**9. Conclusion**

In this chapter, device characteristics and performance analysis of HEMTs have been dis‐ cussed based on the available literature. With a brief introduction of different structures and brief working principle, this chapter summarizes some prominent analytical and numeri‐ cal research works on HEMTs. *I‐V* characteristics, charge estimation, capacitance calculation, short channel effects, and thermal response of HEMTs have been discussed. Moreover, drift diffusion modeling, transport calculation, Monte Carlo simulation, Green's function formal‐ ism, and shear stress analysis have been discussed which rely on numerical approaches. HEMT‐based oscillators, amplifiers, Q‐spoilers, switches, and diodes are getting popularity in recent days. These have been overviewed based on latest reported researches. Based on these latest research studies, future research trends on HEMTs have been reviewed. Last but not the least, many important applications of HEMTs such as broadband and radar com‐ munications, space, and sensor constituents, DNA, protein, and pH detections have been listed to emphasize the immense prospects of HEMT devices. This chapter provides research‐ ers of relevant fields a direction for future improvement of HEMT devices with prospective applications.

### **Author details**

Muhammad Navid Anjum Aadit, Sharadindu Gopal Kirtania, Farhana Afrin, Md. Kawsar Alam\* and Quazi Deen Mohd Khosru

\*Address all correspondence to: kawsaralam@eee.buet.ac.bd

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
