*3.2.2.3. High-pressure annealing (HPA)*

HPA influences thermodynamics of solution-processed AOS films, facilitating denser film formation by reducing its thickness under a high pressure (2 MPa). In addition, high-oxygen pressure changes the Gibbs free energy of the system and strengthens the bonding between metal ions and oxygen. As a result, TFT processed at 220°C exhibited a *μ* of 1.7 cm<sup>2</sup> V−1 s−1 and high-bias stability [62].

**Figure 5.** Schematic diagram for the condensation mechanism of metal-oxide precursors by DUV irradiation.
