**High Electron Mobility Transistors: Performance Analysis, Research Trend and Applications**

Muhammad Navid Anjum Aadit, Sharadindu Gopal Kirtania, Farhana Afrin, Md. Kawsar Alam and Quazi Deen Mohd Khosru

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/67796

#### **Abstract**

In recent years, high electron mobility transistors (HEMTs) have received extensive atten‐ tion for their superior electron transport ensuring high speed and high power applica‐ tions. HEMT devices are competing with and replacing traditional field‐effect transistors (FETs) with excellent performance at high frequency, improved power density and satis‐ factory efficiency. This chapter provides readers with an overview of the performance of some popular and mostly used HEMT devices. The chapter proceeds with different struc‐ tures of HEMT followed by working principle with graphical illustrations. Device perfor‐ mance is discussed based on existing literature including both analytical and numerical models. Furthermore, some notable latest research works on HEMT devices have been brought into attention followed by prediction of future trends. Comprehensive knowl‐ edge of up‐to‐date results, future directions, and their analysis methodology would be helpful in designing novel HEMT devices.

**Keywords:** 2DEG, heterojunction, high electron mobility, polarization, power amplifier, quantum confinement
