems. *Phys. Stat. Sol.* 

Vengrenovitch R.D. (1980b). On kinetics of coalescence in thin films. *Ukr. J. Phys*., V. 25, No.

Vengrenovich R.D. (1982). On the Ostwald ripening theory. Overview 20. *Acta Metall,* V. 20,

Vengrenovich R.D. (1983). On solution of the problem of kinetics of coalescence by Ostwald.

Vengrenovich R.D., Polushina I.A. (1985). Influence of the volume part of disperse phase on

Vengrenovich R.D. (1998). The size distribution function under dislocation-matrix diffusion.

Vengrenovich R.D., Kovalik F.L., Foglinsky S.V. (1998). Size distribution function under dislocation-matrix diffusion. *Russian Pysics Journ.,* No. 10, (1998), pp. 25-35 Vengrenovich R.D., Gudyma Yu.V. (2001). Kinetics of optical thermal breakdown of thin semiconductor film. *Russian Phys. Solid State,* V. 43, No. 7, (2001), pp. 1171-1175 Vengrenovich R.D., Gudyma Yu.V. and Yarema S.V. (2001a). Growth of Second-Phase

Vengrenovich R.D., Gudyma Yu.V., Yarema S.V. (2001b). Ostwald's ripening of

Vengrenovich R.D., Gudyma Yu.V. and Nikirsa d.d. (2001c). Kinetics of the photoinduced

Vengrenovich R.D., Gudyma Yu.V. and Yarema S.V. (2002) Ostwald Ripening under dislocation diffusion. *Scripta Materialia,* V.46, No. 5, (2002), pp. 363-367 Vengrenovitch R.D., Gudyma Yu. V., Yarema S.V. (2005). Quantum dot formation in heteroepitaxial structures. *Phys. Stat. Sol. (b),* V. 242, (2005), pp. 881-889 Vengrenovich R.D., Moskalyuk A.V., Yarema S.V. (2006a). Size distribution function of

Vengrenovich R.D., Moskalyuk A.V., Yarema S.V. (2006b). Ostwald's ripening of

Vengrenovich R.D., Moskalyuk A.V., Yarema S.V. (2007a). Ostwald's ripening under mixedtype diffusion, *Russian Phys. Solid State*, V. 49, No. 1, (2007), pp. (13-18) Vengrenovich R.D., Ivanskii B.V., Moskalyuk A.V. (2007b). Generalized Lifshitz-Slyozov-

Vengrenovich R.D., Ivans'kyi B.V., Moskalyuk A.V. (2008a). Generalized Chakraverty-Wagner Distribution. *Ukr. J. Phys.*, Vol.53, No. 11, (2008), pp. 1101-1109

Wagner distribution. *JETP*, V. 131, No. 6, (2007). pр. 1040-1047

*Phys.: Condens. Matter,* V. 13, (Januar 2001), pp. (2947-2953)

*Phys. Semicond.*, V. 40, No. 3, (2006), pp. 276-280

*Phys.*, V. 51, No. 3, (2006), pp. 307-310

kinetics of coalescence under dislocation diffusion. *Soviet Phys. Met. Metallogr.,* V.

Particles upon the Loss of Coherency. *Russian Phys. Met. Metallogr.,* V. 91, No. 3,

nanostructures with nanodots. *Russian Phys. Semicond.,* V. 35, No. 12, (2001), pp.

phase transition at the surface of a semiconductor with renormalized bandgar. *J.* 

islands under dislocation-surface diffusion for semiconductor structures. *Rusian* 

heterostructures with quantum dots under dislocation-surface diffusion. *Ukr. J.* 

network. *Soviet Phys. Met. Metallogr.,* V. 39, (1975), pp. 435-439

*Phys,* V. 22, No. 2, (1977), pp. 219-223

*Rep. Ukr. Acad. Sc. А*, No. 7, (1983), pp. 28 – 33

*Rep. Ukr. Acad. Sc. А*, No. 1, (1998), pp. 112 – 120

*(a),* V. 62, (1980a ) pp. 39-44

59, No. 4, (1985), pp. 650-660

3, (1980b), pp. 442-447

(1982), pp. 1079 – 1086

(2001a), pp. 228-232

1440-1444


Müller P., Kern R. (1998). Equilibrium shape of epitaxially strained crystals (Volmer–Weber

