**Author details**

Denys Kurbatov and Anatoliy Opanasyuk *Sumy State University, Sumy, Ukraine* 

Halyna Khlyap *TU Kaiserslautern, Kaiserslautern, Germany* 

## **Acknowledgement**

530 Advanced Aspects of Spectroscopy

**6. Conclusions** 

**Author details** 

Halyna Khlyap

Denys Kurbatov and Anatoliy Opanasyuk *Sumy State University, Sumy, Ukraine* 

*TU Kaiserslautern, Kaiserslautern, Germany* 

additional studies

without model framework.

accurately by analysis of

technical conditions of layer condensation. This method concerns all defects, electrons and holes as components of thermodynamic equilibrium in the bulk crystal (complete equilibrium of the point defects). Then the modeling procedure reduces to solving set of equations which describe penetration of point defects into solid from the gas state along with the equation of electroneutrality and intrinsic conductivity equation [109-110]. The most complete spectrum of the native defects was taken into account under modeling the point defects ensemble. Calculations were carried out for the complete defects' equilibrium as well as for their quenching. Under modeling we have used energies of native defects formation obtained «*ab initio*» in [56-60]. Reference data of ionization energies of acceptor and donor centers of point defects in CdTe, ZnS, and ZnTe were used along with results of

1. Express-method of IS providing maximum information on deep centers in highresistive films based on analysis of SCLC CVC is developed and allows without


2. Using IS method the LS spectrum in the gap of polycrystalline (and monocrystalline) films of II-VI compounds is examined. These results are checked and made more

3. Using the methods mentioned above in the gap of polycrystalline material are revealed the LS with following energy positions: *Et1* = 0.05, *Et2* = (0.14÷0.15), *Et3* = (0.20÷0.21), *Et4* = (0.32÷0.34), *Et5* = (0.42÷0.43), *Et6* = (0.51÷0.52), *Et7* = (0.57÷0.58), *Et8* = (0.69÷0.70) eV (ZnTe); *Et1* = (0.13÷0.15), *Et2* = (0.39÷0.40), *Et3* = (0.45÷0.46), *Et4* = (0.51÷0.53), *Et5* = (0.56÷0.57), *Et6* = (0.60÷0.63), *Et7* = (0.68÷0.70) eV (CdTe); *Еt1* = 0.03, *Еt2* = (0.07÷0.08), *Еt3* = 0.15, *Еt4* = (0.23÷0.24), *Еt5* = 0.33, *Еt6* = 0.46, *Еt7* = 0.87, *Еt8* = 1.94, *Еt9* = 2.34, *Еt10* = 2.59, *Еt11* = 2.97, *Еt12* = 3.13 eV (ZnS) and concentration *Nt*=(1019–1021) m-3. Comparing reference data produced an identification of these levels as ones belonging to native point defects, uncontrolled impurities and their complexes. The wide range of LS revealed is due to high-sensitive methods used under investigations as well as because of examining traps in the intermediate layer of the films forming under condensation near the substrate.

 *- Т* – functions and low-temperature luminescence.

our experiments. Main data of modeling are presented in [111-116].


This work is supported by the Ukraine State Agency for the Science, Innovation and Informatization and by the NRF grant funded by the MEST of Korea within the project «Advanced materials for low-cost high-efficiency polycrystalline hetero junction thin films solar cells» and by the Ministry of Education and Science, Youth and Sport of Ukraine (Grant №. 01110U001151). The authors wish to thank Prof. Yu.P. Gnatenko and P.M. Bukivskij from the Institute of physics NAS of Ukraine for the PL measuring of some II-VI film samples.
