**7. References**


Fianite in Photonics 175

[26] A.N. Buzynin, V.V. Osiko, Yu.N. Buzynin, et al. // Bulletin of the Russian Academy of

[27] N.N. Sheftal and A.N. Buzynin// Vestnik Moscow Univ. 3 (1972) 102; Nat. Trans. Cent. The Yohn Crenan Library, 35w, 33rd St., Chicago IL 60616 USA.

[29] Masatomo Sumiya, Youichi Kurumasa, Kohji Ohtsuka, et al., J. Cryst. Growth, vol.

[30] E.I. Rau, A.N. Zhukov, E.B. Yakimov, // Solid-State Phenomena 1998, v. 327, p. 53–54.) [31] A.N.Buzynin, Yu.N.Buzynin, A.V.Belyaev, A.E.Luk'yanov, E.I.Rau. Growth and

[32] G.G. Shahidi. SOI technology for the GHz era. // IBM J. of Research and Development,

[33] S.J. Wang, C.K. Ong, S.Y. Xu, P. Chen, W.C. Tjiu, J.W. Chai, C.H. Huan, W.J. Yoo,

[34] S.J. Wang, C.K. Ong, S.Y. Xu, P. Chen, W.C. Tjiu, A.C.H. Huan, W.J. Yoo, J.S. Lim,

[37] H. Fukumoto, T. Imura and Y. Osaka. Heteroepitaxial growth of yttria–stabilized zirconia on silicon // Jpn. J. Appl. Phys., 1988, v.27, No.8, p. L1404–L1405 [38] T. Hata, K. Sasakia, Y. Ichikawa and K. Sasakia. Yttria-stabilized zirconia (YSZ)

[39] A.N. Buzynin, V.V. Osiko, V.V. Voronov, Yu.N. Buzynin at al. Epitaxial Fianit films on

[40] V.G. Beshenkov, А.G. Znamenskii, V.А., Marchenko at al. Widening temperature

[43] T. Khan, P. Brown, Yu. Vlasov et al. YBa2Cu3O7 on Sputter Deposited ZrO2 Buffered

[44] J. Sanghun; T. Matsuda; U. Akira; W. Kiyotaka; I. Yoko; H. Hyunsang; Interfacial

[45] N. Wakiya, T. Yamada, K. Shinozaki, and N. Mizutani: Heteroepitaxial growth of CeO2

sputtering. // Journal of technical physics, 2007, v.77, N5, p. 102–107 [41] J.M. Vargas, P. Brown, T. Khan et. al. Superconducting half-wave microwave resonator on YSZ buffered Si(100). // Applied Superconductivity, 2001, v. 11, N. 1, p.392 – 394 [42] С A. Copetti, H. Soltner, J. Schubert, et. al. High Quality Epitaxy of YBa2Cu307.5 on

alternative gate dielectrics, Semicond. Sci. Technol. 16, L13-L16 (2001) [35] T. Ngai, W.J. Qi, R. Sharma, J. Fretwell, X. Chen, J.C. Lee, S. Banerjee Electrical properties of ZrO2 gate dielectric on SiGe, Applied Physics Letters 76, 502-504 (2000) [36]S Abermann, G Pozzovivo, J Kuzmik et al MOCVD of HfO2 and ZrO2 high-*k* gate dielectrics

defects of GaAs and InGaAs films on porous GaAs substrates. // Thin Solid Films

J.S. Lim, W. Feng, W.K. Choi Cristalline zirconia oxide on silicon as alternative gate

W. Feng, W.K. Choi Electrical properties of crystalline YSZ films on silicon as

for InAlN*/*AlN*/*GaN MOS-HEMTs. // Semicond. Sci. Technol., 2007, v. 22, p. 1272–1275

heteroepitaxially grown on Si substrates by reactive sputtering. // Vacuum, 2000,

Si and GaAs. // Bulletin of the Russian Academy of Sciences. Physics., 2003,v.67,

range of epitaxial growth of YSZ films on Si [100] Расширение области температур эпитаксиального роста пленок YSZ на Si [100] under magnetron

Silicon- on-sapphire with the Multiple Buffer Layer YSZ/CeO2. Applied Physics

(100) Si - Processing and Characterization," Advances in Cryogenic Engineering

properties of a hetero-structure YSZ/p-(100)Si prepared by magnetron sputtering.