Neizvestny I.G., Suprun S.P., Talochkin A.B., Shumsky V.N., Efanov A.V. (2001). Quantum

Nitsche H., Sommer F., and Mittemeijer E.J. (2005). The Al nano-crystallization process in amorphous Al, Ni,Y,Co. *J. Non Cryst. Solids*, V. 351, (2005), pp. 3760-3771 Ostwald W. (1900). Über die Vermeintliche Isometric des roten undgelben Quecksilberxyds

Pchelyakov O.P., Bolkhovityanov Yu.B., Dvurechensky A.V., Sokolov L.V., Nikiforov A.I.,

Reutov V.F., Dmitriev S.N. (2002). Ion-track nanotehnology. *Russian Chem. J*., V. 46, (2002),

Roko M. (2002). Prospects of development of nanotehnology: National programs, and

Safonov K.L., Trushin Yu.V. (2007). Criteria of transition of nanoclusters of Ge at Si from

Savchuk A.I., Rudko G.Yu., Fediv V.I., Voloshchuk A.G., Gule E.G., Ivanchak S.A., Makoviy

Savchuk A.I., Makhniy V.P., Fediv V.I., Kleto G.I., Savchuk S.A., Perrone A., Cultrera L.

Savchuk A.I., Fediv V.I., Ivanchak S.A., Makoviy V.V., Smolinsky M.M., Savchuk O.A.,

Shangjr Gwo, Chung-Pin Chou, Chung-Lin Wu, Yi-Jen Ye, Shu-Ju Tsai,Wen-Chin Lin, Minn-

at Room Temperature. *Phys. Rev. Letters,* V. 90, (2003), pp. 185506-185510 Shchukin V.A. and Bimberg D. (1999). Spontaneous ordering of nanostructures on crystal surfaces. *Review of Modern Physics,* V. 71, No. 4, (1999) pp. 1125-1171 Slyozov V.V. (1967). Coalescence of oversaturated solid solution under diffusion along the

Slyozov V.V., Sagalovich V.V., Tanatarov L.V. (1978). Theory of diffusive decomposition of

Stranski I.N., Krastanow L. (1937). Sitzungsberichte d. Akad. d. Wissenscaften in Wien, Abt.

V.V. (2010a). Evolution of : *CdS Mn* nanoparticle properties caused by *pH* of colloid solution and ultrasound irradiation. *Phys. Stat. Sol. (c).* V. 7, No.6, (2010), pp.

(2010b). Effects of co-doping in ZnO-based semimagnetic semiconductor thin films.

Perrone A., Cultrera L. (2010c). Formation and transformation of II-VI semiconductor nanoparticles by laser radiation. *J. Optoelectron. Adv. Mater.,* V. 12,

Tsong Lin. (2003) Self-Limiting Size Distribution of Supported Cobalt Nanoclusters

boundaries of blocks and dislocation lines. *Soviet Phys. Solid Staste*, V. 9, (1967), pp.

supersaturated solid solution under the condition of simultaneous operating of several mass-transfer mechanisms. *J. Phys. Chem. Solids,* V. 10, (1978), pp. 705-709 Slyozov V.B., Sagalovich V.V. (1987). Diffusion decay of solid solutions. *Soviet Phys. Usp.*, V.

Educational problems. *Russian Chem. J*., V. 46, (2002), pp. 90-95

pyramidal to cupola-like form. *JTP Lett.*, V. 33, (2007), pp. 7-12

dots of Ge in non-strained heterosystem GaAs/ZnSe/Ge/ZnSe. *Russian PTS*, V. 35,

und die Oberflachenspannung fester Körper. *Z. Phys. Chem,* Bd.34, (1900), pp. 495-

Yakimov A.I., Voightlender B. (2000). Silicon-germanium nanostructures with quantum dots: mechanisms of formation and electrical properties. *Russian Phys.* 

case). *J. Cryst. Growth*, V. 193, (1998), pp. 257-270

*Semicond.,* V. 34, No. 11, (2000), pp. 1281-1299

*J. Phys.: Conference Series,* V. 8, (2010), pp. 1-4

No. 9, (2001), pp. 1135-1142

503

pp. 74-80

1510-1512

1187-1191

No. 3, (2010), pp. 561-564

151, No. 1 (1987), pp. 67-103

lib. (1937), 146. P. 797


**Part 2** 

**Advances in Mechanical Engineering Aspects** 

