**Author details**

**Figure 14** shows the maximum intensity deviation percentages of each characteristic peak from different test positions for all oxidized samples as a function of the average thickness of the oxide layer. It is observed that the maximum intensity deviations for these characteristic peaks are in the range from about 5 % to a little lower than 25 %. This intensity variation comes from the difference in the thickness of the oxide layer. This result means that the uneven condition of the oxide layer thickness for the sample can be roughly reflected in intensity variation of the characteristic peaks. After analysis of these characteristic peaks, they can be confidently considered as sufficient scattering signals to detect the oxide layer thickness on Zr‐4 cladding and further employed to finish the task of converting the oxide layer thickness to detectable

**Figure 14.** The maximum intensity deviation percentages of the characteristic peaks (deconvoluted) as a function of the

Raman spectroscopy has been demonstrated to successfully probe the tensile biaxial strain in monolayer graphene on the surface of SiO2 nanopillars patterned by a self‐assembled block copolymer. The characteristic Raman peaks of the G band and 2D band shifted due to the strain, and the Raman shifts accurately expressed the strain value distributed on graphene. The surface profile of the transferred graphene film on SiO2 nanopillars was carefully investigated by AFM, and the biaxial tensile strain generated in the graphene was extracted from the physical deformation. Then, finite element simulations were used to validate the measure‐ ments. Both the AFM experimental investigation and FEM theory modeling matched the strain results achieved from Raman spectroscopy study and proved the capability of Raman

scattering to monitor the subtle mechanical property change of graphene.

optical signals.

136 Raman Spectroscopy and Applications

average thickness of the oxide layer. From Ref. [58].

**4. Conclusion**

Hongyi Mi1 , Zhenqiang Ma1\* and James P. Blanchard2

\*Address all correspondence to: mazq@engr.wisc.edu

1 Department of Electrical and Computer Engineering, University of Wisconsin‐Madison, Madison‐Wisconsin, United States of America

2 Department of Engineering Physics, University of Wisconsin‐Madison, Madison‐ Wisconsin, United States of America
