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*κ* Gate Dielectrics: Current Status and

Chapter 11

uence power performance

Conductance Deep-Level Transient Spectroscopic Study

Silicon carbide (SiC) is an important material for fabricating high-power, high-temperature and high frequency devices [1]. The semi-insulating (SI) form of 4H-SiC is useful for making microwave devices [2fz!1/!z%0z\$!(,/z%\*z(+3!.%\*#z0\$!z/0.5z !2%!z,%0\*!/\_z0\$!.!5z%\*¥ creasing the maximum operating frequency of the device. Selective area ion implantation is regarded as an attractive doping method for fabricating MESFETs in bulk SI 4H-SiC [3–5]

\$!z/%(%+\*z.% !zc%dz
z!+)!/z2!.5z,.+)%/%\*#z\* % 0!z"+.z\$%#\$z,+3!.z)%.+¥

However, SiC MESFETs are not without trapping problems associated with both the surface

0\$.+1#\$z 0\$!z "+.)0%+\*z +"z -1/%/00%z \$.#!z %/0.%10%+\*/^z \$%/z ,./%0%z \$.#!z 0/z 0+z .!¥ strict the drain current and voltage excursions, thereby limiting the high-frequency power

Over the past few years, the vanadium-doped semi-insulating SiC substrate has attracted much attention in explaining the deterioration of the SiC MESFET microwave performance. Recently, the concern has shifted more towards surface traps due to the introduction of \$%#\$w,1.%05z /!)%w%\*/1(0%\*#z /1/0.0!/\_z3\$%\$z \$2!z !(%)%\*0! z 0\$!z(.#!.z ,.0z +"z 0\$!z ,.+¥ lems associated with the substrate [8,9f^z\$!z,.!/!\*!z+"z/1."!z/00!/z%\*z0\$!z1\*#0! z\$\*¥ nel regions between drain and source terminals has modulated the depletion of the channel 1\* !.z 0\$!z !2%!z/1."!\_z\* z\$/z.!/1(0! z%\*z 0\$!z ".!-1!\*5z %/,!./%+\*z+"z 0\$!z 0.\*/+\* 1¥ tance (gm) and gate lag transient [10, 12]. These anomalies make the device characteristics

> © 2013 Gassoumi and Maaref; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

© 2013 Gassoumi and Maaref; licensee InTech. This is a paper distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

distribution, and reproduction in any medium, provided the original work is properly cited.

due to the ease of inter-device isolation without the loss of planarity.

wave applications in commercial and military communications.

and with the layers underlying the active channel, which in-

much more complicated, and make some troubles in circuit design.

of 4H-SiC MESFET and Traps

Malek Gassoumi and Hassen Maaref

http://dx.doi.org/10.5772/51212

1. Introduction

output [6, 7].

Additional information is available at the end of the chapter
