**2. Techniques for the synthesis of fianite crystals Fianite substrates**

Peculiarities of the synthesis, the investigation techniques and properties of the crystals have been considered in details in [3-5]. In this chapter only brief information concerning synthesis of the crystals and manufacturing the substrates is presented. A novel laser technique developed for instant monitoring of defects in the substrates and in bulky fianite and sapphire crystals is also considered

#### **2.1 Crystal growth of fianites using installations with cold containers of 130-700 mm diameter**

The growth technique of the crystals was elaborated and developed using following installations: "Crystal -407" (5.28 MHz frequency, 60 kW power, ØCC 130mm); "Crystal - 403" (1.76 MHz, 160 kW, ØCC 400mm); "Crystal -403M" (0.4-0. 88 MHz, 600 kW, ØCC 700mm) (Fig.2).

Fig. 2. The scheme of manufacturing of zirconia-based crystals (a); Installations for direct RF melting of dielectric materials in a cold container (CC) "Crystal -403M" (0.4-0. 88 MHz frequency, 600 kW power, ØCC 700mm) (b).

The use of fianite, as well as ZrO2 and НfO2 oxides instead of SiO2 as gate dielectrics in CMOC technology, which can be considered for microelectronics as a basic one, is of peculiar interest [14, 15]. That is associated with the increase of leakage currents by the increase of the integration level when conventional SiO2 is used. Therefore, a change of SiO2 over dielectrics with higher values of dielectric constant (high-k-materials) is required. Due to higher value of dielectric constant (25÷30 for fianite [4, 14, 15] instead of 12 for SiO2) it is possible to provide

A number of modern aspects of the application of fianite in photonics are analyzed in this

Peculiarities of the synthesis, the investigation techniques and properties of the crystals have been considered in details in [3-5]. In this chapter only brief information concerning synthesis of the crystals and manufacturing the substrates is presented. A novel laser technique developed for instant monitoring of defects in the substrates and in bulky fianite

**2.1 Crystal growth of fianites using installations with cold containers of 130-700 mm** 

The growth technique of the crystals was elaborated and developed using following installations: "Crystal -407" (5.28 MHz frequency, 60 kW power, ØCC 130mm); "Crystal - 403" (1.76 MHz, 160 kW, ØCC 400mm); "Crystal -403M" (0.4-0. 88 MHz, 600 kW, ØCC

a b

frequency, 600 kW power, ØCC 700mm) (b).

Fig. 2. The scheme of manufacturing of zirconia-based crystals (a); Installations for direct RF melting of dielectric materials in a cold container (CC) "Crystal -403M" (0.4-0. 88 MHz

the same electric capacity using much more thick layers of the gate oxide.

**2. Techniques for the synthesis of fianite crystals** 

chapter.

**diameter** 

700mm) (Fig.2).

**Fianite substrates** 

and sapphire crystals is also considered
