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**Chapter 3** 

© 2012 Hwang et al., licensee InTech. This is an open access chapter distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

and reproduction in any medium, provided the original work is properly cited.

© 2012 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution,

**Low Dielectric Materials for Microelectronics** 

He Seung Lee, Albert. S. Lee, Kyung-Youl Baek and Seung Sang Hwang

Over the past half century, low dielectric materials have been intensively researched by ceramic and polymer scientists. However, these materials possess a vast myriad of electrical, thermal, chemical, and mechanical properties that are just as crucial as the name that classifies them. Therefore, in many cases, the applications of low dielectric constant materials are dictated by these other properties, and the choice of low dielectric material

In the field of microelectronics, many of the early low dielectric materials have been satisfactory in covering the required properties. But as the microelectronics industry continuously boomed through the 21st century, more and more advanced processes and materials have been in demand. Since the invention of microprocessor, the number of active devices on a chip has been exponentially increasing, approximately doubling every year, famously forecast by Gordon Moore in 1965. All of this is driven by the need for optimal

Figure 1 shows the shrinking of the device dimensions over signal delay value. And while the total capacitance can be traded for resistance and vice versa by changing the geometry of the wire cross-section, the RC will always increase for future nodes. In other words, in order to enhance performance, decreasing the device size, as well as decreasing the interconnecting wire distance, gate and interconnect signals delay is the main challenge for ceramic and polymer scientists to overcome. In another approach to solve this RC delay problem, researchers have already changed the aluminum line to Cu line, which has lower resistance. But due to limitations in metal lines being applicable for use, research of low dielectric materials are continually being pursued today. The main challenge for researchers in the microelectronic industry is not to develop materials with the lowest dielectric constant, but to find materials that satisfy all of the electrical, thermal, chemical, and

may have a tremendous effect on a device's performance and lifetime.

mechanical properties required for optimal device performance.

Additional information is available at the end of the chapter

http://dx.doi.org/10.5772/51499

electrical and functional performance.

**1. Introduction** 

