Contents



Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

#### Chapter 2 Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging 27 T. S. Argunova, M. Yu. Gutkin, J. H. Je, V. G. Kohn and E. N. Mokhov


#### Section 3 MOS Processing and Characterizations 179


Chapter 16 Radiation Response of Silicon Carbide Diodes and

Makino, Manabu Arai and Yasunori Tanaka

Takeshi Ohshima, Shinobu Onoda, Naoya Iwamoto, Takahiro

Contents VII

Transistors 379


### Chapter 16 Radiation Response of Silicon Carbide Diodes and Transistors 379

Section 3 MOS Processing and Characterizations 179

Yoshida

VI Contents

(SiC) Surface 207

and Beyond 251 John Rozen

Section 4 SiC Devices 279

Chapter 7 Thermal Oxidation Mechanism of Silicon Carbide 181

Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi and Sadafumi

Chapter 8 Materials and Processing for Gate Dielectrics on Silicon Carbide

Sanjeev Kumar Gupta, Jitendra Singh and Jamil Akhtar

Chapter 9 Fundamental Aspects of Silicon Carbide Oxidation 235

Chapter 10 Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing

Chapter 11 Conductance Deep-Level Transient Spectroscopic Study of 4H-

Yintang Yang, Baoxing Duan and Xianjun Zhang

Mariana Amorim Fraga, Rodrigo Sávio Pessoa, Marcos Massi and

Chapter 13 Applications of SiC-Based Thin Films in Electronic and

Chapter 14 High-Power Hexagonal SiC Device: A Large-Signal High-

Chapter 15 Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS 349 Mahboobeh Mahmoodi and Lida Ghazanfari

Heiji Watanabe and Takuji Hosoi

SiC MESFET and Traps 281 Malek Gassoumi and Hassen Maaref

Chapter 12 Silicon Carbide Power MESFET 291

MEMS Devices 313

Homero Santiago Maciel

Frequency Analysis 337 Moumita Mukherjee

Takeshi Ohshima, Shinobu Onoda, Naoya Iwamoto, Takahiro Makino, Manabu Arai and Yasunori Tanaka

Preface

bandgap semiconducting materials.

obscure corner of an improving site of some SiC device.

Hijikata, who always supports me through my life.

As is well known, silicon carbide (SiC) is an attractive material for power device applications owing to its physical properties. Also these properties enable us to realize electronic devices or MEMS that operate in extremely severe circumstances such as high temperature or high radiation field, so-called 'hard electronics' devices. Furthermore, SiC has an advantageous chemical nature for device applications that a SiO2 film can be grown on the surface by thermally oxidation like Si, which cannot be obtained with other wide

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxidesemiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs) have come onto the market. However, technological improvements for material characterizations and fundamental device processing are still needed for the stable supply (i.e. mass products) of these devices or their cost-down. This book abundantly describes the essences of SiC devices, by SiC devices, and for SiC devices. I hope that this book would be placed in an

I would like to thank all the authors who contributed to this article. Especially, I deeply acknowledge some of the authors who accepted my offer despite being very busy. Ms. Viktorija Zgela, Ms. Maja Bozicevic, and Ms. Danijela Duric, the publishing process managers, made much effort for this work. They contacted with all the authors, kept them confortable in the publishing process and sometimes encouraged them to compose their chapter. I would like to also acknowledge Dr. Sadafumi Yoshida, Ex-Professor of Saitama University, who gave me a lot of valuable advices. Finally, I thank my wife, Megumi

Yasuto Hijikata

Saitama University, Japan

Division of Mathematics, Electronics and Informatics,

Graduate School of Science and Engineering,
