1. Introduction

/z %/z '\*+3\*\_z /1\$z 2\*0#!/z +"z /%(%+\*z .% !z /z z \$%#\$z \$. \*!//z cG0\$z ,(!z "0!.z %¥ mond) [36, 37], high chemical and radiation resistance, high melting point, etc. became the basis of its wide application not only in microelectronics [1f\_z10z(/+z/z.!".0+.5z\* z.¥ sive materials. Silicon carbide is included in the oxidation resistant composite materials [42] used in coating system for "Space Shuttle", capable of withstanding temperatures up to DHCC[z0z0\$!z!\*0.\*!z+"z0\$!z/\$%,z%\*0+z0\$!z0)+/,\$!.!^z \*z)\*5z00!),0/z0+z !2!(+,z\*z!"¥ fective oxidation-protection coating for carbon-carbon composites with excellent mechanical properties at elevated temperature, silicon carbide coating has shown the best performance for short periods of up to 1900K [39f^z +.z(+\*#!.z,!.%+ /z \* z \$%#\$!.z 0!),!.01.!z ,,(%¥ tions, a challenging coating system should be developed.

Silicon carbide is regarded by researchers as a suitable material for the front wall structures of fusion reactors. The boers, cutting disks, grinding paper of SiC can be used for boring, drilling, surface grinding and cutting of steel, nonferrous metals, natural stone, concrete, wood and plastic.

\$!z/0%(%05z+"z/%(%+\*z.% !z0+z\$%#\$z0!),!.01.!z0.!0)!\*0z%/z+"z/,!%(z%\*0!.!/0^z/zz/,!¥ cial application, silicon carbide can be thermally oxidized in the form of SiO2\_z\* z0\$!z !2%¥ ces which can be easily fabricated on Si substrate (Power MOSFET, IGBT, MOS controlled thyristor, etc.) can also be fabricated on SiC substrate [23]. In paper [23] the parabolic growth of thickness of thermal oxide versus oxidation time was observed, and the slope of the plots increases with increasing temperature. The thickness values of oxide films were about 23-77 \*)zc%w"!\_z3!0z+4% 0%+\*d\_zDKwIFz\*)zc%w"!\_z .5z+4% 0%+\*d\_zEDCwKDCz\*)zcw"!\_z3!0z+4% ¥ 0%+\*dz\* zDEHwEICz\*)zcw"!\_z .5z+4% 0%+\*dz"+.z+4% 0%+\*z0%)!zIz\$z\* z !,!\* z+\*z0!),!.¥ ture value (1000, 1050, 1110 or 1150°C).

properly cited.

© 2013 Nussupov and Beisenkhanov; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is © 2013 Nussupov and Beisenkhanov; licensee InTech. This is a paper distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Doped with different impurities, silicon carbide is used in semiconductor technology [63, 12].

important characteristics as a change of an area under a curve of IR transmission spectrum band and a change of peak amplitude at 800 cm-1 versus the annealing temperature which contains very valuable information about the structure changes in an implanted layer. If the thickness of ion-synthesized film is comparable or smaller than the wavelength of incident !(!0.+)#\*!0%z. %0%+\*\_z1\* !.z!.0%\*z#!+)!0.%z+\* %0%+\*/z+"z0\$!z!4,!.%)!\*0\_z+\*!z\*z+¥ /!.2!z\*+0z+\*(5z0\$!z0.\*/2!./!z+,0%(z+/%((0%+\*/z+"z0+)/zcw,\$+\*+\*/d\_z/z3!((z/z(+\*#%01¥ dinal optical lattice oscillations (LO-phonons) [3]. The detection of LO-phonon peak of SiC \* z%0/z\$\*#!z"0!.z "%()z\*\*!(%\*#z#%2!z %0%+\*(z%\*"+.)0%+\*z+\*z 0\$!z.5/0((%60%+\*z,.+¥ esses. It is necessary to carry out the circumstantial investigations devoted to an analysis in detail of change in a wider temperature interval of an half width of IR transmission peak

