Preface

**Section 3 Device Applications 193**

**VI** Contents

Lung-Chien Chen

Lee and Junsin Yi

**Section 4 Circuit Applications 313**

**Semiconductors 215**

**Wavelength Range 261** Yong-gang Zhang and Yi Gu

Castanho and Paulo R. Aguiar

**CMOS Technology 331**

Aryan Afzalian and Denis Flandre

Chapter 6 **Si-Based ZnO Ultraviolet Photodiodes 195**

Chapter 7 **Infrared Photodiodes on II-VI and III-V Narrow-Gap**

Chapter 8 **Al(Ga)InP-GaAs Photodiodes Tailored for Specific**

Volodymyr Tetyorkin, Andriy Sukach and Andriy Tkachuk

Chapter 9 **Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films 289**

Chapter 10 **Noise Performance of Time-Domain CMOS Image Sensors 315**

Chapter 11 **Design of Multi Gb/s Monolithically Integrated Photodiodes**

S. M. Iftiquar, Jeong Chul Lee, Jieun Lee, Juyeon Jang, Yeun-Jung

Fernando de S. Campos, José Alfredo C. Ulson, José Eduardo C.

**and Multi-Stage Transimpedance Amplifiers in Thin-Film SOI**

This book represents recent progress and development of the photodiodes including the fundamental reviews and the specific applications developed by the authors themselves. The key idea of this book is that it allows authors to deal with a wide range of backgrounds and recent research progresses in photodiode-related areas.

Most of the material in this book was developed for the researchers in the field of optical or optoelectronic devices and circuits. A substantial proportion of the material is original and has been prepared by the authors of each book chapter specifically for this book. With re‐ spect to the original collection of the book chapters, this book contains several improve‐ ments and several new problems and related solutions are also discussed in the area of fun‐ damental physics and characteristics, and the device and the circuit applications.

For editing this book, I have assumed that readers are well acquainted with the basic con‐ cepts of semiconductor physics fundamentals, especially with regard to: physical electron‐ ics; electronic materials; semiconductor processes; semiconductor device engineering; elec‐ tronic and optoelectronic circuits, etc.

The book is intended for at least three kinds of readers: a) graduate students of intermediate and advanced courses in microelectronics or optoelectronics, who are presumed to be most‐ ly interested in photodiode-related applications; b) engineers in the area of optoelectronic devices, who are especially interested in optical sources and optical detectors; c) professio‐ nal researchers of many areas of applications (not restricted to microelectronics or optoelec‐ tronics or photonics).

This book consists of 4 sections:

Section 1 contains the fundamental concepts of photon absorption in photodiodes. In addi‐ tion, the physical design scheme of the high-performance avalanche heterophotodiodes is presented to guide the engineers how to design avalanche heterophotodiodes to optimize their performances in specific applications.

Section 2 contains the fabrication of photodiode-based devices, such as solar cells, photodio‐ des, and focal plane arrays. Especially, the standards of optical radiation measurements us‐ ing photodiodes are also addressed.

Section 3 describes various types of photodiodes as device applications. It includes the ultraviolet (UV) photodiodes, the infra-red (IR) photodiodes, compound semiconductor photodi‐ odes for specific wavelength, and wide bandgap solar cells.

Section 4 presents the photodiode-related circuit applications. Here, the noise performance of CMOS image sensor is investigated in time-domain analysis and the high-speed Optoe‐ lectronic Integrated Circuit (OEIC) fabricated by monolithic integration of photodiode and amplifier is surveyed.

In presenting this book, I would like to express my thanks to the authors who participate in writing for each book chapter and followed my construct comments, constructive criticism, and useful suggestions. They include: Toshiaki Kagawa, Viacheslav Kholodnov, Mikhail Ni‐ kitin, Sergey Dvoretsky, S. M. Iftiquar, V.V. Vasiliev, Ana Luz Muñoz Zurita, Lung-Chien Chen, Volodymyr Tetyorkin, Yong-Gang Zhang, Fernando de S. Campos, Iftiquar Sk, Aryan Afzalian, and others.

