**3.1. Gettering of hydrogen in poly‐Si TFTs**

To achieve effective passivation of electrically active defects in LT poly‐Si TFTs by H, it is necessary to evaluate the interaction between H and the defects such as grain boundaries, in‐ grain point defects, interface state at poly‐Si/SiO2, and defects in the dielectric film in a poly‐ Si TFT. The interaction of impurities with defects is widely known as "gettering" [38]. In this study, the evaluation of the hydrogenation of LT poly‐Si TFTs in terms of the gettering of H was conducted by H2 gas annealing [39].
