**5. Conclusions**

The properties of redox‐active molecules and the integration of molecular electronics in non‐ volatile memory technology have been systematically discussed. So far, redox‐active mol‐ ecules have already shown their potential and advantageous properties for future low‐power, high‐density, and high‐reliability nonvolatile memory. Solid‐state integration of the redox molecules in flash‐like nonvolatile memory devices enables the extension of the advantages afforded by the molecules to advanced electronic devices combined with universal semicon‐ ductor metrologies. Due to the intrinsic redox behavior of the molecules, large memory win‐ dow with sufficient charge‐trapping density can be achieved, and the >10<sup>9</sup> endurance cycles is about 10,000 times better than that of the conventional floating‐gate memory. Furthermore, discrete multibit charge storage can be enabled by mixing various redox molecules or using molecules with multiple redox states. The current main barriers are the CMOS compat‐ ibility and the process issues introduced with the molecular integration. The realization of future molecular memory applications still requires a combination of empirical fabrication and rational designs for particular molecular electronics devices toward sophisticated appli‐ cation. Upon this, the molecular electronics will no doubt be shedding more new lights on the micro‐/nanoelectronics society for creating next generation nonvolatile memory with enhanced performance.
