**Abstract**

In order to maintain technological superiority over other systems, modern equipment for aerospace, defence and security (ADS) applications require advanced integrated circuits operating at microwave and millimetre wave frequencies. High integration is necessary to obtain low SWaP-C features thus enabling the installation of this category of equipment in unfriendly environments: compact spaces, and subject to heavy mechanical loads and temperature stress. This chapter reviews the topology, technology and trends of microwave circuits in UWB systems for ADS applications. Amplification at high frequency is a crucial function: high power amplifiers in the transmit (Tx) chain and low-noise amplifiers in the receive (Rx) chain will be revised, in addition to medium-power (gain) amps. Signal conditioning and routing is also essential: MIMO architecture are becoming the standard and therefore switching and signal phasing and attenuation is increasingly needed, to obtain the desired beam steering and shaping. Each type of circuits leverages the benefits of either gallium nitride (GaN) or gallium arsenide (GaAs), and the role of the semiconductor will be explained. Finally, an outline on multi-functional circuits (single-chip front-ends and core-chips) will be presented: the trend is to realize the whole microwave section of a Tx/Rx module with only to MMICs that perform all the functionalities requested at microwave frequencies.

**Keywords:** microwave front-ends, microwave measurement circuits, microwave transmit/receive modules, multi-functional MMICs, AESA, III–V semiconductors