Thin Film on Si(001) with an Ultra Thin YSZ Buffer Layer. Thin Solid Films, 2000,

Sciences: Physics 74 (2010) 1027-1033

237—239 (2002) 1060.

2007, v. 515, p. 4445–4449.

v.59, issues 2-3, p. 381-389

Letters, 1993, v. 63, N 10, p.1429-1431

(Materials), 2000, v. 46, p. 901-905

Vacuum, 2002, vol. 65, no1, p. 19 - 25

№ 4, p.586–587

v.371, p.211-217.

2002, v.46, No. 2/3, p. 121–132.

[28] Smith, H. I.; Flanders, D. C.// Appl. Phys. Lett*.* 1978, *32*, 349.

dielectrics, Appl.Phys.Letters 78, 1604-1606 (2001)


[7] D. Pribat, L.M. Mercandalli, J. Siejka, J. Perriere Interface oxidation of epitaxial silicon deposits on (100) yttria stabilized cubic zirconia, J.Appl.Phys. 58, 313-320 (1985) [8] L.M. Mercandalli, D. Diemegand, M. Crose, Y. Sierka. Recent progress in epitaxial

[9] V.G. Shengurov, V.N. Shabanov, A.N. Buzynin, et al., Mikroelektronika*,* no. 6 (1996) 204. [10] A.N. Buzynin, V.V. Osiko, E.E. Lomonova, Yu.N. Buzynin, A.S. Usikov. Epitaxial films

[11]A.N. Buzynin, V.V. Osiko, Yu.K. Voron'ko, et al. // Izv. Akad. Nauk, Ser. Fiz. 69 (2005) 211. [12] P.A. Anderson, C.E. Kendrick, R.J. Kinsey, et. al. (111) and (100) YSZ as substrates for indium nitride growth. // Physica status solidi (c), 2005, v. 2, N.7, p. 2320 – 2323.

[14] S.J. Wang, C.K. Ong, S.Y. Xu, et al. Electrical properties of crystalline YSZ films on silicon as alternative gate dielectrics, Semicond. Sci. Technol. 16, L13-L16 (2001) [15] S.J. Wang, C.K. Ong. Rapid thermal annealing effect on the electrical properties of

[16] A.N. Buzynin, V.V. Osiko, E.E. Lomonova, at. el. Epitaxial films of III–V compound on

[17] A.N. Buzynin, V.V. Osiko, Yu.N. Buzynin, B.V. Pushnyi. Growth of GaN on fianite by

[19] A.N. Buzynin, V.V. Osiko, E.E. Lomonova, Yu.N. Buzynin, A.S. Usikov. Epitaxial films

[20] R. Paszkiewicz, B. Paszkiewicz, R. Korbutowicz, et al, MOVPE GaN Grown on Alternative Substrates // Cryst. Res. Technol.2001, v.36, N 8-10, p. 971-977. [21] P.D.C. King, T.D. Veal, S.A. Hatfield, et. al. X-ray photoemission spectroscopy

[22] T. Nakamura, Y. Tokumotoa, R. Katayamaa, et. al. RF–MBE growth and structural

[23] A.N.Buzynin and V.P. Kalinushkin, Laser characterization of sapphire defectts. Proc. of

[24] A.N.Buzynin and V.P. Kalinushkin New technique of laser characterization of

[25] G.G. Shahidi. SOI technology for the GHz era. // IBM J. of Research and Development,

[13] Y.Z. Yao-Zhi Hu, S.P. Sing-Pin Tay, J. Vac. Sci. Technol. B 19 (2001) 1706.

Proc.Soc.Photo-Opt. Istr.Eng. 623, 133-210 (1986)

Vol.512, Pittsburg, PA, p. 205–210.

18, p. 154-157.

2002, v. 66, n. 9, p. 1345-1350.

