*3.2.2.1. Microwave annealing (MW)*

The use of microwave-assisted annealing enabled quick fabrication of ZnO-TFT at 140°C with a *μ* of 1.7 cm<sup>2</sup> V−1 s−1, which is improved to three- to sixfolds in comparison with TFTs processed by conventional hot-plate annealing [56]. This enhanced TFT performance is attributed to the improved development of ZnO grains suitable for reducing the length of transport paths across grain boundaries and the shorter Zn-Zn distance enabling better overlap between the Zn s-orbitals, thus creating chemical structures appropriate for high-performance AOS.
