**Metal-Semiconductor Interfaces in Thin-Film Transistors**

Miguel Dominguez, Pedro Rosales, Alfonso Torres, Jose A. Luna-Lopez, Francisco Flores and Mario Moreno

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/intechopen.68327

#### **Abstract**

The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is no doped film to be used. In this chapter, some alternatives to improve this interface are analysed. Also, the influence of this interface on the electrical stability of these devices is presented.

**Keywords:** thin-film transistors, metal-semiconductor, contact resistance, short channel effects