Ion Synthesis of SiC and Its Instability at High Temperatures

http://dx.doi.org/10.5772/ 51389

49

 \*z 0\$!z)&+.%05z +"z \*(+#+1/z /01 %!/\_z 0\$!z,+/0w%),(\*00%+\*z%/+\$.+\*+1/z \*\*!(%\*#z +"z /)¥ ples was carried out at temperatures from 400 up to 1200°C [11, 14, 2, 27f^z+3!2!.\_z%\*z/!2¥ eral studies [28, 47] the temperature range was extended and, the ion implanted layers had !!\*z\*\*!(! z0z0!),!.01.!/zDFCCz\* zDGCH[^z!z!(%!2!z(/+\_z0\$0z0\$!z0!),!.01.!z%\*0!.¥ 2(zGCCwDECC[z%/z\*+0z/1""%%!\*0z"+.zz\*\*!(%\*#z+"z %/+. !.! z(5!.z\* z+),(!0%+\*z+"z.5/¥ tallization processes. A more detailed investigation of processes at temperatures ranged ".+)zECz1,z0+zDGCH[z,!.)%0/z0+z+/!.2!zz\*1)!.z%\*0!.!/0%\*#z!""!0/z0'%\*#z,(!z%\*z\*z%)¥

The authors of papers [11, 2, 5, 55fz !(.!z+10zz/%#\*%"%\*0z %""1/%+\*z+"z.+\*z\* \_z+\*¥ trariwise, that is negatived in works [13, 26, 27]. The authors of papers [8, 4, 47, 34] show that a layer has the electron conduction after annealing. The data of [28] give of evidence

In a number of studies [6, 2, 5] a synthesis of SiC on a (100) oriented silicon substrate is considered /z,.!"!.(!\_z10z0z0\$!z/)!z0%)!z%\*z,,!./zeDFfz0\$!z+.%!\*00%+\*zcDDDdz+"z/1/0.0!z%/z !¥ clared as a most suitable. [4] investigated the optical and photoelectric properties of the SiC-Si structure, formed by implantation into (100), (110) and (111) oriented n- and p-type silicon of 12C ions with energies of 40 and 70 keV, and doses of 4.3 × 1017 and 5 × 1017 cm-2. Analysis of the IR absorption spectra of silicon layers implanted by carbon ions with energy of 70 keV allowed finding a significant dependence of crystallinity of the SiC layer on the orientation of 0\$!z/1/0.0!z"0!.z\*\*!(%\*#z0z0!),!.01.!/z+"zJCCPLCC[^z(0\$+1#\$z0\$!z0!0.\$! .(z%Pw bonds more intense formed at an orientation of the substrate (100), annealing at 1100°C all evens out differences in the absorption spectra for all three substrate orientations (100), (110) \* zcDDDd^z\$!z,\$+0+2+(0#!z,\$+0+.!/,+\*/!z3/z+0%\*! z%\*z((z%),(\*0! z/0.101.!/^z \*2!/0%¥ gation of current-voltage characteristics showed improvement in the rectification effect of the /0.101.!z"0!.z\*\*!(%\*#^z\$!z,+//%%(%05z+"z.!0%\*#z+"zw%y%z\$!0!.+/0.101.!/z5z%+\*