I especially wish to express my sincere thanks to Ms. Romina Skomersic, Publishing Process Manager in InTech-Open Access Publisher, for the valuable publishing suggestions. More‐ over, I wish to thank the InTech-Open Access Publisher for helping in the typing adjustment and for revising the English text for each book chapter.

Finally, I would like to thank for my wife, Hyun Jung Cha, and my two adorable sons, Jiho and Joonho Yun, for their sincere care and support during the whole summer of 2012.

> **Ilgu Yun** School of Electrical and Electronic Engineering, Yonsei University

**Section 1**

**Fundamental Physics and Physical Design**

**Fundamental Physics and Physical Design**

Section 4 presents the photodiode-related circuit applications. Here, the noise performance of CMOS image sensor is investigated in time-domain analysis and the high-speed Optoe‐ lectronic Integrated Circuit (OEIC) fabricated by monolithic integration of photodiode and

In presenting this book, I would like to express my thanks to the authors who participate in writing for each book chapter and followed my construct comments, constructive criticism, and useful suggestions. They include: Toshiaki Kagawa, Viacheslav Kholodnov, Mikhail Ni‐ kitin, Sergey Dvoretsky, S. M. Iftiquar, V.V. Vasiliev, Ana Luz Muñoz Zurita, Lung-Chien Chen, Volodymyr Tetyorkin, Yong-Gang Zhang, Fernando de S. Campos, Iftiquar Sk, Aryan

I especially wish to express my sincere thanks to Ms. Romina Skomersic, Publishing Process Manager in InTech-Open Access Publisher, for the valuable publishing suggestions. More‐ over, I wish to thank the InTech-Open Access Publisher for helping in the typing adjustment

Finally, I would like to thank for my wife, Hyun Jung Cha, and my two adorable sons, Jiho

**Ilgu Yun**

Yonsei University

School of Electrical and Electronic Engineering,

and Joonho Yun, for their sincere care and support during the whole summer of 2012.

amplifier is surveyed.

VIII Preface

Afzalian, and others.

and for revising the English text for each book chapter.

**Chapter 1**

**Two-Photon Absorption in Photodiodes**

Incident light with a photon energy ℏ*ω* induces two-photon absorption (TPA) when *Eg* / 2ℏ*ωEg*, where *Eg*is the band gap of the photo-absorption layer of a photodiode (PD). Be‐ cause the absorption coefficient is small, photocurrent generated by TPA is too low to be used in conventional optical signal receivers. However, the nonlinear dependence of the photocurrent on the incident light intensity can be used for optical measurements and opti‐ cal signal processing. It has been used for autocorrelation in pulse shape measurements [1], dispersion measurements [2,3] and optical clock recovery [4]. These applications exploit the dependence of the generated photocurrent on the square of the instantaneous optical inten‐ sity. Measurement systems using TPA in a PD can detect rapidly varying optical phenom‐

This chapter reviews research on TPA and its applications at the optical fiber transmission‐ wavelength. Theory of TPA for semiconductors with diamond and zinc-blende crystal struc‐ tures is reviewed. In contrast to linear absorption for which the photon energy exceeds the band gap, the TPA coefficient depends on the incident lightpolarization. The polarization

The polarization dependences of TPA induced by a single optical beam in GaAs- and Si-PDs are compared to evaluate the effect of crystal symmetry. It is found that, in contrast to the GaAs-PD, TPA in the Si-PD is isotropic for linearly polarized light at a wavelength of 1.55 μm. Photocurrents for circularly and elliptically polarized light are also measured. Ratios of the nonlinear susceptibility tensor elements are deduced from these measurements. The dif‐ ferent isotropic properties of GaAs- and Si-PDs are discussed in terms of the crystal and

Cross-TPA between two optical beams is also studied. The absorption coefficient of cross-TPA strongly depends on the polarizations of the two optical beams. It is shown that the po‐

> © 2012 Kagawa; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

© 2012 Kagawa; licensee InTech. This is a paper distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

distribution, and reproduction in any medium, provided the original work is properly cited.

dependence is described by the nonlinear susceptibility tensor elements.

Additional information is available at the end of the chapter

Toshiaki Kagawa

**1. Introduction**

band structures.

http://dx.doi.org/10.5772/50491

ena without using high speed electronics.
