**5. Conclusion**

The empirical model which allows a single layer of on-chip interconnects to be accurately replaced by homogeneous material slab in electromagnetic simulations containing integrated circuits was presented. The model is applicable to a wide range of interconnect dimensions (metal fill 20 - 60%, aspect ratio 1.4 – 3 and host permittivity 1 – 11.7) and is accurate to better than 2.5% (0.2%) error for reflection (transmission) when illuminated by plane waves with frequency 1 - 10 GHz, incident at up to 30 off the normal. The error does not increase with respect to the change in the grating profile and it can be applied to trapezoidal gratings with sidewall angles up to 5. Our approach allows the behaviour of on-chip interconnects to be accurately captured in full vector electromagnetic simulations without incurring the significant computational penalties associated with a finely detailed mesh. The experimental data supports the conception that the metal-dielectric grating structure specified for interconnects can be homogenised. The validation was carried out by comparing the numerical results with experimental data.

Empirical Mixing Model for the Electromagnetic Compatibility Analysis of On-Chip Interconnects 209

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