%),(\*00%+\*z0!\$\*%-1!zc\* z#,z+"zE^FLz!z\* zD^DDz!\_z.!/,!0%2!(5dz3/z/\$+3\*^

.\*#%/z!0z(^zeDJ\_zDKfz"+.)! zw%z%\*z/%(%+\*z5z\$%#\$w0!),!.01.!z%),(\*00%+\*zcKHCxLHC[dz+" .+\*z%+\*/z3%0\$z!\*!.#%!/zECCz'!z\* z +/!/z.\*#! z3%0\$%\*zcC^EPDdQDC18 cm-2. Implantation was ..%! z+10z%\*0+z/%(%+\*z3"!./z+"z+.%!\*00%+\*zcDCCdz\* zcDDDd^z \*z+0\$z/!/\_zw%z3/z"+.)! 3%0\$z0\$!z/)!z+.%!\*00%+\*z/z0\$!z)0.%4^z 0z(/+z.!,+.0! z0\$0z%),(\*00%+\*z0zz(+3!.z0!),!.¥ 01.!zcHCC[d\_z10z0z\$%#\$!.z!\*!.#5zcFCCz'!dz(! /z0+z0\$!z"+.)0%+\*z+"z#++ z-1(%05zw%^

which characterizes the degree of structure order of an ion implanted layer.

planted layer.

about the p-type conduction.

%!( w!""!0z 0.\*/%/0+./\_z %+ !/z \* z +0\$!.z !(!0.+\*%z !2%!/z /! z +\*z %z \$2!z /!2!.(z ¥ 2\*0#!/z+),.! z0+z/%)%(.z/%(%+\*z !2%!/\_z"+.z!4),(!\_z0\$!z+,,+.01\*%05z0+z3+.'z0z0!)¥ peratures up to 600°C, high speed and high radiation resistance. A large number of polytypes of SiC makes it possible to create heteropolytype structures [31, 32, 33]. Currently, using the methods of vacuum sublimation [48], molecular beam epitaxy [15], the epitaxial and heteropolytype layers based on the cubic 3C-SiC and two hexagonal 6H-SiC, 4H-SiC on substrates of SiC, are grown. Heteroepitaxial layers of 3C-SiC on substrates of Si by chemical vapor deposition (CVD) [41fz.!z#.+3\*^z0z0\$!z0!),!.01.!/z!(+3zDECC[z0\$!.!z.!z+\* %¥ 0%+\*/z"+.z0\$!z#.+30\$z+"z+0\$z,+(5wz\* z\*\*+.5/0((%\*!z%z3%0\$z %""!.!\*0z !#.!!/z+"z.5/0(¥ linity and structure of the cubic polytype 3C-SiC. Such conditions were realized in the magnetron sputtering [25, 56], laser ablation [53] and plasma deposition [36f\_z ,(/)w!\*¥ hanced chemical vapor deposition [19, 43], molecular beam epitaxy [16]. At temperatures below 1500°C in the direct deposition of carbon and silicon ions with energy of ~100 eV, the growth of nanocrystalline films with a consistent set of the polytypes 3C, 21R, 27R, 51R, 6H is possible [49, 50, 51].

In recent years there has been an intensification of studies on the synthesis of SiC by highdose carbon ion implantation into Si [37, 35]. In addition, the synthesis of SiC by high dose implantation of carbon ions into silicon is also of fundamental scientific interest due to the wide practical application [9 - 11, 47f\_z"+.z!4),(!\_z0+z.!0!zz+0%\*#z\* z%\*/1(0%\*#z%z(5¥ ers in the manufacture of integrated circuits. High quality crystalline -SiC film on SiO2 can be obtained by multiple implantations of carbon ions into silicon and subsequent selective oxidation of the top layer of Si [52]. Intensively developing area is the formation by this technique in SiO2 of nanostructured systems with inclusions of nanocrystals and clusters of Si, SiC and C, providing at the expense of size effects luminescence throughout the visible spectrum [57]. The study of the stability of these films to high temperature treatment is also of special interest.

