**Application of pMOS Dosimeters in Radiotherapy**

Momčilo M. Pejović and Milić M. Pejović

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/67456

#### **Abstract**

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Pergamon.

230 Radiotherapy

The results of a study on pMOS dosimeters manufactured by Tyndall National Institute, Cork, Ireland and their sensitivity on radiation doses used in radiotherapy are presented. Firstly, we deal with analysis of defect precursors created by ionizing radiation, respon‐ sible for increase in fixed and switching traps, which are further responsible for threshold voltage shift as a dosimetric parameter. Secondly, influence of some parameters, such as gate bias during irradiation, gate oxide thickness and photons energies, on threshold voltage shift is presented. Fading of irradiated pMOS dosimeters and possible applica‐ tion of commercial MOSFETs in ionizing radiation dosimetry are also presented.

**Keywords:** fading, MOSFET, pMOS dosimeter, radiation dose, threshold voltage shift
