**3. FTIR sensing system of IoT and experiment settings**

In order to achieve high precision and high output, modern high-energy processes such as plasma are important tools for semiconductor manufacturing. The physicochemical changes that occur in each reactor due to high energy are quite complicated, and the type and concentration of by-products cannot often be determined. These by-products usually have the following effects on the plant. (1) Incompatibility between by-products may increase the toxicity or explosiveness of

voltage of silicon devices is 0.75 0.8 V, while the germanium devices are only 0.5 V, so germanium was Considered to be the preferred material for MOSFET transistors, the first 7-nanometer wafer in IBM Lab used Ge-Si material. IMEC researched new germanium-doped materials and screened two channel materials that can be used for 7 nm: one is PFET composed of 80% germanium and the other is 25 50% mixed germanium FET Or 0 25% NFET mixed with germanium

(**Figure 8**) [24, 25].

*7 nm process device structure and characteristics.*

**Figure 8.**

**88**

**Figure 7.**

*The system architecture of CVD in FAB.*

*Linked Open Data - Applications,Trends and Future Developments*

the gas in the pipeline; (2) By-products may cause corrosion or embrittlement of exhaust pipe materials; (3) If the type and concentration of by-products cannot be determined, appropriate exhaust gas treatment equipment may be selected; (4) damage may be caused to the currently used treatment equipment, which may affect treatment efficiency. Based on the aforementioned production management requirements, the 12″ furnace FTIR system installed by FAB includes (1) confirmation of the characteristics of hazardous process exhaust gas; (2) evaluation of the processing efficiency of various process exhaust gas treatment equipment; (3) investigation of hazardous sources. Condition assessment during machine maintenance and repair; (4) Confirm the concentration and source of harmful gases and particulate matter in the clean room operating environment [26–28].

The principle of measurement is the same as the principle of Extractive FTIR, but the closed cavity is changed to open type and integrated IoT mechanism to connect to the cloud, which is suitable for a variety of gaseous pollutants (including organic

*Study on IoT and Big Data Analysis of 12" 7 nm Advanced Furnace Process Exhaust Gas Leakage*

(**Figure 9**). **Figure 10** shows the situation where this study was set on the site to set

gases and inorganic gaseous pollutants) in the atmosphere are monitored

the exhaust line of the furnace control process.

*DOI: http://dx.doi.org/10.5772/intechopen.92849*

*The furnace process tools area measurement point distribution in this study.*

*The process parameters of the on-site process tools during our experiment.*

**(ppm)**

*The processing parameters of the on-site machine exhaust gas treatment equipment.*

*CDO-N2 = 47 L/min; CDO outlet air = 57 L/min.*

*TMB does not have FTIR standard spectrum.*

**Process tools BPSG of A point BPSG of b point** TMB flow 30 sccm 30 sccm TEOS flow 300 sccm 300 sccm PH3 flow 0.77 slm 0.8 slm Chamber pressure 1.1 torr 0.8 torr

> **Average (ppm)**

TEOS 937 850 47 42 86% TMB\* 1430X 870X 11X 0.3 >99% C2H4 2108 2068 225 220 69% CH3OH 1335 1194 N.D N.D. >99% *Front and rear gas flow details of exhaust gas treatment equipment: N2-pump = 98 L/min; CDO-air = 89 L/min;*

**Inlet Outlet Efficiency**

**Average (ppm)**

**(%) Max**

**Max (ppm)**

**Figure 11.**

**Table 5.**

*\**

**91**

**Table 6.**

**concentration compound**

In this study, open-path FTIR was used to monitor the air quality of clean room to ensure the air quality of the working environment and the health of employees.

**Figure 9.** *The FTIR field setting architecture.*
