**Author details**

Irving Eduardo Cortes-Mestizo1 , Edgar Briones2 , Leticia Ithsmel Espinosa-Vega3 and Victor Hugo Mendez-García<sup>3</sup> \*

1 CONACYT-Center for the Innovation and Application of Science and Technology, Autonomous University of San Luis Potosí, San Luis Potosí, Mexico

2 Department of Mathematics and Physics, ITESO Jesuit University of Guadalajara, Tlaquepaque, Mexico

3 Center for the Innovation and Application of Science and Technology, Autonomous University of San Luis Potosí, San Luis Potosí, Mexico

\*Address all correspondence to: victor.mendez@uaslp.mx

© 2020 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

**347**

*Semiconductor Surface State Engineering for THz Nanodevices*

high-performance quantum dot lasers on silicon. IEEE Journal of Quantum Electronics. 2019;**55**(2):2000511. DOI:

semiconductors for solar cells. In: Asahi H, Horikoshi Y, editors. Molecular Beam Epitaxy. 1st ed. West Sussex, UK: John Wiley and Sons Ltd; 2019. pp. 265-277

10.1109/JQE.2019.2901508

[8] Sugaya T. MBE of III-V

[9] Kuzmik J. Power electronics on InAlN/(In)GaN: Prospect for a record performance. IEEE Electron Device Letters; 2001;**22**:510-512. DOI:

[10] Daghestani NS, Cataluna MA, Berry G, Ross G, Rose MJ. Terahertz emission from InAs/GaAs quantum dot based photoconductive devices. Applied Physics Letters. 2011;**98**:181107. DOI:

[11] Umansky V, Heiblum M. MBE growth of high-mobility 2DEG. In: Henini M, editor. Molecular Beam Epitaxy from Research to Mass Production. 1st ed. Elsevier Inc; 2013. pp. 121-137. DOI: 10.1016/ B978-0-12-387839-7.00006-3

[12] Umansky V, de-Picciotto R, Heiblum M. Extremely high-mobility two-dimensional electron gas: Evaluation of scattering mechanisms. Applied Physics Letters. 1997;**71**:683-

685. DOI: 10.1063/1.119829

Ravichandran T, Mohankumar P, Prajoon P, Arivazhagan L, et al. InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review. AEU-International Journal of Electronics and Communications. 2018;**94**:199-214. DOI: 10.1016/j.aeue.2018.07.015

[14] Lüth H. Solid Surfaces, Interfaces and Thin Films. 5th ed. New York,

[13] Ajayana J, Nirmal D,

10.1109/55.962646

10.1063/1.3586774

*DOI: http://dx.doi.org/10.5772/intechopen.86469*

[1] Chamberlain JM. Where optics meets electronics: Recent progress in decreasing the terahertz gap. Philosophical Transactions. Series A,

Engineering Sciences. 2004;**362**:199- 211. DOI: 10.1098/rsta.2003.1312

[2] Maple L, Gow PC, Apostolopoulos V. Simulation of THz generation and propagation from photo-Dember emitters. The Journal of the Optical Society of America B. 2018;**35**(7):1552- 1556. DOI: 10.1364/JOSAB.35.001552

[3] Zhao H, Yang L, Zou H, Ma X, Hao Y. Enhancement of negative differential mobility effect in recessed barrier layer AlGaN/GaN HEMT for terahertz applications. IEEE Transactions on Electron Devices. 2019;**66**(3):1236- 1242. DOI: 10.1109/TED.2019.2893640

[4] Belkin M, Capasso F. New frontiers in quantum cascade lasers: High performance room temperature terahertz sources. Physica Scripta. 2015;**90**:1-13. DOI: 10.1088/0031-949/90/11/118002

[5] Kojima O, Tarui Y, Shimazu H, Kita T, Majeed A, Ivanov P, et al. Wide frequency tuning of continuous terahertz wave generated by difference frequency mixing under excitonexcitation conditions in a GaAs/AlAs multiple quantum well. Physical Review Applied. 2018;**10**:044035. DOI: 10.1103/

PhysRevApplied.10.044035

10.1088/1361-6463/aab11d

[7] Norman JC, Jung D, Zhang Z,

Wan Y, Liu S, Shang C, et al. A review of

[6] Ponomarev DS, Lavrukhin DV, Yachmenev AE, Khabibullin RA, Semenikhin IE, Vyurkov VV, et al. Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs. Journal of Physics D: Applied Physics. 2018;**51**(13):135101. DOI:

Mathematical, Physical, and

**References**

*Semiconductor Surface State Engineering for THz Nanodevices DOI: http://dx.doi.org/10.5772/intechopen.86469*