The ion synthesis of silicon carbide and studies of crystallization process attract attention of researchers [12, 35, 37, 63]. The implantation of single energy carbon ions with a Gaussian %/0.%10%+\*z+\*z0\$!z !,0\$z%\*z/%(%+\*z%/z+"z%\*0!.!/0z 1!z0+zz,.!/!\*!z+"z3% !z.\*#!z+"z\*\*+(5¥ ers with different concentrations of carbon and silicon atoms and, therefore, a presence of different clusters and nanocrystals of silicon, carbon and silicon carbide in the implanted (5!.z"0!.z%),(\*00%+\*z\* z\*\*!(%\*#^z\$!z,.+,!.0%!/z+"z0\$!/!z(5!./z\$2!z!!\*z%\*2!/0%#0¥ ed in detail. In previous investigations, the carbon ions with energy of 40 keV were used for considered purposes in a number of papers [8, 13, 20], and doses ranged 1016-1018 cm-2 were 1/! z%\*z()+/0z((z+"z%\*2!/0%#0%+\*/\_z3\$!\*z0\$!z%+\*z/5\*0\$!/%/z+"zz/%(%+\*z.% !z"%()z3/z.¥ ried out [2]. The IR absorption technique was widely applied for the investigation of these layers [26, 55]. It has been used, mainly, to confirm the formation of silicon carbide in the implanted layer and, to obtain the new information about the layer structure as well. In /+)!z,,!./\_z0\$!z !,!\* !\*!z+"z+0\$z/\$%"0z+"z0\$!z32!z(!\*#0\$z+"zz)%\*%)1)z+"z z0.\*/)%/¥ sion peak and the change of its half width versus the annealing temperature are used for interpretation of IR transmission spectra. In our opinion, it is necessary to investigate such important characteristics as a change of an area under a curve of IR transmission spectrum band and a change of peak amplitude at 800 cm-1 versus the annealing temperature which contains very valuable information about the structure changes in an implanted layer. If the thickness of ion-synthesized film is comparable or smaller than the wavelength of incident !(!0.+)#\*!0%z. %0%+\*\_z1\* !.z!.0%\*z#!+)!0.%z+\* %0%+\*/z+"z0\$!z!4,!.%)!\*0\_z+\*!z\*z+¥ /!.2!z\*+0z+\*(5z0\$!z0.\*/2!./!z+,0%(z+/%((0%+\*/z+"z0+)/zcw,\$+\*+\*/d\_z/z3!((z/z(+\*#%01¥ dinal optical lattice oscillations (LO-phonons) [3]. The detection of LO-phonon peak of SiC \* z%0/z\$\*#!z"0!.z "%()z\*\*!(%\*#z#%2!z %0%+\*(z%\*"+.)0%+\*z+\*z 0\$!z.5/0((%60%+\*z,.+¥ esses. It is necessary to carry out the circumstantial investigations devoted to an analysis in detail of change in a wider temperature interval of an half width of IR transmission peak which characterizes the degree of structure order of an ion implanted layer.

Doped with different impurities, silicon carbide is used in semiconductor technology [63, 12].

%!( w!""!0z 0.\*/%/0+./\_z %+ !/z \* z +0\$!.z !(!0.+\*%z !2%!/z /! z +\*z %z \$2!z /!2!.(z ¥ 2\*0#!/z+),.! z0+z/%)%(.z/%(%+\*z !2%!/\_z"+.z!4),(!\_z0\$!z+,,+.01\*%05z0+z3+.'z0z0!)¥ peratures up to 600°C, high speed and high radiation resistance. A large number of polytypes of SiC makes it possible to create heteropolytype structures [31, 32, 33]. Currently, using the methods of vacuum sublimation [48], molecular beam epitaxy [15], the epitaxial and heteropolytype layers based on the cubic 3C-SiC and two hexagonal 6H-SiC, 4H-SiC on substrates of SiC, are grown. Heteroepitaxial layers of 3C-SiC on substrates of Si by chemical vapor deposition (CVD) [41fz.!z#.+3\*^z0z0\$!z0!),!.01.!/z!(+3zDECC[z0\$!.!z.!z+\* %¥ 0%+\*/z"+.z0\$!z#.+30\$z+"z+0\$z,+(5wz\* z\*\*+.5/0((%\*!z%z3%0\$z %""!.!\*0z !#.!!/z+"z.5/0(¥ linity and structure of the cubic polytype 3C-SiC. Such conditions were realized in the magnetron sputtering [25, 56], laser ablation [53] and plasma deposition [36f\_z ,(/)w!\*¥ hanced chemical vapor deposition [19, 43], molecular beam epitaxy [16]. At temperatures below 1500°C in the direct deposition of carbon and silicon ions with energy of ~100 eV, the growth of nanocrystalline films with a consistent set of the polytypes 3C, 21R, 27R, 51R, 6H

