7. Conclusions

The silicon amorphous nanoclusters in as-deposited SiOx and SiNx films and silicon nanocrystals in the annealed films were studied using structural and optical methods. To analyze the sizes of silicon nanocrystals from the analysis of Raman scattering data, the phonon confinement model was refined.

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From the analysis of XPS, Raman, and IR spectroscopy data, it has been established that pure random mixture and random bonding models do not adequately describe the real structure of the SiOx and SiNx films. The intermediate model was proposed. The nanoscale potential fluctuations in SiOx and SiNx films can be interpreted in the framework of the proposed model. The memristor effects in SiOx-based nonmetal structures were demonstrated.
