**DESIGN, SIMULATION AND CONSTRUCTION OF FIELD EFFECT TRANSISTORS**

Edited by **Dhanasekaran Vikraman** and **Hyun-Seok Kim**

#### **Design, Simulation and Construction of Field Effect Transistors**

http://dx.doi.org/10.5772/intechopen.72086 Edited by Dhanasekaran Vikraman and Hyun-Seok Kim

#### **Contributors**

Dian Lei, Xiao Gong, Soheli Farhana, Erping Deng, Qiye Wen, Yu-Lian He, Zhi Chen, Qing-Hui Yang, Huai-Wu Zhang, Rupam Goswami, Brinda Bhowmick, Juan Antonio Delgado Notario, Vito Clerico, Kristel Fobelets, Enrique Velazquez, Yahya Moubarak Meziani, Lucas Fugikawa Santos, Giovani Gozzi, Guilherme De Lima, João Paulo Braga

#### **© The Editor(s) and the Author(s) 2018**

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#### **Notice**

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First published in London, United Kingdom, 2018 by IntechOpen eBook (PDF) Published by IntechOpen, 2019 IntechOpen is the global imprint of INTECHOPEN LIMITED, registered in England and Wales, registration number: 11086078, The Shard, 25th floor, 32 London Bridge Street London, SE19SG – United Kingdom Printed in Croatia

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Design, Simulation and Construction of Field Effect Transistors Edited by Dhanasekaran Vikraman and Hyun-Seok Kim

p. cm. Print ISBN 978-1-78923-416-9 Online ISBN 978-1-78923-417-6 eBook (PDF) ISBN 978-1-83881-651-3
