**4. FTIR IoT experiment result and big data analysis**

From the measurement data of this study, it can be found (**Figure 12**) that the main reactant of the thin film process is TEOS for BPSG, so almost all reactions are carried out in the reaction chamber, or become a composite, which does not exist in

**Figure 12.** *Main exhaust pipe concentration trend (A point).*

**Figure 13.** *Results of scatter diagram for calculation of concentration distribution for one consecutive year (A point).*

## *Study on IoT and Big Data Analysis of 12" 7 nm Advanced Furnace Process Exhaust Gas Leakage DOI: http://dx.doi.org/10.5772/intechopen.92849*

the main exhaust gas pipeline, the beginning of the reaction concentration between 0.08 0.1 ppm only. C2H4 is mainly used for cleaning the reaction chamber, concentration between 0.15 0.25 ppm. Therefore, when the main process is carried out, the high concentration of the input will be cleaned, so the high concentration state can be seen in the main exhaust pipe. On the other hand, the CO is active because it is in the process of production, so it is difficult to find the concentration of the main exhaust pipe. **Figures 13** and **14** are the results of the study after optimizing the concentration values measured at the day of point A.

**Figure 15** shows secondary main exhaust pipe concentration trend. Due to the proximity of the process chamber, the concentrations are clearly detected, especially CO is more obvious, concentration between 1 1.7 ppm, and TEOS is liquid because it is normal and concentration between 0.4 0.6 ppm, so although the concentration near the reaction chamber is high, condensation occurs when entering the low temperature zone, so only this The section pipeline is measured, and the main exhaust pipe is not obvious. The C2H4 concentration is between 1.5 2.0 ppm.

#### **Figure 14.**

This study set up two measuring points in the 12″ factory of Hsinchu Science Park in Taiwan, as shown in **Figure 11**. **Table 5** shows the process parameters of the on-site process tools during our experiment, and **Table 6** shows the processing parameters of the on-site machine exhaust gas treatment equipment. Among them, Inlet flow rate (Qi) estimated from the TEOS injection = 89 LPM, Initial outlet flow rate (Qo) estimated from the TEOS injection = 292 LPM. Therefore, dilution

From the measurement data of this study, it can be found (**Figure 12**) that the main reactant of the thin film process is TEOS for BPSG, so almost all reactions are carried out in the reaction chamber, or become a composite, which does not exist in

*Results of scatter diagram for calculation of concentration distribution for one consecutive year (A point).*

**4. FTIR IoT experiment result and big data analysis**

*Linked Open Data - Applications,Trends and Future Developments*

ratio = Qo/Qi = 292/89 = 3.3.

**Figure 12.**

**Figure 13.**

**92**

*Main exhaust pipe concentration trend (A point).*

*Achievement of the calculation of the concentration value distribution for one consecutive year (A point).*

**Figure 15.** *Secondary main exhaust pipe concentration trend (B point).*

According to the OHSA regulations, this study is set in the cloud database for big data analysis and decision making, when the upper limit of TEOS, C2H4, CO are 0.6, 2.0, 1.7 ppm; the lower limit of TEOS, C2H4, CO is 0.4, 1.5, 1 ppm. The application architecture of this study can be extended to other semiconductor processes, so that IoT integration and big data operations can be performed for all processes, this is an important step in promoting FAB intelligent production and an important contribution of this study.
