**Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs**

Juan Antonio Delgado-Notario, Vito Clericò, Kristel Fobelets, Jesús Enrique Velázquez-Pérez and Yahya Moubarak Meziani

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### **Abstract**

tion by the strained-Si MODFETs was performed at two frequencies (0.15 and 0.3 THz). A technology computer-aided design (TCAD) analysis based on a two-dimensional hydrodynamic model (HDM) was used to investigate the transistor response to THz radiation excitation. TCAD simulation was validated through comparison with DC and low-frequency AC measurements. It was found that the photoresponse of the transistors can be improved by applying a constant drain-to-source bias. This enhancement was observed both theoretically and experimentally. The HDM model satisfactorily describes the experimental dependence of the photoresponse on the excitation frequency, the gate bias, and the drain-to-source current bias. The coupling of the incoming THz radiation to the MODFETs was studied at 0.15 and 0.3 THz. Finally, to demonstrate the suitability of

**Keywords:** strained silicon, MODFETs, THz, plasma waves, TCAD, imaging, detectors
