**5. Transfer characteristics**

Transfer characteristics with the drain current versus gate source voltage graph are shown in **Figure 7**. The results reveal that the proposed HEMT device has very high drain current of 22 A. The transfer characteristics of the HEMT device made of different materials and architec‐ tures are shown in **Figure 8**.

**Figure 7.** Transfer characteristics of the proposed device.

**Figure 8.** Transfer characteristics of other HEMT device in comparison with proposed HEMT device.
