**Graphene against Other Two‐Dimensional Materials: A Comparative Study on the Basis of Electronic Applications**

Rafael Vargas‐Bernal

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Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/63916

#### **Abstract**

The evolution of the electronics industry since almost 75 years ago has depended on the novel materials and devices that continuously are introduced. In first decades of this century, 2D materials are impelling this development through materials such as graphene, graphane, graphone, graphyne, graphdiyne, silicene, silicane, germanene, germanane, stanene, phosphorene, arsenene, antimonene, borophene, hexagonal boron nitride (*h*BN), transition metal dichalcogenides (TMDs), and MXenes. In this work, the main strategies to modify electrical properties of 2D materials are studied for obtain‐ ing dielectric, semiconducting, or semimetallic properties. The effects of doping, chemical modification, electrical field, or compressive and/or tensile strains are considered. In addition, the light‐matter interaction to develop optoelectronic applications is analyzed. In next three decades, a lot of scientific research will be realized to completely exploit the use of 2D materials either as single monolayers or as stacked multilayers in several fields of knowledge with a special emphasis on the benefit to the electronic industry and ultimately our society.

**Keywords:** Graphene, 2D materials, electronic devices, electrical properties, nanoelec‐ tronics, flexible electronics
