**From 11% Thin Film to 23% Heterojunction Technology (HJT) PV Cell: Research, Development and Implementation Related 1600 × 1000 mm<sup>2</sup> PV Modules in Industrial Production**

Eugenii Terukov, Andrey Kosarev, Alexey Abramov and Eugenia Malchukova

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#### **Abstract**

double and PCE = 13% for triple junction cells below predicted PCE ≈ 24%. PV cells on crystalline silicon (c-Si) provide PCE ≈ 17–19%. Cost of c-Si PV cells lowered continuously due to reducing price of silicon wafers and enlarging their size. Two factors stimulated a structure comprises c-Si wafer with additional junctions created by PECVD deposited layers allowing development of single wafer PV cells with PCE ≈ 24% and the size limited by wafer (15.6 x 15.6 cm2 ). The chapter starts with background in PECVD and c-Si PV cells. Then, in Section 2, we describe electronic properties of PECVD materials in HJT PV structures. Section 3 deals with structure and fabrication process for HJT devices. In Section 4, we present and discuss performance characteristics of the devices. Section 5 describes implementation of the developed HJT module (1600 x 1000 mm2 ) based on HJT single wafer cells in industry with presentation and discussion of characteristics related to industrial production. Finally, Section 6 presents the outlook and summary of the chapter.

**Keywords:** photovoltaic solar cells, HJT silicon solar cells, solar cell modules, plasma deposition

© 2016 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
