**7. References**


growth, Surfaces and Applications. [R. Triboulet, P.Siffert]. Netherlands: Elsevier, 2010. – P. 292-362.


[34] Nespurec, S. & Semejtec, P. (1972). Space Charge Limited Currents in Insulators With Gaussian Distribution of Traps, *Czechoslovak Journal of Physics*, Vol.B22, pp. 160–175, ISSN 0011-4626.

532 Advanced Aspects of Spectroscopy

– P. 292-362.

USSR.

Vol.81, pp. 527–530, ISSN.

1538–1544, ISSN 1943-2879

ISSN 0038-1101.

growth, Surfaces and Applications. [R. Triboulet, P.Siffert]. Netherlands: Elsevier, 2010.

[15] Stokman, F. (1973) On the Classification of Traps and Recombination Centres, *Physica* 

[16] Serdyuk, V., Chemeresyuk, G. & Terek, M. (1982). *Photoelectric Processes in* 

[17] Meyer, B. & Stadler, W. (1996). Native Defect Identification in II-VI Materials, *Journal of* 

[18] Neumark, G. (1997). Defects in Wide Band Gap II-VI Crystals, *Material Science and* 

[19] Grundmann, M. (2010). *The Physics of Semiconductors. An Introduction Including Nanophysics and Applications*, Springer-Verlag, ISBN, Berlin, Heidelberg, Germany. [20] Kosyak, V., Opanasyuk, A. & Panchal, J. (2011). Structural and Substructural Properties of the Zinc and Cadmium Chalcogenides (review), *Journal of Nano and Еlectronic Physics*,

[21] Pavlov, A. (1987). *Methods of Measuring the Semiconductor Materials Parameters (in* 

[22] Vorobjev, Ju., Dobropolskiy, V. & Strikha, V. (1988). *Methods of Semiconductors* 

[23] Gorokhovatskij, Ju. & Bordovskij, G. (1991). *Thermoactivation Current Spectroscopy of* 

[24] Lampert, M. & Mark, P. (1973). *Injection Currents in Solid States*, Mir, ISBN, Moskow,

[27] Ibrahim, A. (2006). DC Electrical Conduction of Zinc Telluride Thin Films, *Vacuum*,

[28] Rose, A. (1955). Recombination Processes in Insulators and Semiconductors, *Physical* 

[29] Rose A. (1955). Space–charge–limited Currents in Solids, *Physical Review*, Vol.97, pp.

[30] Nespurek, S. & Sworakowsky, J. (1980). Evolution of Validity of Analytical Equations Describing Steady–state Space–charge–limited Current–voltage–characteristics,

[32] Thomas, J., Williams, J. & Turton L. (1968). Lattice Imperfections in Organic Solids. Part 3, 4, *Transactions of the Faraday Society*, Vol.64, pp. 2496—2504, ISSN 0014-7672. [33] Hwang, W. & Kao, K. (1976). Studies of the Theory of Single and Double Injections in Solids with a Gaussian Trap Distribution, *Solid State Electronics*, Vol.19, pp. 1045–1047,

*Czechoslovak Journal of Physics*, Vol.B30, No.10, pp. 1148–1156, ISSN 0011-4626. [31] Mark, P. & Helfrich, W. (1962). Space–charge–limited Currents in Organic Crystals,

*Journal of Applied Physics*, Vol.33, pp. 205–215, ISSN 0021-8979.

[25] Као, К. (1984). *Electrons Transport in Solid States.* Vol.1, Mir, ISBN, Moskow, USSR. [26] Lalitha, S., Sathyamoorthy, R. & Senthilarasu, S. (2004). Characterization of CdTe Thin Film-dependence of Structural and Optical Properties on Temperature and Thickness,

*Solar Energy Materials & Solar Cells*, Vol.82, – pp. 187-199, ISSN 0927-0248.

*High-ohmic Semiconductors and Dielectrics*, Nauka, ISBN, Moskow, USSR.

*Semiconductors*, Vyshcha Shkola, Main Edition, ISBN, Odessa, USSR.

*Status Solidi A*, Vol.20. – pp. 217-220, ISSN 1862-6319.

*Crystal Growth*, Vol.161, pp. 119-127, ISSN 0022-0248.

Vol.3, No.1, – pp. 274-301, ISSN 2077-6772.

*Russian)*, Vysshaya Shkola, ISBN, Moskow, USSR.

*Investigation*, Vyshcha Shkola, ISBN, Kyiv, USSR.

*Review*, Vol.97, pp. 322—323, ISSN 1943-2879.

*Engineering A*, Vol.R21, No.1, - pp. 1-46, ISSN 0921-5093.


[66] Bhunia, S., Pal, D. & Bose, N. (1998). Photoluminescence and Photoconductivity in Hydrogen–passivated ZnTe, *Semiconductor Science and Technology*, Vol.13, pp. 1434-1438, ISSN 0268-1242.

534 Advanced Aspects of Spectroscopy

ISSN 1560-8034.

1829.

2313.

pp.140-143, ISSN 0235-2435.

pp., ISSN 0361-5235.

8950, ISSN 0163-1829.