In recent years there has been an intensification of studies on the synthesis of SiC by highdose carbon ion implantation into Si [37, 35]. In addition, the synthesis of SiC by high dose implantation of carbon ions into silicon is also of fundamental scientific interest due to the wide practical application [9 - 11, 47f\_z"+.z!4),(!\_z0+z.!0!zz+0%\*#z\* z%\*/1(0%\*#z%z(5¥ ers in the manufacture of integrated circuits. High quality crystalline -SiC film on SiO2 can be obtained by multiple implantations of carbon ions into silicon and subsequent selective oxidation of the top layer of Si [52]. Intensively developing area is the formation by this technique in SiO2 of nanostructured systems with inclusions of nanocrystals and clusters of Si, SiC and C, providing at the expense of size effects luminescence throughout the visible spectrum [57]. The study of the stability of these films to high temperature treatment is also

The ion synthesis of silicon carbide and studies of crystallization process attract attention of researchers [12, 35, 37, 63]. The implantation of single energy carbon ions with a Gaussian %/0.%10%+\*z+\*z0\$!z !,0\$z%\*z/%(%+\*z%/z+"z%\*0!.!/0z 1!z0+zz,.!/!\*!z+"z3% !z.\*#!z+"z\*\*+(5¥ ers with different concentrations of carbon and silicon atoms and, therefore, a presence of different clusters and nanocrystals of silicon, carbon and silicon carbide in the implanted (5!.z"0!.z%),(\*00%+\*z\* z\*\*!(%\*#^z\$!z,.+,!.0%!/z+"z0\$!/!z(5!./z\$2!z!!\*z%\*2!/0%#0¥ ed in detail. In previous investigations, the carbon ions with energy of 40 keV were used for considered purposes in a number of papers [8, 13, 20], and doses ranged 1016-1018 cm-2 were 1/! z%\*z()+/0z((z+"z%\*2!/0%#0%+\*/\_z3\$!\*z0\$!z%+\*z/5\*0\$!/%/z+"zz/%(%+\*z.% !z"%()z3/z.¥ ried out [2]. The IR absorption technique was widely applied for the investigation of these layers [26, 55]. It has been used, mainly, to confirm the formation of silicon carbide in the implanted layer and, to obtain the new information about the layer structure as well. In /+)!z,,!./\_z0\$!z !,!\* !\*!z+"z+0\$z/\$%"0z+"z0\$!z32!z(!\*#0\$z+"zz)%\*%)1)z+"z z0.\*/)%/¥ sion peak and the change of its half width versus the annealing temperature are used for interpretation of IR transmission spectra. In our opinion, it is necessary to investigate such

is possible [49, 50, 51].

48 Physics and Technology of Silicon Carbide Devices

of special interest.

