**2.3 Process design and discussion**

In the reactor, chemical reaction is used to form the reactant (usually a gas) into a solid product, and a thin film is deposited on the surface of the wafer. This process is called CVD (Chemical Vapor Deposition). This process has (1) good step coverage, (2) energy with high aspect ratio gap filling, (3) good thickness uniformity, (4) high pure and dense, (5) when ratio can be controlled, (6) low stress for high film quality, (7) good electrical properties, (8) base plate and excellent film adhesion characteristics. **Figure 7** shows the system architecture of CVD in FAB.

The precipitation of products during the CVD process can be divided into the following steps: (1) the source gas diffuses to the substrate surface, (2) the substrate adsorbs the source gas, (3) the substances adsorbed on the substrate react chemically on its surface, (4) The precipitated material diffuses on the surface of the substrate, (5) The reaction product is separated from the gas-phase reactant, (6) The precipitated non-volatile material is deposited on the substrate surface by diffusion and the like. The composition, structure and performance of the products obtained in this chemical reaction can be controlled by changing the parameters of the reaction. The reaction parameters mainly include the type of gas, the gas reaction concentration, the delivery method of the reactant, the gas flow rate, the total gas pressure and the Area pressure, heating method, substrate material, substrate surface state, substrate reaction temperature, temperature distribution and gradient, etc.

When entering the 7-nanometer process, the channel material of the semiconductor PN junction must also be changed. Since the electron mobility of silicon is 1500 cm<sup>2</sup> / Vs, and germanium can reach 3900 cm<sup>2</sup> / Vs, and the implementation

The process of data decomposition is defined as follows: Let X is defined as the

X ¼ ð Þ Y*=*10, 000 (7)

X ¼ X þ 1 (8)

number of groups and Y as several data, as shown below Eqs. (7)�(8).

Algorithm (1): The most optimized attribute set searching algorithm.

Select the first reduction set, FR of attribute values.

Input: Optimized reduct sets, R1 until Rn Output: The most optimal reduct

In tabular representation, let (F, P) represent the soft set. If Q is the reduction of P, the soft set reduction set is defined as (F, Q) of the soft set

Find weighted table of soft set (F, Q) according to the decided weights.

Select the highest number of attribute values, HR if HR does not have the same number with attribute value AND HR has more than one

If X contains remainder, then

**Figure 6.**

set.

value then.

(F, P) where P ⊂ E.

Proceed to the next process

Proceed to the next process

Input: A soft set (F, E), set P. Output: Optimal decision.

Find all reducts of (F, P).

Input the set P of choice parameters.

Select one reduct set (F, Q) of (F, P).

else

else

**86**

Where the number of groups will be added to 1.

*The research cloud computing system and database architecture.*

*Linked Open Data - Applications,Trends and Future Developments*

if Reduct set R has more than one value then.

Algorithm (2): Soft set parameter reduction algorithm.

**Figure 7.**

*The system architecture of CVD in FAB.*

The silicon dioxide in the device, in this study, uses TEOS as the raw material, Tetraethyl Orthosilicate, the chemical formula is Si (OC2H5)4. High boiling point (about 169° C under normal pressure), store and use in liquid form. TEOS is liquid at room temperature and normal pressure. In order to increase the use of CVD process and the stability of the process, the TEOS container (about 40 70°C) is heated during use to increase its saturated vapor pressure In the gaseous use of TEOS in the deposition reaction of CVD. The process parameters and characteristics

**characteristic LP-TEOS PE-TEOS AP-TEOS/O3** Deposition temperature (°C) 650 750 300 400 350 450 Operating pressure (Torr) 1 10 0.1 5 500 700 Sedimentary composition SiO2 SiO2:H SiO2

*Study on IoT and Big Data Analysis of 12" 7 nm Advanced Furnace Process Exhaust Gas Leakage*

Refractive index 1.43 1.46 1.47 1.5 1.45 Dielectric constant 4.0 4.1 4.9 4.4 BOE(100:1) Etching rate ( ) 30 400 1200

) 1 <sup>3</sup> <sup>10</sup><sup>9</sup> (1 <sup>5</sup> <sup>10</sup><sup>9</sup>

Volatile Organic Compounds >90% <0.6 kg/hr (calculated based

Trichloroethylene >90% <0.02 kg/hr

Sulfuric acid droplets >95% <0.1 kg/hr

) 2.2 2.3 2.15

**efficiency standard**

) 10<sup>8</sup> <sup>3</sup> <sup>10</sup><sup>9</sup>

**Total control standards**

on methane)

>95% <0.6 kg/hr

According to the "Semiconductor Manufacturing Air Pollution Control and Emission Standards" announced by the Environmental Protection Agency of the Taiwan Government, air pollutants produced in the process should be discharged after being purified by the appropriate system, where the efficiency of the system or the total emissions of the entire factory should be Meet the standards listed in the

In order to achieve high precision and high output, modern high-energy processes such as plasma are important tools for semiconductor manufacturing. The physicochemical changes that occur in each reactor due to high energy are quite complicated, and the type and concentration of by-products cannot often be determined. These by-products usually have the following effects on the plant. (1) Incompatibility between by-products may increase the toxicity or explosiveness of

**3. FTIR sensing system of IoT and experiment settings**

of TEOS are summarized in **Table 3**.

**Table 4**.

**89**

Density(g/cm<sup>3</sup>

**Table 3.**

**Table 4.**

Stress value (dyne/cm<sup>2</sup>

and hydrofluoric acid

*Standards of FAB total emissions.*

*Summary of process parameters and characteristics of TEOS.*

*DOI: http://dx.doi.org/10.5772/intechopen.92849*

Nitric acid, hydrochloric acid, phosphoric acid

**Air pollutants Equipment**

#### **Figure 8.**

voltage of silicon devices is 0.75 0.8 V, while the germanium devices are only 0.5 V, so germanium was Considered to be the preferred material for MOSFET transistors, the first 7-nanometer wafer in IBM Lab used Ge-Si material. IMEC researched new germanium-doped materials and screened two channel materials that can be used for 7 nm: one is PFET composed of 80% germanium and the other is 25 50% mixed germanium FET Or 0 25% NFET mixed with germanium (**Figure 8**) [24, 25].

*Study on IoT and Big Data Analysis of 12" 7 nm Advanced Furnace Process Exhaust Gas Leakage DOI: http://dx.doi.org/10.5772/intechopen.92849*


#### **Table 3.**

*Summary of process parameters and characteristics of TEOS.*


#### **Table 4.**

*Standards of FAB total emissions.*

The silicon dioxide in the device, in this study, uses TEOS as the raw material, Tetraethyl Orthosilicate, the chemical formula is Si (OC2H5)4. High boiling point (about 169° C under normal pressure), store and use in liquid form. TEOS is liquid at room temperature and normal pressure. In order to increase the use of CVD process and the stability of the process, the TEOS container (about 40 70°C) is heated during use to increase its saturated vapor pressure In the gaseous use of TEOS in the deposition reaction of CVD. The process parameters and characteristics of TEOS are summarized in **Table 3**.

According to the "Semiconductor Manufacturing Air Pollution Control and Emission Standards" announced by the Environmental Protection Agency of the Taiwan Government, air pollutants produced in the process should be discharged after being purified by the appropriate system, where the efficiency of the system or the total emissions of the entire factory should be Meet the standards listed in the **Table 4**.
