Author details

Mariana Amorim Fraga12\*, Rodrigo Sávio Pessoa33, Marcos Massi2 and Homero Santiago Maciel2,3

\* Address all correspondence to: matraga@ita.br

1 Department of Sciences, Engineering and Mathematical Modeling, Regional University of Northwest Rio Grande do Sul State,, Brazil

2 Plasma and Processes Laboratory, Technological Institute of Aeronautics,, Brazil

3 IP&D, University of Vale do Paraiba,, Brazil

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Chapter 14

High-Power Hexagonal SiC Device: A Large-Signal

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> © 2013 Mukherjee; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

© 2013 Mukherjee; licensee InTech. This is a paper distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

distribution, and reproduction in any medium, provided the original work is properly cited.

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High-Frequency Analysis

Additional information is available at the end of the chapter

Moumita Mukherjee

1. Introduction

http://dx.doi.org/10.5772/52982


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