Chapter 8 **Electrical Characterization of Thin-Film Transistors Based on Solution-Processed Metal Oxides 135**

João P. Braga, Guilherme R. De Lima, Giovani Gozzi and Lucas Fugikawa Santos

Preface

Field effect transistors (FETs) are the fundamental building blocks of microelectronics. In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations. Re‐ cent developments in the realm of microelectronics are elaborated with evidence. The FET models and various related issues are also carefully described. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. The design and simulation of transistors section is elaborated in Chapters 1 to 5. Chapter 1 describes the 14-nm technology node to model nanosized transistors. Chapter 2 gives a brief account of the existing works on FET-based biosensors, the principle of dielectric modula‐ tion in tunnel field effect transistors (TFETs), and TFET simulations using technology com‐ puter-aided design (TCAD). Also, a circular gate TFET is presented as a dielectricmodulated biosensor and its practical implications are explained. Chapter 3 presents TFET bandgap modulation, which is supported by simulation results. The different TFET electri‐ cal parameters are also propounded in Chapter 3 using TCAD simulations. Chapter 4 re‐ ports an experimental and theoretical study of Schottky-gated strained-Si modulationdoped field-effect transistors (MODFETs) with different sub-micron gate lengths of 100, 250, and 500 nm. This chapter also elaborates the performance of strained-Si MODFETs at room temperature detection of 0.15 and 0.3 THz via TCAD simulations . Chapter 5 demystifies the

The construction of transistors is explained in Chapters 6 to 8. Chapter 6 demonstrates the effect of sulfur passivation on the surface of Ge0.83Sn0.17 for p-channel metal-oxide-semicon‐ ductor field-effect transistors (p-MOSFETs). In addition, it also explains the growth condi‐ tions, characterization, and construction parameters of p-MOSFETs. Chapter 7 provides a short review of THz modulators and graphene FETs. The device structure, its construction, and the experimental observation of modulation characteristics of graphene FET-based THz modulators are also probed in detail for both rigid and flexible devices. Chapter 8 gives a brief introduction to TFTs based on transparent semiconducting metal oxides (SMOs) with special focus on solution-processed devices. It also explains the electrical properties of TFTs with the different active layer compositions such as intrinsic zinc oxide (ZnO), aluminum-

All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation, and construction of FETs. We are deeply grateful to all the authors for their great efforts and outstanding input in writing these chapters. We honestly hope that this book will be a guide to young researchers who are interested in researching FETs in the near

> **Dhanasekaran Vikraman and Hyun-Seok Kim** Division of Electronics and Electrical Engineering

> > Dongguk University-Seoul, South Korea

future. We believe that the book will be a great addition to semiconductor physics.

role of clamping force on insulated gated bipolar transistors.

doped ZnO, and indium-doped ZnO.
