Author details

Ciprian Iliescu4\* and Daniel P. Poenar2


2 Microelectronics Centre, School of Electrical & Electronics Engineering, Nanyang Technological University, Singapore

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Chapter 6

Physics Behind the Ohmic Nature in Silicon Carbide

\*!z+"z0\$!z)+/0z0%2!z"%!( /z%\*z/!)%+\* 10+.z.!/!.\$z%/z0\$!z !2!(+,)!\*0z+"z!(!0.+\*%z !¥ vices capable of function at high powder and high frequency levels, high temperatures, and 1/0%z%.1)/0\*!/^z\$%/z/1.#!z+"z 0%2%05z%/z/0.+\*#(5z .%2!\*z5z 0\$!z1.#!\*0z !/%.!z "+.z .!¥ ,(%\*#z0\$!z1..!\*0z%wz\* z/w/! z!(!0.+\*%/z!1/!z0\$!5z.!z1\*(!z0+z+,!.0!z,.+,¥ erly under harsh environmental conditions. As a promising substitute, the wide-band-gap semiconductor, silicon carbide (SiC), has captured considerable attention recently due to its !4!((!\*0z%\*0.%\*/%z,.+,!.0%!/\_z3\$%\$z%\*2+(2!z(.#!z.!' +3\*z!(!0.%z"%!( \_z\$%#\$z!(!0.+\*z/0¥ uration drift velocity, strong hardness, and good thermal conductivity. On the other hand, current significant improvements in the epitaxial and bulk crystal growth of SiC have paved the way for fabricating its electronic devices, which stimulates further interest in developing device processing techniques so as to take full advantage of its superior inherent properties.

One of the most critical issues currently limiting the device processing is the manufacturing of reliable and low-resistance Ohmic contacts especially contacts to *p*-type 4H-SiC [1]. The \$)%z+\*00/z.!z,.%).%(5z%),+.0\*0z%\*z%z !2%!/z!1/!zz\$+00'5z..%!.z+"z\$%#\$z!\*¥ ergy is inclined to form at an interface between metal and wide-band-gap semiconductor, which consequently results in low current driving, slow switching speed, and increased power dissipation. Much of effort expended to date to realize the Ohmic contact has mainly focused on two techniques. One is the high-dose ion implantation approach [2], which can increase carrier density in SiC noticeably while reducing its depletion width significantly so that increasing tunneling current is able to flow across the barrier region. The key problem +"z 0\$%/z)!0\$+ z%/z 0\$!z!/5z "+.)0%+\*z+"z(00%!z !"!0/z+.z)+.,\$%60%+\*z 1.%\*#z 0\$!z%+\*z%)¥ ,(\*00%+\*^z\$!/!z !"!0/z.!z1\*"+.01\*0!(5z2!.5z/0(!z\* z\*!! z0+z!z.!+2!.! z2%z\*\*!(¥

> © 2013 Wang; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

© 2013 Wang; licensee InTech. This is a paper distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

distribution, and reproduction in any medium, provided the original work is properly cited.

Contacts

Zhongchang Wang

1. Introduction

http://dx.doi.org/10.5772/50767

Additional information is available at the end of the chapter

#,)r *mech. Microeng.*, 14(11), 1478-1483.
