Meet the editor

Prof. Dr. Vadim Glebovsky was born in 1936 in Ekaterinburg/ Urals, Russia. After graduate and postgraduate study he obtained his Ing. Dipl. in Physical Chemistry and Practical Metallurgy from the Federal Ural University in 1961. He received his PhD (1963) from the Baikov Institute of Metallurgy RAS on scientific studies of purifying liquid metals by oxide melts using HF levitation. He was then invited to the Institute of Solid State

Physics RAS (1969) as Chief of the Material Science/Physical Metallurgy Department, working mainly with growing/studying single crystals of high-purity refractory metals. He was habilitated (1985) with his doctoral degree for his research into the growing processes and substructure features of single crystals of W, Mo, Nb, etc. Since 1988 he has been Professor of the Institute of Solid State Physics, Chernogolovka, Russia.

As a multivisiting professor at the Technical University, Eindhoven, Netherlands, from 1992 to 2002, together with Prof. H.H. Brongersma and his students, Prof. Glebovsky studied the bulk and surface processes of single crystals of W and Mo by low-energy ion scattering. In the period 1994–1995 he visited the Lawrence Livermore National Laboratories (Livermore, California, USA), where, together with Dr. M. Campbell, they studied bicrystals of high-purity Mo. At the Max-Planck-Institutes für Metalforschung (Stuttgart, Germany), together with Prof. H. Fischmeister and Dr. P. Gumbsch, Prof. Glebovsky studied the cleavage fracture and brittle-to-ductile transition in W single crystals (1995), and later on, also at this institute, together with Dr. D. Brunner, studied the plastic properties of high-purity W single crystals (1998).

Nowadays, Prof. Glebovsky's scientific interests extend from certain aspects of the application of high-purity refractory metals and compounds as effective diffusion barrier layers in very-large-scale intergation to a new generation of high-sensitivity detectors made of low-radioactivity Ti for registration of "dark matter" particles. Prof. Vadim Glebovsky has published more than 320 scientific articles and patents, one book in Russian on levitation melting, five book chapters, and has edited three books on various aspects of functional materials.

Contents

**Section 1**

**Section 2**

Mechanical Behavior *by Vadim Glebovsky*

*by Evgeniy N. Mokhov*

*and Vladimir N. Kurlov*

Vapor Deposition Method

Epitaxial Growth of Thin Films *by Daniel Rasic and Jagdish Narayan*

*and Ana Paula Badan Ribeiro*

*and Gabriela Ocón*

**Section 3**

**Preface III**

Introduction **1**

**Chapter 1 3**

Growing Single Crystals **17**

**Chapter 2 19**

**Chapter 3 45**

**Chapter 4 67**

Usual and Unusual Growth **79**

**Chapter 5 81**

**Chapter 6 97**

Conventional and Unconventional Crystallization Mechanisms

*Maria Aliciane Fontenele Domingues, Daniel Barrera-Arellano* 

*by Kamila Ferreira Chaves, Thaís Jordânia Silva,* 

Growth of Single-Crystal LiNbO3 Particles by Aerosol-Assisted Chemical

*by José G. Murillo, José A. Ocón, Guillermo M. Herrera, José R. Murillo-Ochoa* 

Introductory Chapter: Growing W Single Crystals by EBFZM for Studying

Doping of SiC Crystals during Sublimation Growth and Diffusion

Numerical Analysis of Liquid Menisci in the EFG Technique *by Sergei N. Rossolenko, Gleb M. Katyba, Irina N. Dolganova, Irina A. Shikunova, Dmitry O. Stryukov, Kirill I. Zaitsev* 

## Contents


Preface

This book is intended to provide information on advances of new knowledge in the different technologies of growing single-crystalline materials to physicists, researchers, and engineers working in the field of crystal growing or applications.

In Chapter 2 the doping of SiC crystals during sublimation growth and diffusion is presented. The preparation of SiC crystals doped with various impurities introduced during the process of sublimation growth and diffusion is described. Crystals of n- and p-type conductivity with maximum content of electrically active impurities (of the order of 1021 cm−3) are obtained. The solubility values of more than 15 impurities are determined. Special tantalum containers with several temperature zones, allowing the introduction of any impurity into SiC, are developed. The dependence of impurities concentration on temperature, growth rate, and seed orientation are found. Diffusion of impurities of boron, aluminum, gallium, beryllium, lithium, nitrogen, and phosphorus in silicon carbide polytypes is studied. Diffusion coefficients of these impurities in a wide temperature range are determined. Fast-diffusing states are atoms located in interstices, as well as centers, including the impurity atom and point defect. The extremely low diffusion mobility

Chapter 3 is devoted to the analysis of the behavior of the profile curves of the melt menisci for sapphire crystal growth by the edge-defined film-fed growth (EFG) technique. The menisci of the shaped crystals with capillary channels, fibers, and tubes (including cases of outer and inner circular menisci) are considered. Also, we investigate the profile curves of menisci in the cases of both positive and negative angles between profile curve and the working edge of the die. The cases of outer and inner circular menisci of the tubular crystals and menisci at capillaries and fibers

Chapter 4 describes growth of single-crystalline LiNbO3 particles by the aerosolassisted chemical vapor deposition method. Adjusting nucleation conditions, the effective shape and size control in the preparation of single-crystal lithium niobate nanoparticles by the aerosol-assisted chemical vapor deposition method is demonstrated. The effect of the most relevant parameters leading to nanocrystals taking a specific shape or size once they are synthesized is analyzed. This allows us to demonstrate that it is possible to control the size and morphology of particles prepared by adjusting the nucleation conditions. The synthesized nanocrystals

of lattice point atoms in the SiC lattice is noted.

single crystals.

are considered.

Chapter 1 is an introductory chapter and is devoted to growing and testing W single crystals, which are oriented for single slip and have been tested in dynamical tensile tests at temperatures between 26 and 800 K. Critical shear stress τc at 800 K was not high (τ ≈ 13 MPa), which was consistent with both the high purity and structural quality of tested W specimens. The value of τ down to low T increased very quickly and parabolically. Qualitatively, these results agreed well with type A and type B tests of high-purity Mo single crystals. The measurements also confirmed the existence of three regimes for the dependence of flow stress on temperature for W
