Author details

Heiji Watanabe\* and Takuji Hosoi

\*Address all correspondence to: watanabe@mls.eng.osaka-u.ac.jp

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[13] Matocha, K, Dunne, G, Soloviev, S, & Beaupre, R. (2008). Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs. *IEEE Trans. Electron Devices*,

Fundamental Aspects of Silicon Carbide Oxidation

http://dx.doi.org/10.5772/51514

249

[14] +6+\*+\_z^\_z+/+%\_z^\_z#!%\_z^\_z%.%\*+\_z^\_z
%0\*%\_z^\_z'\*+\_z^\_z')1.\_z^\_z\$%¥ mura, T., & Watanabe, H. (2010). Direct observation of dielectric breakdown spot in thermal oxides on 4H-SiC(0001) using conductive atomic force microscopy. *Mater.*

[15] Degraeve, R., Groeseneken, G., Bellens, R., Ogier, J. L., Depas, M., Roussel, P. J., & Maes, H. E. (1998). New insights in the relation between electron trap generation and the statistical properties of oxide breakdown. *IEEE Trans. Electron Devices*, 45,

[16] Teraoka, Y., & Yoshigoe, A. (2001). Commissioning of surface chemistry end-station

[17] Watanabe, H., Hosoi, T., Kirini, T., Kagei, Y., Uenishi, Y., Chanthaphan, A., Yoshigoe, A., Teraoka, Y., & Shimura, T. (2011). Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2uGw%cCCCDdz%\*0!."!z\* z%0/z+..!(0%+\*z3%0\$z!(!¥

[18] Watanabe, H., Ohmi, H., Kakiuchi, H., Hosoi, T., Shimura, T., & Yasutake, K. (2011). 1."!z (!\*%\*#z \* z!0\$%\*#z +"z Gw%cCCCDdz1/%\*#z\$%#\$w !\*/%05z 0)+/,\$!.%z,.!/¥

[19] 0\*!\_z^\_z+/+%\_z^\_z%.%\*+\_z^\_z!\*%/\$%\_z^\_z\$\*0\$,\$\*\_z^\_z+/\$%#+!\_z^\_z!.¥ +'\_z^\_z
%0\*%\_z^\_z'\*+\_z^\_z')1.\_z^\_z\z\$%)1.\_z^zcECDEd^z5\*\$.+0.+\*z.¥ diation photoelectron spectroscopy study of thermally grown oxides on 4H-

[20] Dhar, S., Feldman, L. C., Wang, S., Isaacs-Smith, T., & Williams, J. R. (2005). Interface trap passivation for SiO2/(000-1) C-terminated 4H-SiC. *J. Appl. Phys.*, 98, 014902.

[22] Devynck, F., & Pasquarello, A. (2007). Semiconductor defects at the 4H-SiC(0001)/

[23] Miyazaki, S., Nishimura, H., Fukuda, M., Ley, L., & Ristein, R. (1997). Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces.

[24] Watanabe, H., Kirino, T., Kagei, Y., Harries, J., Yoshigoe, A., Teraoka, Y., Hosoi, T., & Shimura, T. (2011). Energy band structure of SiO2uGw%z%\*0!."!/z\* z%0/z)+ 1(¥ tion induced by intrinsic and extrinsic interface charge transfer. *Mater. Sci. Forum*,

[25] Noborio, M, Suda, J, Beljakowa, S, Krieger, M, & Kimoto, T. (2009). 4H-SiC MISFETs

with nitrogen-containing insulators. *Phys. Status Solidi A*, 206, 2374-2390.

SiC(0001) Si-face and (000-1) C-face substrates. *Mater. Sci. Forum*, 697-702.

[21] Sze, S.M. (1981). Physics of Semiconductor Devices. Wiley, New York.

in BL23SU of SPring-8. *Appl. Surf. Sci.*, 169-170, 738 -170.

sure hydrogen plasma. *J. Nanosci. Nanotechnol.*, 11, 2802-2808.

trical properties. *Appl. Phys. Lett.*, 99, 021907.

SiO2 interface. *Physica*, B 401-402, 556-559.

*Appl. Surf. Sci.*, 113-114, 585-589.

679-680, 386 -389.

55, 1830-1834.

904-911.

