**Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Gate Stack Quality Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality**

Dian Lei and Xiao Gong

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### **Abstract**

0.83Sn0.17 is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the interfacial property between HfO2 and Ge0.83Sn0.17 oxides formation and the Sn atoms segregation. In addition, sulfur passivation reduces the interface trap density *Dit* at the HfO2 /Ge0.83Sn0.17 interface from the valence band edge to the midgap. After the implementation of sulfur passivation, Ge0.83Sn0.17 p-MOSFETs . 25% µ enhancement can be observed in Ge0.83Sn0.17 p-MOSFETs with sulfur passivation at a high inversion carrier density Ninv of 1 × 1013 cm−2.

**Keywords:** GeSn, p-MOSFETs, sulfur passivation, XPS, dangling bond
