*3.4.2. E-beam lithography advantages*


### *3.4.3. E-Beam Lithography Disadvantages*


**a.** Resist Preparation

**b.** Exposure

**c.** Development

film and remove any remaining solvent.

*3.4.2. E-beam lithography advantages*

**5.** Fast turn-around time

**3.** Machines are costly

**4.** Greater than 5 million dollars

**3.** Pattern is written directly to the wafer.

*3.4.3. E-Beam Lithography Disadvantages*

In this Process, the PMMA solution is spin coated onto the sample and baked to harden the

Sample is immersed in developer solution to selectively remove resist from the exposed area.

**Figure 8.** Schematic process of e-beam lithography. (a) Resist Preparation (b) Exposure (c) Development

**2.** Can write smaller features than X-ray lithography and photolithography

**4.** Used to develop specialized devices and prototype devices

**6.** This employs a beam of electron instead of photons

**1.** Not an efficient process for industrial processing

**5.** System is more complex than photolithography system

**2.** Takes multiple hours to pattern entire wafer

**1.** The resolution is not limited by diffraction; minimum feature is written on the nanoscale.

Selected areas of sample are exposed to a beam of high energy electrons

198 Advances in Micro/Nano Electromechanical Systems and Fabrication Technologies