*Sci. Forum*, 645-648, 821-824.

## References

^\_z\z\*6!.+00%\_z
^z^zcDLKLd^z/!.20%+\*z+"z%\*0!."%(z0+)%z/0!,/z 1.¥ ing silicon oxidation. *Nature*, 340, 128-131.
z!!(5\_z^z^\_z(!w .\$%)%\_z^\_z\z.)+""\_z ^z^zcDLKKd^z
%.+/+,¥ ic structure of the SiO2/Si interface. *Phys. Rev. B*, 38, 6084-6096.
^\_z\z\$\_z^zcECCCd^z%#\$w.+\*z+\*!\*0.¥ tions at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy. *Appl. Phys. Lett.*, 77, 2186-2188.
^zcECCKd^z.\*/%0%+\*z(5¥ ers at the SiO2/SiC interface. *Appl. Phys. Lett.*, 93, 022108.

[13] Matocha, K, Dunne, G, Soloviev, S, & Beaupre, R. (2008). Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs. *IEEE Trans. Electron Devices*, 55, 1830-1834.

!,.0)!\*0z+"z
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[1] Agarwal, A., Ryu, S. H., Palmour, J., Choyke, W. J., Matsunami, H., & Pensl, G.

^\_z
z!!(5\_z^z^\_z(!w .\$%)%\_z^\_z\z.)+""\_z

[4] Ohishi, K., & Hattori, T. (1994). Periodic changes in SiO2/Si(111) interface structures

[5] Watanabe, H., Kato, K., Uda, T., Fujita, K., Ichikawa, M., Kawamura, T., & Terakura, K. (1998). Kinetics of initial layer-by-layer oxidation of Si(001) surfaces. *Phys. Rev.*

[6] \$\*#\_z^^\_z1\$"!.\_z^^\_z+.0!.\_z^
^\_z\z\$\_z^zcECCCd^z%#\$w.+\*z+\*!\*0.¥ tions at the silicon dioxide-silicon carbide interface identified by electron energy loss

[7] \$!(!2\_z^\_z!(%/\_z^\_z1/\$!.\_z^\_z%1\_z^\_z!2%\*\_z ^\_z\z/\_z
^zcECCKd^z.\*/%0%+\*z(5¥

[8] Biggerstaff, T. L., Reynolds Jr, C. L., Zheleva, T., Lelis, A., Habersat, D., Haney, S., Ryu, S. H., Agarwal, A., & Duscher, G. (2009). Relationship between 4H-SiC/SiO2

[9] Zhu, X., Lee, H. D., Feng, T., Ahyi, A. C., Mastrogiovanni, D., Wan, A., Garfunkel, E., Williams, J. R., Gustafsson, T., & Feldman, L. C. (2010). Structure and stoichiometry

[10] Agarwal, A. K., Seshadri, S., & Rowland, L. B. (1997). Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors. *IEEE Electron Device*

[11] Kimoto, T., Kanzaki, Y., Noborio, M., Kawano, H., & Matsunami, H. (2005). Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (1120)

liability of 4H-SiC(000-1) MOS gate oxide using N2O nitridation. *Mater. Sci. Forum*,

^\_z0'!5)\_z^\_z1'1 \_z^\_z\$%\*+\$!\_z^\_z\z.%\_z^zcECCLd^z!¥

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^z^zcDLKLd^z/!.20%+\*z+"z%\*0!."%(z0+)%z/0!,/z 1.¥

^z^zcDLKKd^z
%.+/+,¥

(2004). Silicon CarbideRecent Major Advances. Springer, Berlin.

ic structure of the SiO2/Si interface. *Phys. Rev. B*, 38, 6084-6096.

with progress of thermal oxidation. *Jpn. J. Appl. Phys.*, 33, L 675-L678.

ing silicon oxidation. *Nature*, 340, 128-131.

spectroscopy. *Appl. Phys. Lett.*, 77, 2186-2188.

ers at the SiO2/SiC interface. *Appl. Phys. Lett.*, 93, 022108.

transition layer thickness and mobility. *Appl. Phys. Lett.*, 95, 032108.

of (0001) 4H-SiC/oxide interface. *Appl. Phys. Lett.*, 97, 071908.

formed by N2O oxidation. *Jpn. J. Appl. Phys.*, 44, 1213-1218.

ty, Suita, Osaka 565-0871, Japan

248 Physics and Technology of Silicon Carbide Devices

References

[2] %/+\*\_z

[3] %),/!(\_z^z

*Lett.*, 80, 345-348.

