5. Conclusion

Gm (μS) FT (Hz) 1.0800 <sup>10</sup><sup>11</sup> 1.2505 <sup>10</sup><sup>11</sup> 1.5915 <sup>10</sup><sup>11</sup> 1.8189 <sup>10</sup><sup>11</sup> 2.0463 <sup>10</sup><sup>11</sup> 2.5578 <sup>10</sup><sup>11</sup> 2.8421 <sup>10</sup><sup>11</sup> 3.1263 <sup>10</sup><sup>11</sup> 3.4105 <sup>10</sup><sup>11</sup>

12 Design, Simulation and Construction of Field Effect Transistors

Gm (mS) FT (Hz) 1.0 5.68 <sup>10</sup><sup>12</sup> 1.1 6.25 <sup>10</sup><sup>12</sup> 1.2 6.82 <sup>10</sup><sup>12</sup> 1.3 7.39 <sup>10</sup><sup>12</sup> 1.5 8.52 <sup>10</sup><sup>12</sup> 1.6 9.00 <sup>10</sup><sup>12</sup> 1.7 9.66 <sup>10</sup><sup>12</sup> 1.8 10.00 <sup>10</sup><sup>12</sup>

Figure 9. I-V transfer characteristics of CNTFET.

Table 1. Frequencies for different current gain of small signal model while transconductance in μS.

Table 2. Frequencies for different current gain of small signal model while transconductance in mS.

This chapter discussed the development of the CNTFET model using 14-nm technology. We delineated a short examination of the proposed plan of CNTFET little banner show. The arrangement contains a suitable blueprint of the little banner procedure and demonstrated the displays by re-enacting little banner parameters for CNTFET with respect to that of 45 dB. The inherent capacitance of 14 aF and transconductance of 1.8 mS are used as a piece of this examination. A benchmark is showed up for the immense execution of the exhibit made by differentiating and late research data. Particular characteristics are showed up by a course of action of multiplication. Besides, this system has familiar capacitance with survey, the charge defending capacitance at the repeat of 10 THz.

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