**5. Conclusions**

We have summarized the results of high-resolution studies of the atomic and electronic structure of few-layer graphene synthesized in UHV on β-SiC thin films epitaxially grown on the technologically relevant Si(001) wafers. LEEM, μ-LEED, ARPES, and STM studies revealed that graphene overlayer on the β-SiC/Si(001) substrates consists of nanodomains with six preferential lattice orientations and two preferential nanodomain boundary directions. The number of the boundary directions can be reduced to one using vicinal wafers with small miscuts from the Si(001) plane. Thus, self-aligned graphene nanoribbon system supported by a wide-gap semiconductor substrate could be fabricated using 2°-off Si(001) wafer. *In-situ* studies of the few-layer graphene synthesis on the β-SiC/Si(001) wafers performed in UHV using micro-spectroscopic methods demonstrate that thickness of the graphene overlayer can be controlled in the course of the high-temperature synthesis and the procedure can be stopped when a desirable number of graphene layers (e.g., 1, 2, or 3 ML) is synthesized.

## **Acknowledgements**

This work was carried out within the state task of ISSP RAS and supported by the Russian Foundation for Basic Research (Grant nos. 17-02-01139, 17-02-01291) and Erasmus plus mobility grant (2016-1-IE02-KA107-000479). We thank our colleagues S.V. Babenkov, H.-C. Wu, S.N. Molotkov, D. Marchenko, A. Varykhalov, A.A. Zakharov, B.E. Murphy, A. Locatelli, T.O. Menteş, S.L. Molodtsov, D.V. Potorochin, J. Buck, O. Seeck, M. Hoesch, and J. Viefhaus for fruitful discussions and help in the preparation of this manuscript.

**149**

**Author details**

Olga V. Molodtsova1

Russian Federation

provided the original work is properly cited.

\*Address all correspondence to: chaika@issp.ac.ru

*Controllable Synthesis of Few-Layer Graphene on β-SiC(001)*

*DOI: http://dx.doi.org/10.5772/intechopen.86162*

© 2019 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium,

\* and Victor Yu. Aristov1,2

, Alexander N. Chaika2

1 Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany

2 Institute of Solid State Physics of the Russian Academy of Sciences,
