Abstract

A simple single-atom transistor configuration is suggested. The transistor consists of only a nanowire, a single-point impurity (the atom), and an external capacitor. The transistor gate is controlled by applying a transverse voltage on the capacitor. The configuration does not rely on tunneling current and, therefore, is less sensitive to manufacturing processes since it requires less accuracy and fewer production processes. Moreover, unlike resonant-tunneling devices, the proposed transistor configuration does not suffer from a compromise between high speed and high extinction ratio. In fact, it is shown that this transistor can be extremely fast, without affecting the signal's extinction ratio, which can be as high as 100%.

Keywords: quantum dots, quantum point defect, point impurity, quantum transistor, single-atom transistor, field-effect transistor