*Lett.*, 18, 592-594.

[12] 161'%\_z^\_z!\*6'%\_z

557-560.

%0\*%\_z^\_z'\*+\_z^\_z')1.\_z^\_z\$%¥ mura, T., & Watanabe, H. (2010). Direct observation of dielectric breakdown spot in thermal oxides on 4H-SiC(0001) using conductive atomic force microscopy. *Mater. Sci. Forum*, 645-648, 821-824.
%0\*%\_z^\_z'\*+\_z^\_z')1.\_z^\_z\z\$%)1.\_z^zcECDEd^z5\*\$.+0.+\*z.¥ diation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates. *Mater. Sci. Forum*, 697-702.

[26] Hosoi, T., Harada, M., Kagei, Y., Watanabe, Y., Shimura, T., Mitani, S., Nakano, Y., Nakamura, T., & Watanabe, H. (2009). AlON/SiO2 stacked gate dielectrics for 4H-SiC MIS devices. *Mater. Sci. Forum*, 615-617, 541 -544.

Chapter 10

**Provisional chapter**

Tailoring Oxide/Silicon Carbide Interfaces:

**Tailoring Oxide**/**Silicon Carbide Interfaces:**

We live in an energy-hungry world in which industrialization and globalization have accelerated the demand for resources that now doubles approximately every 40 years. Today, we consume about 18 TW (18×10<sup>12</sup> Watts) which is equivalent to 97 billion barrels of crude oil yearly. While renewable energy sources offer an environmentally conscious alternative to fossil fuels, they account for only about 10% of this total [64]. In parallel to the advent of clean energy, an effort has to be made to curb consumption, which can in part be achieved by improving system efficiency. In this Section, we will discuss in such terms why high-volume sectors such as transportation, electricity generation, and distribution, can benefit from

First, it should be recognized that the adoption of a new technology will be driven mainly by component cost and end-user benefits. Silicon carbide electronics is no exception and only makes sense if it can deliver on these fronts. A good example is the recent introduction of the pricier fluorescent light sources which make financial sense in the long term since they consume a fraction of the energy of incandescent bulbs and last some 20 times longer, proving that efficiency and reliability can justify the investment. So what are the key parameters that

*Cost* - Substrate size and availability have benefited from the boom in LED demand as III-nitride blue diodes can be fabricated on SiC. Indeed, the diameter of commercially available substrates has steadily increased from the release of two inch (50 mm) wafers in September 1997 to the recent unveiling of six inch (150 mm) wafers in August 2012 by Cree, inc., a very fast pace compared to Si evolution [100]. Also, tremendous quality improvements have been achieved together with increased process rate and uniformity. One of the many challenges facing SiC production has been the reduction of extended defects such as micropipes [29, 49]. Today, substrates are virtually free of such defects, optimizing device

> ©2012 Rozen, licensee InTech. This is an open access chapter distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. © 2013 Rozen; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

© 2013 Rozen, licensee InTech. This is a paper distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

distribution, and reproduction in any medium, provided the original work is properly cited.

NO Annealing and Beyond

**NO Annealing and Beyond**

Additional information is available at the end of the chapter

Additional information is available at the end of the chapter

John Rozen

10.5772/54396

**1. Introduction**

SiC-based electronics.

influence SiC device cost and efficiency?

John Rozen

http://dx.doi.org/10.5772/54396

%0\*%\_z^\_z'\*+\_z^\_z¥ kamura, T., & Watanabe, H. (2010). Improved characteristics of 4H-SiC MISFET with AlON/nitrided SiO2 stacked gate dielectrics . *Mater. Sci. Forum*, 645-648, 991 -994.
%0\*%\_z^\_z'\*+\_z^\_z')1.\_z^\_z\$%)1.\_z^\_z\z0\*!\_z^zcECDEd^z )¥ pact of interface defect passivation on conduction band offset at SiO2/4H-SiC interface . *Meter. Sci. Forum*, 712-720, 721-724.

**Provisional chapter**
