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**10** 

*Italy* 

Romolo Marcelli et al.\* *CNR-IMM Roma, Roma,* 

**Characterization and Modeling** 

**of Charging Effects in Dielectrics** 

**for the Actuation of RF MEMS Ohmic** 

**Series and Capacitive Shunt Switches** 

Charge accumulation in dielectrics solicited by an applied voltage, and the associated temperature and time dependencies are well known in scientific literature since a number of years [1]. The potential utilization of materials being part of a device useful for space applications is a serious issue because of the harsh environmental conditions and the necessity of long term predictions about aging, out-gassing, charging and other characteristic responses [2], [3]. Micro-mechanical Systems (MEMS) for RF applications have been considered for sensor applications as well as for high frequency signal processing during more than one decade [4], [5], [6], [7], [8], [9]. In this framework, RF MEMS switches are micro-mechanical devices utilizing, preferably, a DC bias voltage for controlling the collapse of metalized beams [8]. Magnetic [10], thermal [11] and piezoelectric [12] actuations have been also evaluated, but the electrostatic one seems to be until now preferred for no current flowing, i.e. a virtual zero power consumption, less complicated manufacturing processes and more promising reliable devices [13]. During the last few years, several research activities started to release the feasibility of RF MEMS switches also for Space Applications [14], [15], [16]. The electrostatic actuation of clamped-clamped bridges or cantilevers determines the ON and OFF states depending on the chosen configuration. As well established, RF MEMS switches are widely investigated for providing low insertion loss [8], no or negligible distortion [17], [18] and somehow power handling capabilities [19], [20], [21], [22] for a huge number of structures already utilizing PIN diodes for high frequency signal processing. Actually, redundancy switches as well as single pole multiple throw (SPMT) configurations, [23], [24], matrices [25] true time delay lines (TTDL) [26], [27] and phase shifters [28], [29] for beam forming networks in antenna systems could benefit from their characteristics. On the

Andrea Lucibello1, Giorgio De Angelis1, Emanuela Proietti1, George Papaioannou2,

*4Bruno Kessler Foundation, Center for Materials and Microsystems, Povo (TN), Italy* 

Giancarlo Bartolucci1,3, Flavio Giacomozzi4 and Benno Margesin4

*3University of Roma "Tor Vergata" – Electronic Eng. Dept., Roma, Italy* 

**1. Introduction** 

 \*

*1CNR-IMM Roma, Roma, Italy 2University of Athens, Athens, Greece* 

