**6. Conclusion**

We have defined the main conditions required for a diode-OPO structure based on a vertical coupler, and we have described the passive properties of this source. Phase matching can be dynamically controlled through wavelength and temperature tuning. We achieve transfer to a higher order mode of the structure, with sufficient efficiency. The taper layout can still be improved via further optimization.

Overall, this design predicts promising results for the fabrication of an integrated diode-OPO based on GaAs. Unlike all-in-one DOPO configurations, this device does not require record-low propagation losses in the laser diode.

While fabrication of this device is complex, epitaxy regrowth can be avoided completely if the laser DFB grating can be defined at the surface. Most of the technological complexity occurs in the various etching levels necessary to define the structure, from tapers to DFB grating to DBRs.

To ensure feasibility of this project, future work should focus on laser design, particularly on expected optical power and impact of doping on the transfer.

**123**

**Author details**

provided the original work is properly cited.

Semiconductors Joint Group, Grenoble, France

Alice Bernard1,2, Jean-Michel Gérard2

Diderot–CNRS, Paris, France

© 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium,

, Ivan Favero1

1 Laboratoire Matériaux et Phénomènes Quantiques, UMR 7162, Université Paris

2 Université Grenoble-Alpes, CEA, INAC-PHELIQS, CEA-CNRS Nanophysics and

\*Address all correspondence to: giuseppe.leo@univ-paris-diderot.fr

and Giuseppe Leo1

\*

*Widely Tunable Quantum-Well Laser: OPO Diode Around 2 μm Based on a Coupled Waveguide…*

This work is supported by a public grant overseen by the French National Research Agency (ANR) as part of the project DOPO. The authors thank the Commissariat à l'Energie Atomique and Direction Générale de l'Armement for the PhD funding. We thank Michel Krakowski and Bruno Gérard for their information

*DOI: http://dx.doi.org/10.5772/intechopen.80517*

**Acknowledgements**

and stimulating discussions.

*Widely Tunable Quantum-Well Laser: OPO Diode Around 2 μm Based on a Coupled Waveguide… DOI: http://dx.doi.org/10.5772/intechopen.80517*
