**Heteroepitaxial Growth of III–V Semiconductors on 2D Materials**

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42 Two-dimensional Materials - Synthesis, Characterization and Potential Applications

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Yazeed Alaskar, Shamsul Arafin, Isaac Martinez-Velis and Kang L. Wang

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/64419

#### **Abstract**

Quasi van der Waals epitaxy (QvdWE) of III-V semiconductors on two-dimensional layered material, such as graphene, is discussed. Layered materials are used as a lattice mismatch/thermal expansion coefficient mismatch-relieving layer to integrate III-V semiconductors on any arbitrary substrates. In this chapter, the epitaxial growth of both III–V nanowires and thin films on two-dimensional layered materials is presented. Also, the growth challenges of thin film on two-dimensional materials using QvdWE are discussed through density functional theory calculations. Furthermore, optoelectronic devices of III-V semiconductors integrated on two-dimensional layered material based on QvdWE are overviewed to prove the future potential and importance of such type of epitaxy.

**Keywords:** van der Waals, heteroepitaxy, graphene, III–V semiconductor, thin films, nanostructures
