**Lead Zirconium Titanate Films and Devices Made by a Low-Temperature Solution-Based Process Lead Zirconium Titanate Films and Devices Made by a Low-Temperature Solution-Based Process**

DOI: 10.5772/intechopen.79378

Phan Trong Tue and Yuzuru Takamura Phan Trong Tue and Yuzuru Takamura

Additional information is available at the end of the chapter Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/intechopen.79378

### **Abstract**

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As the most important multifunctional oxide material, lead zirconium titanate (PZT) has a diverse range of applications such as piezo actuators, ferroelectric nonvolatile memories, sensors, and transducers due to its excellent structural and electrical properties. However, it generally requires a high annealing temperature (above 600°C) to attain the desired properties, which hinders the integration of PZT with silicon-based Complementary Metal Oxide Semiconductor (CMOS). Therefore, the fabrication of PZT films by a chemical solution deposition (CSD) at temperatures compatible with Si-CMOS technology or even with polymeric substrate for flexible electronics would be of high technological interest. So far, different strategies to decrease the crystallization temperature of CSD-derived PZT films have been studied. This chapter presents a critical review on the low-temperature solution-processed PZT films and devices, and addresses challenges for fundamental understanding and practical integration of multifunctional PZT in devices. In the first part, recent advances in fabrication of CSD-derived PZT films at a low temperature are thoroughly reviewed. The second part discusses various techniques for patterning PZT into micro-nano-sized patterns. Lastly, some potential applications of the low-temperature CSD-derived PZT films and devices are demonstrated.

**Keywords:** lead zirconium titanate (PZT), ferroelectric, ferroelectric nonvolatile memory, piezoelectric actuator, solution process, low-temperature deposition