 \*z 0\$!z)&+.%05z +"z \*(+#+1/z /01 %!/\_z 0\$!z,+/0w%),(\*00%+\*z%/+\$.+\*+1/z \*\*!(%\*#z +"z /)¥ ples was carried out at temperatures from 400 up to 1200°C [11, 14, 2, 27f^z+3!2!.\_z%\*z/!2¥ eral studies [28, 47] the temperature range was extended and, the ion implanted layers had !!\*z\*\*!(! z0z0!),!.01.!/zDFCCz\* zDGCH[^z!z!(%!2!z(/+\_z0\$0z0\$!z0!),!.01.!z%\*0!.¥ 2(zGCCwDECC[z%/z\*+0z/1""%%!\*0z"+.zz\*\*!(%\*#z+"z %/+. !.! z(5!.z\* z+),(!0%+\*z+"z.5/¥ tallization processes. A more detailed investigation of processes at temperatures ranged ".+)zECz1,z0+zDGCH[z,!.)%0/z0+z+/!.2!zz\*1)!.z%\*0!.!/0%\*#z!""!0/z0'%\*#z,(!z%\*z\*z%)¥ planted layer.

The authors of papers [11, 2, 5, 55fz !(.!z+10zz/%#\*%"%\*0z %""1/%+\*z+"z.+\*z\* \_z+\*¥ trariwise, that is negatived in works [13, 26, 27]. The authors of papers [8, 4, 47, 34] show that a layer has the electron conduction after annealing. The data of [28] give of evidence about the p-type conduction.

In a number of studies [6, 2, 5] a synthesis of SiC on a (100) oriented silicon substrate is considered /z,.!"!.(!\_z10z0z0\$!z/)!z0%)!z%\*z,,!./zeDFfz0\$!z+.%!\*00%+\*zcDDDdz+"z/1/0.0!z%/z !¥ clared as a most suitable. [4] investigated the optical and photoelectric properties of the SiC-Si structure, formed by implantation into (100), (110) and (111) oriented n- and p-type silicon of 12C ions with energies of 40 and 70 keV, and doses of 4.3 × 1017 and 5 × 1017 cm-2. Analysis of the IR absorption spectra of silicon layers implanted by carbon ions with energy of 70 keV allowed finding a significant dependence of crystallinity of the SiC layer on the orientation of 0\$!z/1/0.0!z"0!.z\*\*!(%\*#z0z0!),!.01.!/z+"zJCCPLCC[^z(0\$+1#\$z0\$!z0!0.\$! .(z%Pw bonds more intense formed at an orientation of the substrate (100), annealing at 1100°C all evens out differences in the absorption spectra for all three substrate orientations (100), (110) \* zcDDDd^z\$!z,\$+0+2+(0#!z,\$+0+.!/,+\*/!z3/z+0%\*! z%\*z((z%),(\*0! z/0.101.!/^z \*2!/0%¥ gation of current-voltage characteristics showed improvement in the rectification effect of the /0.101.!z"0!.z\*\*!(%\*#^z\$!z,+//%%(%05z+"z.!0%\*#z+"zw%y%z\$!0!.+/0.101.!/z5z%+\* %),(\*00%+\*z0!\$\*%-1!zc\* z#,z+"zE^FLz!z\* zD^DDz!\_z.!/,!0%2!(5dz3/z/\$+3\*^

.\*#%/z!0z(^zeDJ\_zDKfz"+.)! zw%z%\*z/%(%+\*z5z\$%#\$w0!),!.01.!z%),(\*00%+\*zcKHCxLHC[dz+" .+\*z%+\*/z3%0\$z!\*!.#%!/zECCz'!z\* z +/!/z.\*#! z3%0\$%\*zcC^EPDdQDC18 cm-2. Implantation was ..%! z+10z%\*0+z/%(%+\*z3"!./z+"z+.%!\*00%+\*zcDCCdz\* zcDDDd^z \*z+0\$z/!/\_zw%z3/z"+.)! 3%0\$z0\$!z/)!z+.%!\*00%+\*z/z0\$!z)0.%4^z 0z(/+z.!,+.0! z0\$0z%),(\*00%+\*z0zz(+3!.z0!),!.¥ 01.!zcHCC[d\_z10z0z\$%#\$!.z!\*!.#5zcFCCz'!dz(! /z0+z0\$!z"+.)0%+\*z+"z#++ z-1(%05zw%^

