**Meet the editor**

Dr. Yasuto Hijikata is an associate professor of electrical and electronics systems engineering in Saitama University, Saitama, Japan, where he has taught for 13 years. He was born in Tokyo on April 1971 and received his doctor degree of engineering in light-wave sensing technology from Tokyo Institute of Technology in 1999. After that he arrived at Saitama University as an assistant

professor. He was previously in the national research institute (CNR) in Italy as a guest researcher from October 2005 to March 2006. He has been the current position since 2006.

Dr. Hijikata has been interest in characterizations of surfaces and interfaces of SiC semiconductor material for its device applications, especially on characterizations and processing of MOS interfaces as well as on the oxidation mechanism of SiC.

Contents

Preface IX

Section 1 Characterization for Device Application 1

Reflectance Spectroscopy 3

Synchrotron X-Ray Imaging 27

Chapter 3 Ion Synthesis of SiC and Its Instability at High

Temperatures 47

Section 2 Device Processing 97

Hitoshi Habuka

Chapter 5 #(9;><4;A?%585/;:->.501-

Ciprian Iliescu and Daniel P. Poenar

Chapter 6 Physics Behind the Ohmic Nature in Silicon Carbide

Applications 131

Contacts 149 Zhongchang Wang

Chapter 2 Characterization of Defects Evolution in Bulk SiC by

Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

Chapter 4 Etching of Silicon Carbide Using Chlorine Trifluoride Gas 99

Chapter 1 Nondestructive and Contactless Characterization Method for

Homo-Epitaxially Grown SiC Epilayers Using Infrared

Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

Spatial Mapping of the Thickness and Electrical Properties in

T. S. Argunova, M. Yu. Gutkin, J. H. Je, V. G. Kohn and E. N. Mokhov

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