**5. Conclusions**

The potential of submicron gate length strained-Si MODFETs as detectors of terahertz radiation was demonstrated. A broadband (non-resonant) THz detection was observed under excitation of the transistors by a continuous-wave source at 0.15 and 0.3 THz. TCAD results obtained using a HDM model were in good agreement with the experimental ones in terms of both the excitation frequency and the gate-to-source bias. When imposing a source-todrain current of 50 μA, both TCAD simulations and experiments show an increase of the photoresponse as compared to the photovoltaic mode. A theoretical study was performed to analyze the effect of gate's geometrical asymmetries on the THz detection. Coupling between THz radiation and strain-Si MODFETs channel was analyzed at 0.3 and 0.15 THz. It shows that the coupling is mainly performed by bonding wires at 0.15 THz. Finally, the strained-Si MODFET was used as a single pixel detector to obtain images of a concealed object at 0.3 THz.
