**Construction of FETs**

**Chapter 6**

**Provisional chapter**

**Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor**

**Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor** 

**Gate Stack Quality**

**Gate Stack Quality**

Dian Lei and Xiao Gong

**Abstract**

**1. Introduction**

MOSFETs (p-MOSFETs) [11–18].

Dian Lei and Xiao Gong

Additional information is available at the end of the chapter

the interface trap density *Dit* at the HfO<sup>2</sup>

sion carrier density Ninv of 1 × 10<sup>13</sup> cm−2.

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/intechopen.74532

**Field-Effect Transistors: Impact of Sulfur Passivation on**

The effect of sulfur passivation of the surface of Ge0.83Sn0.17 is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the interfacial property between HfO<sup>2</sup> and Ge0.83Sn0.17. Sulfur passivation is effective in reducing both the Ge oxides and Sn oxides formation and the Sn atoms segregation. In addition, sulfur passivation reduces

to the midgap. After the implementation of sulfur passivation, Ge0.83Sn0.17 p-MOSFETs show improved subthreshold swing S and effective hole mobility μeff. 25% μeff enhancement can be observed in Ge0.83Sn0.17 p-MOSFETs with sulfur passivation at a high inver-

Materials with high carrier mobilities such as germanium (Ge) could replace Silicon (Si) as the channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs) for future high performance logic applications [1–10]. Recently, germanium-tin (GeSn) was reported to have a higher hole mobility than Ge and is a promising channel material for p-channel

Theoretical calculation [11] shows that the light hole effective mass of GeSn decreases with increasing Sn composition. It is also demonstrated experimentally [19] that increasing Sn

**Keywords:** GeSn, p-MOSFETs, sulfur passivation, XPS, dangling bond

/Ge0.83Sn0.17 interface from the valence band edge

**Field-Effect Transistors: Impact of Sulfur Passivation on** 

© 2016 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

© 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

distribution, and reproduction in any medium, provided the original work is properly cited.

DOI: 10.5772/intechopen.74532
