*Nanoscale Plasmon Sources: Physical Principles and Novel Structures DOI: http://dx.doi.org/10.5772/intechopen.90842*

rates in the QDs. This structure also has two aluminum contacts for electrical pumping into the gain medium. In this structure, the electrical pump current flows perpendicular to the plasmonic mode propagation direction into the germanium quantum dots (QDs) in order to produce excitons. This electron–hole pairs


#### **Table 4.**

*Design characteristics of the lateral MSMSM structure.*


#### **Table 5.**

*Performance characteristics of the proposed nanolasers.*

The proposed structure for the nanolaser according to **Figure 9** consists of a corrugated metal nanostrip with two arrays of n + doped tensile-strained germanium quantum dots (QDs) at both sides. In addition, two high-doped p + germanium layers are used for better field confinement and providing higher carrier generation

*Schematic illustration of the corrugated lateral MSMSM structure: (a) 3D schematic, (b) transverse cross*

**Description Symbol Value Unit** Resonator size *WR* 350 nm Resonator height *HR* 98 nm Top metal thickness *XAu* 40 nm Bottom buffer thickness *XBottom* 10 nm Bottom buffer thickness *XTop* 10 nm Number of QWs *NQW* 4 — QW thickness *XQW* 7 nm Barrier wall thickness *XBarrier* 10 nm Thickness of p-doped Ge buffer *XBuffer* 20 nm Ge alloy percent *x* 85 % Doping concentration of the QWs *ND* <sup>4</sup> <sup>10</sup><sup>19</sup> cm<sup>3</sup> Doping concentration of the Ge buffer *NA* <sup>1</sup> 1019 cm<sup>3</sup>

**Table 3.**

*Nanoplasmonics*

**Figure 9.**

**76**

*section, and (c) top view.*

*Design parameters of the third structure.*

recombine through the radiative recombination process and transfer their energy to the surface plasmon polaritons (SPPs) propagating at interfaces of the Ag metal strip and its side semiconductor layers. The design characteristics of this device are provided in **Table 4**.

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*DOI: http://dx.doi.org/10.5772/intechopen.90842*

*Nanoscale Plasmon Sources: Physical Principles and Novel Structures*

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The introduced nanolaser devices can be adequately analyzed using the aforementioned theoretical phenomena. By means of Finite difference Time Domain (FDTD) method for mode analysis and numerically solving nonlinear rate equations of (37) output performance of the proposed structures can be derived. Also, needed parameters are either extracted from experimental papers or found using numerical methods according to [17, 31, 32]. Resulting from our analysis, the performance of nanolaser structures of 5.1 can be concluded in **Table 5** which demonstrates a considerable performance with respect to a reference similar device [15].