Aleksandrov et al. [6] carried out the synthesis of single-crystal SiC layer with one-step technique of high current ion implantation of carbon atoms into silicon substrates with orientations (001) \* zcDDDd^z%\*#(!z.5/0(z(5!.z+"z%\_z3\$%\$z+\*0%\*/zz/)((z\*1)!.z+"z03%\*/\_z3/z/5\*0\$!¥ sized by the implantation of carbon ions with dose of 6×1017 cm-2 into (001) oriented silicon wafer using a focused ion beam with current density of 300 A/cm2 . When the ion current density was 150 A/cm2 , a single crystal SiC layer with a high concentration of twins was formed at the interface with the substrate Si. On top of this layer is formed a layer of polycrystalline SiC. When the implantation of carbon ions was carried out into (111) oriented silicon, single .5/0(zw%z(5!.z%/z\*+0z"+.)! z!2!\*z3\$!\*z%),(\*0! z%\*0+z/1/0.0!z\$!0! z1,z0+zz0!),!.¥ ature of 850°C. Polycrystalline SiC layer at the surface and single-crystal SiC layer with a high density of twins near the interface with the crystal Si matrix, are formed.

DCz\$)z)\_z.!/,!0%2!(5^z"0!.z(!\*%\*#z\* z.!)+2%\*#z0\$!z\*0%2!z/1."!z+4% !z%\*zz\$!)%¥

A set of these silicon wafers were implanted by 12C+ ions with energy 40 keV and dose 3.56×1017 cm-2 0z.++)z0!),!.01.!^z+z+/!.2!z0\$!z(+\*#%01 %\*(z+,0%(z+/%((0%+\*/zcw,\$+¥ nons) of atoms in synthesized film, a rotating shaft was incorporated into work chamber of infrared spectrometer. A sample holder is attached on this shaft. This system permits to )'!z 0\$!z z 0.\*/)%//%+\*z)!/1.!)!\*0/z+"z\*z%+\*z%),(\*0! z(5!.z2!./1/z\*z\*#(!z+"z%\*%¥ dence of electromagnetic radiation on sample surface over the range 0-360° with step of 5°. However, in practice, at measuring of spectra we change the angle of incidence from 0 up to ±75°. It was observed no differences in transmission spectra measured from samples sloped 0+z0\$!z. %0%+\*z0zz.+00%+\*z+"z/\$"0z+0\$z(+'3%/!z\* z\*0%w(+'3%/!z".+)z0\$!z\*+.)(^z /+¥ \$.+\*+1/z\*\*!(%\*#z+"z%+\*z%),(\*0! z/),(!/z3/z..%! z+10z%\*z211)z+2!.z0\$!z0!),!.¥

!+\*+)%(z211)z"1.\*!z!/,!%((5z!(+.0! z\* z.!0! z"+.z0\$!/!z,1.,+/!/^z 0z3/z.¥ ried out in conditions of completely oil-free pumping-out at a residual pressure ~ 1.3×10-4 Pa.

