**Author details**

V. V. Vasiliev1 , V. S. Varavin1 , S. A. Dvoretsky1\*, I. M. Marchishin1 , N. N. Mikhailov1 , A. V. Predein1 , I. V. Sabinina1 , Yu. G. Sidorov1 , A. O. Suslyakov1 and A. L. Aseev1

[10] Pesek, A., Ryan, T. W., Sasshofer, R., Fantner, E. J., & Lischka, K. (1990). Investigation of the CdTe/GaAs interface by the x-ray rocking curve method. *Journal of Crystal*

LWIR Photodiodes and Focal Plane Arrays Based on Novel HgCdTe/CdZnTe/GaAs Heterostructures Grown by MBE

http://dx.doi.org/10.5772/50822

171

[11] Varavin, V. S., Dvoretsky, S. A., Liberman, V. I., Mikhailov, N. N., & Sidorov, Yu. G. (1995). The controlled growth of high-quality mercury cadmium telluride. *Thin Solid*

[12] Varavin, V. S., Dvoretsky, S. A., Liberman, V. I., Mikhailov, N. N., & Sidorov, Yu. G. (1996). Molecular beam epitaxy of high quality Hg1 − xCdxTe films with control of the

[13] Konstantinov, O. V., & Tsarenkov, G. V. (1976). Photoconductivity and Dember effect in graded semiconductorsпроводниках. Fizika i Tekhnika Poluprovodnikov (in Rus‐

[14] Rogalski, A., & Piotrowski, J. (1988). Intrinsic infrared detectors. *Progress in Quantum*

[16] Musca, C. A., Siliquini, J. F., Fynn, K. A., Nener, B. D., Faraone, L., & Irvine, S. J. C. (1996). MOCVD-grown wider-bandgap capping layers in HgCdTe long-wavelength infrared photoconductors. *Semiconductor Science and Technology*, 11(12), 1912-1917.

[18] Varavin, V. S., Vasiliev, V. V., Dvoretsky, S. A., Mikhailov, N. N., Ovsyuk, V. N., Si‐ dorov, Yu. G., Suslyakov, A. O., Yakushev, M. V., & Aseev, A. L. (2003). HgCdTe epi‐

[19] Varavin, V. S., Vasiliev, V. V., Zakhariash, T. I., et al. (1999). Photodiodes with low series resistance with graded band gap HgCdTe epitaxial films. *Journal of Optical*

[20] Vasiliev, V. V., Dvoretsky, S. A., Varavin, V. S., Mikhailov, N. N., Remesnik, V. G., Sidorov, Yu. G., Suslyakov, A. O., Yakushev, M. V., & Aseev, A. L. (2007). Matrix de‐ tector on the basis of p-P MCT HES grown by MBE. *Avtometriya*, 43(4), 17-24, (in Rus‐

[21] Wenus, J., Rutkowski, J., & Rogalski, A. (2001). Two-dimensional analysis of doublelayer heterojunction HgCdTe photodiodes. *IEEE Trans. Electron. Devices.*, 48(7),

[22] Dhar, V., & Gopal, V. (2001). Dependence of zero-bias resistance-area product and quantum efficiency on perimeter-to-area ratio in a variable-area diode array. *Semicon‐*

[23] Vasiliev, V. V., Dvoretsky, S. A., Varavin, V. S., Mikhailov, N. N., Sidorov, Y. G., Za‐ kharyash, T. I., Ovsyuk, V. N., Chekanova, G. V., Nikitin, M. S., Lartsev, I. Y., &

[15] Matare, H. F. (1971). *Defect Electronics in Semiconductors*, NY-London, Wiley.

[17] Rogalski, A. (2000). *Infrared Detectors*, Gordon and breach science publisher.

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*Technology*, 66, 69-72, (in Russian).

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1326-1332.

\*Address all correspondence to: dvor@isp.nsc.ru

1 A.V. Ryhanov Institute of Semiconductor Physics, Siberian branch of the Russian academy of sciences, Russia

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**Author details**

of sciences, Russia

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1 A.V. Ryhanov Institute of Semiconductor Physics, Siberian branch of the Russian academy

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**Chapter 5**

**Photodiodes as Optical Radiation Measurement**

Photodiodes for optical radiation measurements are used without reverse bias in most ap‐ plications since this operation yields the lowest dark current. To obtain photodiodes that op‐ erate at a low bias and have a low dark current, it is necessary to produce epitaxial layers that are pure and have few defects (such as dislocations, point defects, and impurity precipi‐ tates). Furthermore, a planar device structure requires that a guard ring be used to keep the electric field around the photoreceptive area from increasing too much. Fabrication and processing technologies such as impurity diffusion, ion implantation, and passivation play

From a radiometric point of view, the photodetectors important characteristics are: Speed of response (characterized by the bandwidth of the frequency response or the Full Width Half Maximum (FWHM) of the pulse response), responsivity (determined as the ratio of current out the detector to the incident optical power on the device), sensitivity (defined as the mini‐ mal input power that can still be detected which, as a first approximation, is defined as the optical power which generates an electrical signal equal to that due to noise of the diode) and response linearity. These quantities defined the basic radiometrical behavior of any de‐ tector. For those detectors having large area, as it may be the case for some photodiodes, knowing the response uniformity of the sensitive area is important too, especially when the incident beam diameter is much smaller than the detector sensitive surface. A high nonuni‐ formity would produce measurement errors when the detector is used at different positions,

errors that have to be taken into account for the final accuracy of the measurement.

© 2012 Luz Muñoz Zurita et al.; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

© 2012 Luz Muñoz Zurita et al.; licensee InTech. This is a paper distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,

distribution, and reproduction in any medium, provided the original work is properly cited.

Ana Luz Muñoz Zurita, Joaquín Campos Acosta, Alejandro Ferrero Turrión and Alicia Pons Aglio

important roles in the production of reliable photodetectors.

Additional information is available at the end of the chapter

**Standards**

http://dx.doi.org/10.5772/51462

**1. Introduction**

