PHYSICS AND TECHNOLOGY OF SILICON CARBIDE DEVICES

#### **Physics and Technology of Silicon Carbide Devices**

http://dx.doi.org/10.5772/3428 Edited by Yasuto Hijikata

#### **Contributors**

Mariana Amorim Fraga, Rodrigo Savio Pessoa, Marcos Massi, Homero Santiago Maciel, Yintang Yang, Duan Baoxing, Hitoshi Habuka, Kair Nussupov, Malek Gassoumi, Hassen Maaref, Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, Sadafumi Yoshida, Moumita Mukherjee, Ciprian Iliescu, Daniel Poenar, Zhongchang Wang, Jung Ho Je, Mahboobeh Mahmoodi, Lida Ghazanfari, John Rozen, Heiji Watanabe, Sanjeev Kumar Gupta, Jitendra Singh, Jamil Akhtar, Takeshi Ohshima

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First published in Croatia, 2012 by INTECH d.o.o. eBook (PDF) Published by IN TECH d.o.o. Place and year of publication of eBook (PDF): Rijeka, 2019. IntechOpen is the global imprint of IN TECH d.o.o. Printed in Croatia

Legal deposit, Croatia: National and University Library in Zagreb

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Physics and Technology of Silicon Carbide Devices Edited by Yasuto Hijikata p. cm. ISBN 978-953-51-0917-4 eBook (PDF) ISBN 978-953-51-6283-4
