**3.3. Conclusions and outlook**

During the past decade, there has been significant active research regarding the development of high-performance semiconductors that can be generated by a low-cost, large-scale solution process. The recent progress with solution-processed, high-performance AOS confirms their potential feasibility in electronic applications. For practical realization of high-performance electronic devices even on plastic substrates, the high mobility at annealing temperature below 150°C


**Table 2.** Summary of low-temperature (<300°C) solution-processed oxide semiconductors.

is an inevitable requisite, which is considered achievable in solution processable AOS when the chemical/physical challenges addressed. The development of new chemical precursors for impurity-free AOS, the incorporation of dopants that can improve the electrical characteristics, and bias stability, and advanced annealing techniques for the generation of high-quality AOS would significantly improve the electrical performance of AOS processed by a solution process at a low temperature, thus making various practical electronic applications possible.
