1. Introduction

With advantageous material properties such as a wide bandgap and high thermal conductivity, silicon carbide (SiC) has attracted much attention for its wide applications in the photoelectric devices of high temperature and high power [1–5]. However, due to the wide bandgap, SiC-based photoelectric devices can be only driven by ultraviolet (UV) light, which essentially limits the application of visible and infrared light detection. Si/SiC heterostructure is suggested to make SiC-based devices to be light-activated by non-UV light, in which Si is used as a non-UV light absorption layer [6, 7]. In our previous work, it was found that the Si films on SiC substrates always have a polycrystalline structure with multiple orientations, while the preferential growth of the Si films with different orientations can be obtained at different growth

© 2016 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and eproduction in any medium, provided the original work is properly cited. © 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

temperature [8–12]. The interface-structure of the heterostructure determines some important parameters such as the preferential orientation [13, 14], the interface state density [15–17] and the carrier mobility, which have significant impact on the heterostructure device performance. By observation of the Si/SiC interface-structure with different growth temperatures, the growth mode of the Si/SiC heterostructure can be revealed, and the accurate control of the growth orientation may be achieved. At present, the studies of the SiC-based Si/SiC heterostructure just focused on the electrical performance of the heterostructures in SiC SBD [18] and SiC MOSFET [19, 20], the growth mode and interface-structure of the Si/SiC heterostructure is rarely reported.
