Abstract

Vacancy migration energy is a key factor for irradiation resistance of nuclear materials and also a fundamental parameter for modeling and should be experimentally calculated in advance. A new method together with a formula was developed for measuring the vacancy migration energy on high-voltage electron microscope (HVEM) from the temperature dependence of the growth speed of a dislocation loop in consideration of other sink effects including surface and grain boundary on point defects. Anti-noise property and the other characteristics of the three different methods have also been analyzed and discussed to help choose the appropriate method to measure the vacancy migration energy when in need in different situations.

Keywords: vacancy migration energy, in situ HVEM, measurement of Em
