**3.5 XRD and Raman spectra of microcrystalline silicon thin-film fabricated from SiH2Cl2 and SiH4**

The XRD diffraction patterns and the Raman spectrum of the μc-Si:H:Cl film fabricated at Ts of 250°C and 400°C with increasing SiH2Cl2 flow rates are shown in Fig 23 and Fig. 24. The XRD and Raman study of μc-Si:H:Cl films fabricated at Ts of 400°C revealed that high film crystallinities with diffraction intensities ratio of I(220)/I(111) of 1.5-8.75 and with Raman crystallinity of Ic/Ia:5-6 were obtained.

As a consequence, highly crystallized μc-Si:H:Cl film with low defect densities of 3-4x1015 cm-3 was fabricated at fast deposition rate of 27Å/s. These findings suggest that the efficient abstraction of H- and Cl- terminated growing surface.

Fig. 23. XRD and Raman spectra of the μc-Si:H:Cl films fabricated at different flow rate of SiH2Cl2 at Ts of 250C.
