**4.3 Effect of annealing on electrical properties**

In both types of annealing, the Qin is increased with temperature. The probable reasons for the rise in the Qin may be due to the generation of trap centres with annealing in the nitrogen ambient. In RTA, the Dit is found to be strongly dependent on the annealing temperature and it significantly reduced at 600ºC. With furnace annealing, the Dit decreases with increase in annealing temperature.
