Notes

In this chapter, the significant results, which are obtained recently, are reviewed for the 4H- %z
/zc
!0(z!)%+\* 10+.z%!( z""!0z.\*/%/0+.d^z%./0\_z0\$!z/%z+,!.0%+\*z,.%\*¥ ciple for the 4H-SiC power MESFETs is briefly reported. Then, several new 4H-SiC power MESFETs structures are discussed, focusing on the surface electric field, breakdown voltage and frequency characteristics. Finally, the models with the electric field-dependent mobility are also reported for the conventional and buffer gate SiC MESFETs.
