**High‐Efficiency Front Junction** *n***‐Type Crystalline Silicon Solar Cells High**‐**Efficiency Front Junction** *n*‐**Type Crystalline Silicon Solar Cells**

Yuguo Tao and Ajeet Rohatgi Yuguo Tao and Ajeet Rohatgi

Additional information is available at the end of the chapter Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/65023

#### **Abstract**

photovoltaic applications. Sol Energy Mater Sol Cells. 2015;134:407–416. DOI: 10.1016/

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j.solmat.2014.12.026

92 Nanostructured Solar Cells

j.apsusc.2016.04.023

This chapter aims to provide students/workers in the field of photovoltaics with the valuable information and knowledge needed to understand the physics and operation of high‐efficiency front junction *n*‐type crystalline silicon solar cells. The surface recombination and passivation mechanisms, and several promising passivation schemes for front and back cell surfaces, are addressed and reviewed. The advanced cell structures and their fabrication schemes to achieve higher efficiency are described and discussed, including selective emitter on the front and locally doped back surface filed or carrier selective rear contact composed of tunnel oxide and phosphorus‐doped polycrystalline silicon thin film. These advanced cell design features have become highly active areas of investigations in the photovoltaic industry for next‐generation production cells.

**Keywords:** front junction, recombination, surface passivation, selective emitter, tunnel oxide passivated contact, high efficiency