Vol.512, Pittsburg, PA, p. 205–210.

International Symposium" (LIMIS2010), Aug. 15th to 18th, 2010, Changchun, China.

2002, v.46, No. 2/3, p. 121–132.

Appl. Phys. Let., 2007, v. 91, p. 112103-1 – 112103-3.

J. of Crystal Growth, v. 301–302, April 2007, p. 508–512.

Applications, 1-4 October 2001, Munich, Germany, Article 389.

growth of semiconducting materials on stabilized zirconia single crystals,

of GaAs and GaN on fianite substrate. // Wide–Bandgap semiconductors for High Power, High Frequency and High Temperature. (Mat. Res. Soc. Simp. Proc. 1998).

crystalline YSZ gate dielectrics. // Semiconductor Science and Technology, 2003, v.

fianite substrates. // Proc. of International Congress on Advanced Materials, their Processes and Applications, 25–28 September 2000, Munich, Germany, Article 672.

MOCVD capillary epitaxy technique. // MRS Internet Journal of Nitride Semiconductor Research. 1998, Vol.4, Article 49. (http://nsr.mij.mrs.org/4/49/). [18] A.N. Buzynin, V.V. Osiko, Yu.N. Buzynin et al. // Izv. Ross. Akad. Nauk, Ser. Fiz.,

of GaAs and GaN on fianite substrate. // Wide–Bandgap semiconductors for High Power, High Frequency and High Temperature. (Mat. Res. Soc. Simp. Proc. 1998).

determination of the InN/yttria stabilized cubic-zirconia valence band offset. //

characterization of cubic InN films on yttria–stabilized zirconia (001) substrates. //

Inter. Congress" Materials Week-2001": Advanced Materials, their Processes and

sapphire and fianite crystals // Abstracts of the Laser Interaction with Matter


**1. Introduction**

based photovoltaic devices and displays.

**7** 

*Canada* 

**Hybrid Polyfluorene-Based** 

It is now well established that controlled delocalization in π-conjugated chains can lead to unique optoelectronic properties in polymer materials (MacDiarmid, 2001). While still being in a relatively early developmental stage, conjugated-polymer systems with a myriad of optoelectronic properties can now be synthesized at relatively low costs. Albeit a very promising technology, there remains some key challenges to address before efficiently integrating these conjugated-polymer systems into large scale applications including displays, biomedical imaging & sensing, lab-on-a-chip, solid-state lighting and photovoltaic

Pending material issues still limit the functionality and the overall performances of these emerging material systems, while photo-chemical degradation can severely restrict their lifetimes. Since the main photo-chemical degradation process is usually a photo-oxidation reaction that truncates the conjugation length of the polymer chain to reduce the π-electron delocalization, this undesireable process can be significantly suppressed by simply permeating the structure with a transparent dielectric coating. Using such coating technologies, lifetimes of 20 years have now been demonstrated for commercial polymer-

In the last few years, the hybrid integration of semiconductor nanocrystals within conjugated polymer host systems has grown into a very active research area as it provides a new pathway of (1) improving the conjugated polymers' optoelectronic properties and/or

This chapter will present a general overview of hybrid polymer-nanocrystal material systems and their application as low-cost optoelectronic devices. Using a device-engineering perspective, we will focus our attention on the synthesis & processing, structural and optoelectronic properties of polyfluorene-based systems interfaced with lead-sulfosalt (PbS) semiconductor nanocrystals grown by hot-colloidal methods. Using this specific hybrid material system as our case study, we will begin by providing a general understanding of pure polymer-based type-II heterostructures and their limitations. Then, we will demonstrate how the incorporation of lead-chalcogenide quantum dots can be used to (1) add new functionality and (2) improve the performances of those all polyfluorene-based optoelectronic devices. Most importantly, we will also see that the hybrid integration of

devices and architectures (Arias et al., 2001; Moons, 2002; Morteani et al., 2003).

(2) providing added functionality to the conjugated polymer-based structures.

**Optoelectronic Devices** 

Sylvain G. Cloutier

*École de Technologie Supérieure* 

