**Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits**

Jean-Luc Autran, Daniela Munteanu, Soilihi Moindjie, Tarek Saad Saoud, Victor Malherbe, Gilles Gasiot, Sylvain Clerc and Philippe Roche

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/64277

#### **Abstract**

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A1996TV07200001

114 Modeling and Simulation in Engineering Sciences

10.1049/el:19950150

Press; 1999. 952 p. ISBN: 0521642221

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This chapter describes a new computational approach for accurately modeling radiation-induced single-event transient current and charge collection at circuit level. This approach, called random-walk drift-diffusion (RWDD), is a fast Monte Carlo particle method based on a random-walk process that takes into account both diffusion and drift of carriers in a non-constant electric field both in space and time. After introducing the physical insights of the RWDD model, the chapter details the practi‐ cal implementation of the method using an object-oriented programming language and its parallelization on graphical processing units. Besides, the capability of the ap‐ proach to treat multiple node charge collection is presented. The chapter also details the coupling of the model either with an internal routine or with SPICE for circuit solving. Finally, the proposed approach is illustrated at device and circuit level, considering four different test vehicles in 65 nm technologies: a stand-alone transistor, a CMOS inverter, a SRAM cell and a flip-flop circuit. RWDD results are compared with data obtained from a full three-dimensional (3D) numerical approach (TCAD simulations) at transistor level. The importance of the circuit feedback on the charge-collection process is also demonstrated for devices connected to other circuit nodes.

**Keywords:** single event effects, radiation transport modeling, random walk, drift-dif‐ fusion, radiation-induced charge generation and transport, Monte Carlo computation‐ al approach, numerical simulation, soft error, soft error rate, CMOS inverter, SRAM, flip-flop

© 2016 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
