**Group III–V Semiconductor High Electron Mobility Transistor on Si Substrate**

Ravindiran Munusami and Shankar Prabhakar

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/intechopen.68181

#### **Abstract**

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88 Different Types of Field-Effect Transistors - Theory and Applications

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High electron mobility transistor (HEMT) is the futuristic development of the transis‐ tor in migration of the nm technology for integration of many devices in a single chip. Moving beyond the silicon‐based devices to reach out the bottlenecks in the scaling and sizing of transistors has become an interesting topic of research. This research area includes the novel approach towards new materials and device structures. Materials focus is on composites made of binary, ternary and quaternary elements. Nanostructures made of two‐dimensional electron gas (2DEG), quantum well and tunnel barrier make the electron transport in devices interesting. A similar approach is adopted in the present work to make the device more suitable for faster device operation with high frequency.

**Keywords:** high electron mobility transistor, two‐dimensional electron gas, heterojunction, ternary composite