329–339, ISSN 1521-4079.

Vol.74, No.4, pp. 552-554, ISSN 0003-6951.

6319.

[50] Kurbatov, D., Khlyap, H. & Opanasyuk, A. (2009). Substrate–temperature Effect on the Microstructural and Optical Properties of ZnS Films Obtained by Close–spaced Vacuum Sublimation, *Physica Status Solidi A*, Vol.206, No.7, pp. 1549-1557, ISSN 1862-

[51] (1988). *Selected Powder Diffraction Data for Education Straining (Search Manual and Data* 

[52] Zjuganov, A. & Svechnikov, S. (1981). *Injection-contact Effects in Semiconductors (in* 

[53] Zjuganov, A., Smertenko, P. & Shulga, E. (1979). Generalized Method of Determination the Volume and Contact Semiconductor Parameters by Current-voltage characteristic

[54] Kurbatov, D., Kolesnyk, M. & Opanasyuk, A. (2009). The Substructural and Optical Characteristics of ZnTe Thin Films, *Semiconductor Physics, Quantum Electronics &* 

[55] Kurbatov, D., Denisenko, V. & Opanasyuk, A. (2008). Investigations of Surface Morphology and Chemical Composition Ag/ZnS/Glassceramic Thin Films Structure, *Semiconductor Physics, Quantum Electronics & Optoelectronics*, Vol.11, No.4, pp. 252-256,

[56] Balogh, A., Duvanov, D. & Kurbatov, D. (2008). Rutherford Backscattering and X–ray Diffraction Analysis of Ag/ZnS/Glass Multilayer System, *Photoelectronics*, Vol.В.17,

[57] Wei, S. & Znang, S. (2002). Chemical Trends of Defect Formation and Doping Limit in II–VI Semiconductor: The Case of CdTe, *Physical Review B*, Vol.66, pp. 1-10, ISSN 0163-

[58] Wei, S. & Zhang, S. (2002). First-Principles Study of Doping Limits of CdTe, *Physica* 

[59] Soundararajan, R., lynn, K. & Awadallah, S. (2006). Study of Defect Levels in CdTe Using Thermoelectric Effect Spectroscopy, *Journal of Electronic Materials*, Vol.35, No.6,

[60] Berding, M. (1999). Native Defects in CdTe, *Physical Review B*, Vol.60, No.12, pp. 8943-

[61] Berding M. (1999). Annealing Conditions for Intrinsic CdTe, *Applied Physics Letters*,

[62] X.Mathew. Photo-induced current transient spectroscopic studu of the traps in *CdTe*//

[63] Mahalingam, T., John, V. & Ravi, G. (2002). Microstructural Characterization of Electrosynthesized ZnTe Thin films, *Crystal Research and Technology*, Vol.37, No.4, pp.

[64] Ibrahim, A, El-Sayed, N. & Kaid, M. (2004). Structural and Electrical Properties of

[65] Dean, P., Venghaus, H. & Pfister, J. (1978). The Nature of the Predominant Acceptors in High Quality Zinc Telluride, *Journal of Luminescence*, Vol.16, pp. 363-394, ISSN 0022-

Evaporated ZnTe Thin Films, *Vacuum*, Vol.75, pp. 189–194, ISSN 0042-207X.

(in Russian), *Poluprovodnikovaja Tekhnika i Elektronika*, Vol.29, pp.48-54, ISSN.

*Cards)*, International Centre for Diffraction Data, USA.

*Optoelectronics*, Vol.12, No.1, pp. 35-40, ISSN 1560-8034.

*Status Solidi B*, Vol.229, No. 1, pp. 305–310, ISSN 0370-1972.

*Solar Energy Materials & Solar Cells.* 76, pp. 225-242 (2003).

*Russian)*, Naukova Dumka, ISBN, Kiev, USSR.


[95] Aguilar-Hernandez, J., Cardenas-Garcia, M. & Contreras-Puente, G. (2003). Analysis of the 1,55 eV PL Band of CdTe Polycrystalline Films, *Material Science & Engineering A*, Vol.B102, pp. 203-206, ISSN 0921-5093.

536 Advanced Aspects of Spectroscopy

1165-1169, ISSN 2071-0186.

pp. 1612-1616, ISSN 0884-2914.

No.4, pp. 789-792, ISSN 1610-1642.

No.10, pp. 1175-1180, ISSN 0015-3222.

Vol.426, pp. 132-134, ISSN 0040-6090.

*Luminescence*, Vol.21, pp. 75-83, ISSN 1522-7243.

213, ISSN 0022-0248.

27-32, ISSN 0921-5093.

ISSN.0957-4522.

0268-1242.

4079.

ISSN 0015-3222.

[80] Makhniy V. & Gryvun, V. (2006). Diffusion ZnTe:Sn Layers with Electron Conductivity (in Russian), *Fizika I Tekhnika Poluprovodnikov*, Vol.40, No.7, pp. 794-795, ISSN 0015-3222. [81] Tsutsura, D., Korbutyak, O. & Pihur, O. (2007). On Interaction of Hydrogen Atoms With Complex Defects in CdTe and ZnTe, *Ukrainian Journal of Physics*, Vol.52, No.12, pp.

