**5. Conclusions**

The radio frequency capacitively coupled plasma source is widely utilized in the semiconductor fabrications. However, the source has a serious problem, although it has some merits such as simple structure and maintenance free. In this chapter, some solutions are introduced by adding simple methods. The first method is the high secondary electron emission electrode. The second method is multi-hollow and ring-shaped electrodes. The third method is magnetized ring-shaped electrode. All methods attained high-density plasma production. Especially, the ring-shaped electrode with magnets performed high-density plasma with 1011 cm−3 under a low-gas pressure. These methods will be useful to advance capacitively coupled plasma for microelectronic technology.
