**3.2. The mechanism of resistive switching in graphene/graphene oxide**

The mechanism of resistive switching in G/GO was studied in detail in a number of works [12–17] in which it was shown that the migration of oxygen-containing groups in GO plays an important role. One sp3 carbon-oxygen or carbon-hydroxyl bond on 106 sp2 bonds reduced conductivity in carbon nanomaterials by 50% [18]. Graphene oxide with a sp3 carbon configuration possessing low electrical conductivity was switched in an electric field locally in the sp<sup>2</sup> configuration of carbon (**Figure 6**), which led to high electrical conductivity. This process can be controlled both by adsorption/desorption of oxygen and by migration of oxygen-related groups.
