**7. Conclusion**

The sensitivity of pMOS dosimeters manufactured in Tyndall National Institute, Cork, Ireland, with 100 nm, 400 nm and 1 μm thick gate oxide to gamma and X‐ray irradiation, for radia‐ tion doses used in radiotherapy, has been investigated. It is shown that their sensitivity can be increased either by increase in gate bias during irradiation or by increasing the gate oxide thick‐ ness. The sensitivity increases with the decrease in ionizing radiation photon energy. Sensitivity of pMOS dosimeters with 1 μm thick gate oxide is satisfactory even for 1 cGy doses in low‐ field mode. Unfortunately, their major disadvantage is large fading immediately after irradia‐ tion. Investigations in a past few years have shown that some low‐cost commercial p‐channel MOSFETs could be good candidates for radiation dose measurements used in radiotherapy.
