**2. Experimental techniques**

The HgTe/CdTe superlattice was grown by molecular beam epitaxy (MBE) on a [111] CdTe substrate at 180 °C. The sample (124 layers) had a period d=d1+d2 where d1(HgTe)=8.6 nm and d2(CdTe)= 3.2 nm. It was cut from the epitaxial wafer with a typical sizes of 5x1x1mm3 . The ohmic contacts were obtained by chemical deposition of gold from a solution of tetra‐ chloroauric acid in methanol after a proper masking to form the Hall crossbar. Carriers transport properties were studied in the temperature range 1.5-300K in magnetic field up to 17 Tesla. Conductivity, Hall Effect, Seebeck effect and angular dependence of the transverse magnetoresistance were measured. The measurements at weak magnetic fields (up to 1.2 T) were performed into standard cryostat equipment. The measurements of the magnetoresist‐ ance were done under a higher magnetic field (up to 8 T), the samples were immersed in a liquid helium bath, in the centre of a superconducting coil. Rotating samples with respect to the magnetic field direction allowed one to study the angular dependence of the magnetore‐ sistance.
