**Light Devices**

**Chapter 4**

Provisional chapter

**Growth Mode and Characterization of Si/SiC**

DOI: 10.5772/intechopen.74935

The Si/6H-SiC heterostructure of large lattice mismatch follows domain epitaxy mode, which release most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. An interfacial misfit dislocation array is present at the interface that determines the domain's size. In this chapter, transmission electron microscopy (TEM) and high resolution X-ray diffraction (HRXRD) were employed to reveal in-plane orientation, interface structure and growth mode of the Si/SiC heterostructure. Based on the characterizations, residual lattice mismatch and edge misfit dislocation density at the hetero-interface can be precisely controlled. And these characterization methods are applicable for the heterostructures of large-lattice mismatch, except for the heterostructures

Keywords: large lattice mismatch, domain matching mode, SiC-based heterostructure,

With advantageous material properties such as a wide bandgap and high thermal conductivity, silicon carbide (SiC) has attracted much attention for its wide applications in the photoelectric devices of high temperature and high power [1–5]. However, due to the wide bandgap, SiC-based photoelectric devices can be only driven by ultraviolet (UV) light, which essentially limits the application of visible and infrared light detection. Si/SiC heterostructure is suggested to make SiC-based devices to be light-activated by non-UV light, in which Si is used as a non-UV light absorption layer [6, 7]. In our previous work, it was found that the Si films on SiC substrates always have a polycrystalline structure with multiple orientations, while the preferential growth of the Si films with different orientations can be obtained at different growth

> © 2016 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and eproduction in any medium, provided the original work is properly cited.

© 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

distribution, and reproduction in any medium, provided the original work is properly cited.

Growth Mode and Characterization of Si/SiC

**Heterostructure of Large Lattice-Mismatch**

Heterostructure of Large Lattice-Mismatch

with different crystal symmetry on the film and the substrate.

in-plane orientation, Interface micro-structure

Additional information is available at the end of the chapter

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/intechopen.74935

Lianbi Li

Lianbi Li

Abstract

1. Introduction

#### **Chapter 4** Provisional chapter

#### **Growth Mode and Characterization of Si/SiC Heterostructure of Large Lattice-Mismatch** Growth Mode and Characterization of Si/SiC Heterostructure of Large Lattice-Mismatch

DOI: 10.5772/intechopen.74935

Lianbi Li Lianbi Li

Additional information is available at the end of the chapter Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/intechopen.74935

#### Abstract

The Si/6H-SiC heterostructure of large lattice mismatch follows domain epitaxy mode, which release most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. An interfacial misfit dislocation array is present at the interface that determines the domain's size. In this chapter, transmission electron microscopy (TEM) and high resolution X-ray diffraction (HRXRD) were employed to reveal in-plane orientation, interface structure and growth mode of the Si/SiC heterostructure. Based on the characterizations, residual lattice mismatch and edge misfit dislocation density at the hetero-interface can be precisely controlled. And these characterization methods are applicable for the heterostructures of large-lattice mismatch, except for the heterostructures with different crystal symmetry on the film and the substrate.

Keywords: large lattice mismatch, domain matching mode, SiC-based heterostructure, in-plane orientation, Interface micro-structure
