*3.4.1. E-beam applications*

This E-beam lithographic technique is mainly having following advantages in research field:


For nanolithography with ultra high resolution down to sub10nm feature sizes, complete dedicated e-beam writer systems or converted scanning electron microscopes (SEM) can be used. With the help of a design editor and a pattern generator, the electron beam is guided over the substrate surface, which is covered with electron beam sensitive resist such as PMMA, in order to generate a resist mask which then can be further used for nanopattern transfer. The steps of e-beam lithography is given in Fig. 8.

## **a.** Resist Preparation

In this Process, the PMMA solution is spin coated onto the sample and baked to harden the film and remove any remaining solvent.

### **b.** Exposure

Selected areas of sample are exposed to a beam of high energy electrons

**c.** Development

Sample is immersed in developer solution to selectively remove resist from the exposed area.

**Figure 8.** Schematic process of e-beam lithography. (a) Resist Preparation (b) Exposure (c) Development
