Vladimir Popov

[40] Gaubert P, Teramoto A, Sugawa S. Impact of doping concentration on 1/f noise performances of accumulation-mode Si(100) n-MOSFETs. Jpn J Appl Phys. 2016;55:04ED08-1~6.

[41] Gaubert P, Teramoto A, Sugawa S. Performances of accumulation-mode n- and p-MOSFETs

[42] Chindalore GL, McKeon JB, Mudanai S, Hareland SA, Shih WK, Wang C, Tasch AF, Maziar CM. An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers. IEEE Trans Electron Dev. 1998;45:502–511. [43] Mudanai S, Chindalore GL, Shih WK, Wang H, Ouyang Q, Tasch AF, Maziar CM, Banerjee SK. Models for electron and hole mobilities in MOS accumulation layers. IEEE

on Si(110) wafers. Jpn J Appl Phys. 2017;56:04CD15-17.

Trans Electron Dev. 1999;46:1749–1759.

26 Different Types of Field-Effect Transistors - Theory and Applications

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/intechopen.69069

#### Abstract

In this chapter, a new type of field-effect transistors is considered with a gate and a channel on a basis of two-dimensional systems of carriers. The key point of the device is that the systems are different. In particular, they are formed in different quantum wells or valleys of the carriers spectrum. Due to this difference, the coherent tunneling is reduced and inelastic tunneling requires additional excitations with significant momentum and energy. This decreases the tunneling rate significantly. For example, the intervalley tunneling rate is less than intravalley that in 9 orders of magnitude in GaAs/AlAs heterostructures. The two-dimensional character also can decrease the tunnel probability in a wide voltage range. Influence of further miniaturization will be discussed for the new types of the transistors.

Keywords: field-effect transistor (FET), two-dimensional system of carriers, resonant tunneling
