**Author details**

transistors from integrating circuits CD4007 during irradiation without gate bias (*V*irr = 0 V) pre‐ sented the sensitivity 4.6 mV/Gy with a very good linear behavior of the threshold voltage shift compared to the radiation dose. Moreover, with the possibility of applying thermal compensa‐

**Figure 15.** Threshold voltage shift *Δ V*T in p‐channel MOSFETs 3N163 as a function of gamma‐ray radiation dose *D* in

D (Gy) 0 10 20 30 40 50 60

10 20 30

D (Gy)

**Figure 16.** Threshold voltage shift *Δ V*T in DMOS ZVP3306 as a function of 6 MeV electron beam radiation dose *D* in

tion, this transistor may be a promising candidate in radiotherapy.

the 0–58 Gy range. Gate bias during irradiation was *V*irr <sup>=</sup> <sup>0</sup> V.

120

V (V) T 2.0

246 Radiotherapy

1.5

1.0

0.5

0.0

100

80

60

V

(mV) T

40

20

the 0–25 Gy range.

Momčilo M. Pejović\* and Milić M. Pejović \*Address all correspondence to: momcilo.pejovic@elfak.ni.ac.rs Faculty of Electronic Engineering, University of Niš, Niš, Serbia
