**Meet the editor**

Prof Sanghyun Lee is an assistant professor and CET program coordinator at Indiana State University. Before joining Indiana State University, he had more than 10 years of cutting-edge industry research experience such as in advanced CMOS technology, nonvolatile memory, and photovoltaics. He received his PhD degree in electrical and computer engineering from North Carolina

State University. His research interests are emerging nonvolatile memory, post–silicon-era transistors, new types of solar cells, and energy harvesting devices.

Contents

**Preface VII**

Sanghyun Lee

Palmerola

Adrian Habanyama

Adrian Habanyama

Chapter 1 **Introductory Chapter: Advanced Material and Device**

Chapter 2 **Germanium: Current and Novel Recovery Processes 9**

Chapter 3 **Phosphorus and Gallium Diffusion in Ge Sublayer of**

**Ohmic Contact Fabrication: Part One 47**

**Ohmic Contact Fabrication: Part Two 69**

Aixa González Ruiz, Patricia Córdoba Sola and Natalia Moreno

**In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures 31** Kobeleva Svetlana Petrovna, Iliya Anfimov and Sergey Yurchuk

Chapter 4 **Interface Control Processes for Ni/Ge and Pd/Ge Schottky and**

Chapter 5 **Interface Control Processes for Ni/Ge and Pd/Ge Schottky and**

**Applications with Germanium 1**
