**1. Introduction**

76 Solar Cells – Thin-Film Technologies

Wang L. and Tao M. (2007) Fabrication and Characterization of p-n Homojunctions in

*Letters*, 10 (9) H248-H250

Cuprous Oxide by Electrochemical Deposition, *Electrochemical and Solid-State* 

Solar cell attracts more and more attentions recently since it transfers and storages energy directly from the sun light without consuming natural resources on the earth and polluting environment. In 2002, the solar industry delivered more than 500 MW per year of photovoltaic generators. More than 85% of the current production involved crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock (Diehl et al., 2005; Lee et al., 2004). On the other hand the so-called second generation thin film solar cells based on a-Si, μc-Si, Cu(In,Ga)(Se,S)2, rare earth or CdTe have been explored(Shah et al.,2005; Li et al.,2004). Crystalline silicon on glass (CSG) solar cell technology was recently developed by depositing silicon film on a glass substrate with an interlayer. It can addresses the difficulty that silicon wafer-based technology has in reaching the very low costs required for large-scale photovoltaic applications as well as the perceived fundamental difficulties with other thin-film technologies (M. A. Green et al., 2004). This technology combines the advantages of standard silicon wafer-based technology, namely ruggedness, durability, good electronic properties and environmental soundness with the advantages of thin-films, specifically low material use, large monolithic construction and a desirable glass substrate configuration.

This Chapter will descript research about the polycrystalline silicon thin film absorber based on CSG technology with high efficiency. Line shaped electron beam recrystallized polycrystalline silicon films of a 20μm thickness deposited on the low cost borosilicate glasssubstrate, which are the base for a solar cell absorber with high efficiency and throughput. It is known that the morphology of polycrystalline silicon film and grain boundaries have strong impact on the photoelectric transformation efficiency in the later cell system. Thus, this study concentrates on the influence of recrystallization on the silicon-contact interface and the surface morphology.
