4.2. I-V characteristics of CNTFET

The proposed CNTFET circuit model is implemented in PSpice. A CNTFET DC characteristic is analyzed and simulated to check the output characteristics. Modeling of CNTFET with the I-V characteristics analysis is obtained from the channel length of 14 nm and width of two times the length of the proposed CNTFET. The I-V characteristic curves validate the proposed circuit model by getting drain current of 6.9 <sup>10</sup><sup>5</sup> A at the applied gate voltage of 0.4 V as shown in Figure 9.

4.3. Frequency response of CNTFET

in mS.

The current gain of the proposed CNTFET is shown in Figure 10. Current gain magnitude is found in 45 dB while the frequency is operated in 10 THz. The value of the CNTFET's

Figure 8. Simulation of frequency, fT, versus transconductance, gm: (a) transconductance in μS and (b) transconductance

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Figure 8. Simulation of frequency, fT, versus transconductance, gm: (a) transconductance in μS and (b) transconductance in mS.

#### 4.3. Frequency response of CNTFET

4. Analysis of CNTFET model

Figure 7. Intrinsic circuit model for CNTFET.

10 Design, Simulation and Construction of Field Effect Transistors

4.1. Transconductance of CNTFET SPICE model

plot for the value of transconductance in mS.

4.2. I-V characteristics of CNTFET

shown in Figure 9.

Therefore, we consider transconductance in mS in this research.

Figure 8(a) and (b) shows the simulation results of frequency versus transconductance while the transconductance is increased linearly. This is as a result with μS through the stage of the lower frequency as well as mS through the stage of increasing frequency. Therefore, highfrequency small signal model of CNTFET is obtained in 10 THz with 1.8 mS. On analyzing

Figure 8(a) shows the plot for the value of transconductance in μS and Figure 8(b) shows the

Tables 1 and 2 show the selected values of transconductance necessary for the small signal model obtained from the analysis of the model as shown in Figure 8(a) and (b). By comparing the two tables, transconductance in mS performs the higher frequency rather than to use in μS.

The proposed CNTFET circuit model is implemented in PSpice. A CNTFET DC characteristic is analyzed and simulated to check the output characteristics. Modeling of CNTFET with the I-V characteristics analysis is obtained from the channel length of 14 nm and width of two times the length of the proposed CNTFET. The I-V characteristic curves validate the proposed circuit model by getting drain current of 6.9 <sup>10</sup><sup>5</sup> A at the applied gate voltage of 0.4 V as

the data, we first calculate and simulate the transconductance value in μS and in mS.

The current gain of the proposed CNTFET is shown in Figure 10. Current gain magnitude is found in 45 dB while the frequency is operated in 10 THz. The value of the CNTFET's


Table 1. Frequencies for different current gain of small signal model while transconductance in μS.


Table 2. Frequencies for different current gain of small signal model while transconductance in mS.

transconductance gm is set as 1.8 mS from the analysis as shown in Figure 10 at the gate

Device Parameters CNTFET [25] This Research

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Current gain (db) 20 45 gm (mS) 3.8 1.8 Cgs (F) 65f 14a Cgd (F) 52f 14a Cut-off-Freq (Hz) 30G 10T

To validate the output characteristics of the current development of proposed CNTFET, we compare the work with other researches. Table 3 shows the comparison of the performance of the proposed model. From this performance comparison, we would like to conclude that the

This chapter discussed the development of the CNTFET model using 14-nm technology. We delineated a short examination of the proposed plan of CNTFET little banner show. The arrangement contains a suitable blueprint of the little banner procedure and demonstrated the displays by re-enacting little banner parameters for CNTFET with respect to that of 45 dB.

proposed CNTFET model is capable of operating in high frequency.

Figure 10. Output current gain of the CNTFET at 10-THz frequency.

voltage of 0.4 V [24].

Table 3. Comparison of current research.

5. Conclusion

Figure 9. I-V transfer characteristics of CNTFET.

Figure 10. Output current gain of the CNTFET at 10-THz frequency.


Table 3. Comparison of current research.

transconductance gm is set as 1.8 mS from the analysis as shown in Figure 10 at the gate voltage of 0.4 V [24].

To validate the output characteristics of the current development of proposed CNTFET, we compare the work with other researches. Table 3 shows the comparison of the performance of the proposed model. From this performance comparison, we would like to conclude that the proposed CNTFET model is capable of operating in high frequency.