+z+0%\*zz.!0\*#1(.z,.+"%(!z+"z 0\$!z %/0.%10%+\*z+"z.+\*z0+)/z%\*z 0\$!z/%(%+\*\_z%),(\*0¥ tion of carbon ions of different energies and doses into second set of single-crystal silicon wafers of n- and p-type of conductivity was carried out sequentially in the following order: 1) E = 40 keV, D = 2.80×1017 cm-2, 2) 20 keV and 0.96×1017 cm-2, 3) 10 keV and 0.495×1017 cm-2, 4) 5 keV and 0.165×1017 cm-2, 5) 3 keV and 0.115×1017 cm-2. The ratio of the concentrations of carbon and silicon atoms in the depth was about NC/NSi = 0.7. Post implantation annealing of the samples was performed in a vacuum in the temperature range 200-1200°C for 30 min with a step of 200°C. Then, the SiC films were subjected to prolonged isothermal annealing at the temperature of 1200°C for several hours in an atmosphere of inert gas (Ar) and, after specific time intervals infrared transmission spectra were recorded. The IR transmission spectra were recorded in differential regime on double-beam infrared spectrometer cGCCP5000 cm-1). The spectra both at perpendicular incidence of infrared rays on the sample /1."!z\* z0z\*z\*#(!z+"zJF[z3%0\$z.!/,!0z0+z0\$!z\*+.)(z0+z0\$!z/),(!z/1."!z3!.!z)!/¥ 1.! ^z\$!z+),+/%0%+\*z+"z0\$!z(5!./z3/z!4)%\*! z5z1#!.z!(!0.+\*z/,!0.+/+,5^z\$!z,¥ rameters were as follows: incident electron beam of diameter 1 µm, energy 10 keV, angle of incidence 45°, diameter of scanning region 300 µm, vacuum 1.33 ×10-8 Pa, angle of Ar+

incidence 45°. Parameters of films were investigated using the X-ray reflectometry at small glancing angles by recording the angular dependence of the reflection coefficient for two spectral X-ray lines CuK (0.154 nm) and CuK (0.139 nm) at the facility "ComplexXRay C6". Selection of spectral lines CuK and CuK ".+)z,+(5\$.+)0%z/,!0.1)z3/z..%! z+10z1/¥ ing thin semi-transparent and thick untransparent monochromators, respectively, made

SiC films on the silicon substrates (25°C) were also synthesized by ion-beam sputtering of a two-component target of graphite and silicon. The C films on the silicon substrate (75°C) by magnetron sputtering were synthesized. Parameters of SiC and C films on Si substrates

from the pyrolytic graphite with a mosaic angle of 0.5°.

were determined using the X-ray reflectometry.

The temperature was controlled by a help of tungsten-rhenium thermocouple.

C with steps of 50-200°C. The annealing was carried out in a low-inertia

Ion Synthesis of SiC and Its Instability at High Temperatures

http://dx.doi.org/10.5772/ 51389

51

beam

cal etch, the samples were mounted in the target chamber of the implanter.

ture range 200-14000

This chapter presents the study of silicon carbide and carbon layers on silicon synthesized by ion beam techniques. The investigations of silicon layers implanted by carbon ions with energy 40 keV and dose 3.56×1017 cm-2 after annealing over a wide temperature range from 20 up to 1400°C using the special IR analysis are described. The features of change of the SiC-peaks in the spectra of the infrared transmission due to the influence of the Gaussian ,.+"%(!z+"z0\$!z %/0.%10%+\*z+"z.+\*z%\*z/%(%+\*z.!z/\$+3\*^z4,!.%)!\*0/z0+z+/!.2!z0\$!z(+\*#%¥ tudinal optical oscillations (LO-phonons) associated with the silicon carbide were carried out. A type of a conduction of synthesized silicon carbide was studied. Definite information from a shape analysis of the IR transmission curve was obtained. A particular attention was attracted on some problems which were disputable in previous investigations. IR studies of \$%#\$w0!),!.01.!z%\*/0%(%05z+"z\$+)+#!\*!+1/z(5!./z+"z/%(%+\*z.% !z+\*zcDCCdz\* zcDDDdz+.%¥ ented silicon substrates synthesized by multiple implantation of carbon ions with energies E = 40, 20, 10, 5 and 3 keV, are described. By IR spectroscopy, Auger electron spectroscopy and X-ray reflectometry the composition and the processes of structural adjustment of the layer 1.%\*#z \*\*!(%\*#z .!z \*(56! ^z -5z%+\*w!)z /,100!.%\*#z \* z)#\*!0.+\*z /,100!.%\*#z 0!\$\*%¥ ques the SiC0.8 and C films on the silicon wafers were deposited. Characteristics of the films by X-ray reflectometry are analyzed.
