Acknowledgements

A plot of threshold voltage versus temperature is shown in Figure 11. The plot shows that for high-k gate dielectric TFET, the threshold voltage rises with an increase in temperature, whereas for low-k dielectric, the threshold voltage remains almost constant. The simulated values of threshold voltage have been derived using linear extrapolation method of determining threshold voltage. The method involves the construction of a tangent at the point on the

Figure 10. Algorithm for the extraction of threshold voltage in heterojunction and homojunction TFETs [17].

48 Design, Simulation and Construction of Field Effect Transistors

The authors would like to acknowledge Computational Laboratory, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, India, for supporting the work.