[82] Taguchi, T, Fujita, S. & Inushi, Y. (1978). Growth of High-purity ZnTe Single Crystals by the Sublimation Travelling Heater Method, *Journal of Crystal Growth*, Vol.45, pp. 204-

[83] Dean, P. (1979). Copper, the Dominant Acceptor in Refined, Undoped Zinc Telluride,

[84] Garcia, J., Remon, A. & Munoz, V. (2000). Annealing-induced Changes in the Electronic and Structural Properties of ZnTe Substrates, *Journal of Materials Research*, Vol.15, No.7,

[85] Uen, W., Chou, S. & Shin, H. (2004), Characterizations of ZnTe Bulks Grown by Temperature Gradient Solution Growth, *Materials Science & Engineering A*, Vol.B106, pp.

[86] Yoshino, K, Yoneta, V. & Onmori, K. (2004). Annealing Effects of High–quality ZnTe Substrate, *Journal of Electronic Materials*, Vol.33, No.6, pp. 579-582, ISSN 0361-5235. [87] Yoshino, K., Kakeno, T. & Yoneta, M. (2005). Annealing Effects of High–quality ZnTe Substrate, *Journal of Material Science: Materials in Electronics*, Vol.16, pp. 445-448,

[88] Ichiba, A., Ueno, J. & Ogura, K. (2006). Growth and Optical Property Characterizations of ZnTe:(Al, N) layers Using Two Co–doping Techniques, *Physica Status Solidi C*, Vol.3,

[89] Bose, D. & Bhunia, S. (2005). High Resistivity In–doped ZnTe: Electrical and Optical Properties, *Bulletin of Material Science*, Vol.28, No.7, pp. 647-650, ISSN 0250-4707. [90] Grill, R., Franc, J, & Turkevych, I. (2002). Defect-induced Optical Transitions in CdTe and Cd0,96Zn0,04Te *Semiconductor Science and Technology*, Vol.17, pp. 1282-1287, ISSN

[91] Ushakov, V. & Klevkov, Ju. (2007). Microphotoluminescence of Undoped Cadmium Telluride Obtained by Non-equilibrium Method of Direct Synthesis in Components Fluctuation (in Russian), *Fizika I Tekhnika Poluprovodnikov*, Vol.41, No.2, pp. 140-143,

[92] Babentsov, V., Corregidor, V. & Castano, J. (2001). Compensation of CdTe by Doping With Gallium, *Crystal Research and Technology*, Vol.36, No.6, pp. 535-542, ISSN 1521-

[93] Tarbayev, G. & Shepelskij. (2006). Two Series of "Dislocation" Photoluminescence Lines in Cadmium Telluride Crystals (in Russian), *Fizika I Tekhnika Poluprovodnikov*, Vol.40,

[94] Aguilar-Hernandez, J., Contreras-Puente, J. & Vidal-Larramendi J. (2003). Influence of the Growth Conditions on the Photoluminescence Spectrum of CdTe Polycrystalline Films Deposited by the Close Space Vapor Transport Technique, *Thin Solid Films*,


0146-3535.

Vol.6, No.3, pp. 461-471, ISSN 1729-4428.

Vol.12, No.4, pp. 797-806, ISSN 1616-3028.

S375-S381, ISSN 0957-4522.

[110] Grill, R. & Zappetini, A. (2004). Point Defects and Diffusion in Cadmium Telluride, *Progress in Crystal Growth and Characterization of Materials*, Vol.48, pp .209-244, ISSN

[111] Kosyak, V. & Opanasyuk, A. (2005). Point Defects Encemble in CdTe Single Crystals in the Case of full Equilibrium and Quenching (in Ukrainian), *Fizyka I Himiya Tverdych Til*,

[112] Kosyak, V., Opanasyuk, A. & Protsenko, I. (2005). Ensemble of Point Defects in Single Crystals and Films in the Case of Full Equilibrium and Quenching, *Functional Materials*,

[113] Kosyak, V. & Opanasyuk, A. (2007). Calculation of Fermi Level Location and Point Defect Ensemble in CdTe Single Crystal and Thin Films, *Semiconductor Physics, Quantum* 

[114] Kolesnik, M., Kosyak, V. & Оpanasyuk, A. (2007). Calculation of Point Defects Ensemble in CdTe Films Considering Transport Phenomenon in Gas Phase, *Radiation* 

[115] Kosyak, V., Kolesnik, M. & Opanasyuk, A. (2008). Point Defect Structure in CdTe and ZnTe Thin Films, *Journal of Material Science: Materials in Electronics*, Vol.19, No.1, pp.

[116] Kurbatov, D, Kosyak, V., Оpanasyuk, A. (2009). Native Point Defects in ZnS Films, *Physica. B. Condensed Materials*, Vol.404, No.23–24, pp. 5002-5005, ISSN 0921-4526.

*Electronics & Optoelectronics*, Vol.10, No.3, pp. 95-102, ISSN 1560-8034.

*Measurements*, Vol.42, No.4–5, pp. 855-858, ISSN 1350-4487.
