**6. Conclusion**

Superlattice structure for HEMT applications has shown good progress over the last few decades, to match the suitability of the device for high‐speed applications. This chapter has dealt with the improved performance of the HEMT device due to the DMS layer made with the InMnSb layer resulting in improved conductivity and VI characteristics. The resulted band structure with the proposed device structure has made the low‐dimensional structure with the 2DEG allowing the electron to travel without any collusion. The collision‐free trans‐ port of the particle in the device structure is predicted to make a better conductivity result‐ ing in better device performance. Comparison of the proposed HEMT device with the other existing devices has substantiated the improved device characteristics in par with the other HEMT devices. Hence it is evident that the proposed device will have a very good prospect in high‐speed applications.
