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steeply rising low-frequency branch in Z<sup>00</sup> vs. Z<sup>0</sup> plots has been done by Pandey et al. [17]. Ba1-xLaxTi1-xCoxO3 (x ≤ 0.20) ceramic showed a shifted arc in Z" vs. Z' plot and was analysed by using equivalent circuit model involving a series resistance [19]. In this system, presence of two PTCR components, one due to grain boundary as usual and the other in grains was observed by impedance spectroscopy. Study of semiconducting BaTiO3 was carried out by using a model containing series resistance [18]. Ceramic system Ca1-xYxTi1-xCoxO3 could be represented by an equivalent circuit model containing two parallel RC's and a CPE connected in series [21]. Models useful for representing magnetic ceramic are not covered in this paper. A detailed analysis of models involving inductive component L is available in [11] where magnetic ceramic YIG has been studied by using impedance spectroscopy. While using the impedance spectroscopy, it is important to keep in mind that the observed impedance values are those what the impedance analyser sees at its input points. These values include the contributions from the connecting leads, cables, sample holder and electrodes. It has been found that the electrode-sample contact behaviour changes with the nature of the sample [15]. The sample-electrode contact effects have been studied in detail in [23–35]. A method has been proposed for removing the sample holder contributions [23], which involves doing the complete impedance spectroscopic analysis without the sample, finding an empirical functional relation for the impedance behaviour and then subtracting this from the results obtained with sample placed in the sample holder. Presently available analysers provide with a lead correction step before an actual measurement is done.

, M″ vs log f for BaFexTi1–xO3 x = 0.05 at 600 K.

(a) Experimental Setup for Impedance Measurements. Experimental and fitted values of (b) M″ vs M<sup>0</sup> for

Ceramic Materials ‐ Synthesis, Characterization, Applications and Recycling

Figure 7.

90

BaFexTi1–xO3 (x = 0.05) at 600 K and (c) M<sup>0</sup>

Shukdev Pandey<sup>1</sup> \*, Devendra Kumar<sup>1</sup> , Om Parkash<sup>1</sup> and Lakshman Pandey<sup>2</sup>

1 Department of Ceramic Engineering, IIT(BHU), Varanasi, India

2 Department of Physics and Electronics, Rani Durgavati University, Jabalpur, India

\*Address all correspondence to: spandey.rs.cer12@itbhu.ac.in

© 2019 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
