Dilute Magnetic Semiconductor

**Chapter 6**

Ions

**Abstract**

**1. Introduction**

**109**

*Kuldeep Chand Verma*

Diluted Magnetic Semiconductor

Transition Metal and Rare Earth

For advancement in future spintronics, the diluted magnetic semiconductors (DMSs) might be understood for their origin of ferromagnetic aptness. It not much clear to the ferromagnetism in DMS, that is intrinsic or via dopant clustering formation. For this, we have included a review study for the doping of transition metal and rare earth ions in ZnO. It is realized that the antiferromagnetic ordering is found in doped ZnO to achieve high-TC ferromagnetism. X-ray diffraction and Raman spectra techniques have been used to detect the wurtzite ZnO structure and lattice defects. Since ZnO has different types of morphology formation that is generally dependent on synthesis conditions and dopant level. The band gap energy of ZnO and lattice defect formation are shown by photoluminescence technique. The room temperature ferromagnetism is described with bound magnetic polaron

(BMP) model in which oxygen vacancies play a major role. However, the

Zn2+ atoms in the wurtzite structure as well as magnetic contribution.

**Keywords:** ZnO ferromagnetism, lattice structure, TEM, vacancies

temperature-dependent conditions are responsible for ferromagnetic ordering. The first principle calculation is used for dopant ions in ZnO for their replacement of

Diluted magnetic semiconductors (DMSs) and oxides raised hopes of applications based on single elements combining the logic functionalities of semiconductors with the information storage capabilities of magnetic elements [1]. The research on DMSs is fascinating during the 1980s on II-VI semiconductors with little magnetic impurities that opened the optical and electronic phenomenon to introduce magnetic field effects [2]. The DMS required high Curie temperature, TC, for a material. Initially, II-VI semiconductors such as CdMnTe and ZnMnSe are widely investigated as DMSs for which the valence of the cation matches with the common magnetic ions, i.e., Mn [3]. Since the hole induced ferromagnetic order in p-type InMnAs and GaMnAs, a lot of research is carried out on III-V-based DMSs that unfortunately failed to give room temperature ferromagnetism (RTFM). After that, a lot of efforts are carried out to result RTFM in III-V-based DMS, i.e., GaN, GaSb, InAs, and oxide-based DMS, ZnO, TiO2, SnO2, In2O3, etc. These DMSs are

ZnO: Magnetic Ordering with
