**7. References**


Al(1)-O(1)2 87.08(18); O(1)-Al(1)–O(1)3 154.8(2); O(1)-Al(1)-O(3) 102.58(17); O(1)1-Al(1)-O(1)2 154.8(2); O(1)1-Al(1)-O(1)3 87.08(18); O(1)1-Al(1)-O(3) 102.58(17); O(1)2-Al(1)-O(1)3 87.5(2); O(1)2-Al(1)-O(3) 102.58(17); O(1)3-Al(1)-O(3) 102.58(17); W(1)-O(1)-W(1)11 140.7(3); W(1)- O(1)-Al(1)11 140.7(3); W(1)11-O(1)-Al(1) 140.7(3); Al(1)-O(1)-Al(1)11 140.7(3); W(1)-O(2)-W(1)11 91.97(16); W(1)-O(2)-W(1)12 91.97(16); W(1)-O(2)-P(1) 123.9(3); W(1)-O(2)-O(2)7 131.4(3); W(1)-O(2)-O(2)4 69.1(3); W(1)-O(2)-O(2)10 131.4(3); W(1)11-O(2)-W(1)12 91.97(16); W(1)11-O(2)- P(1) 123.9(3); W(1)11-O(2)-O(2)7 69.1(3) W(1)11-O(2)-O(2)4 131.4(3); W(1)11-O(2)- O(2)10 131.4(3); W(1)12-O(2)-P(1) 123.9(3); W(1)12-O(2)-O(2)7 131.4(3); W(1)12-O(2)-O(2)4 131.4(3); W(1)12-O(2)-O(2)10 69.1(3); P(1)-O(2)-O(2)7 54.7(3); P(1)-O(2)-O(2)4 54.7(3); P(1)-O(2)-O(2)10 54.7(3); O(2)7-O(2)-O(2)4 90.0(3); O(2)7-O(2)-O(2)10 90.0(3); O(2)4-O(2)-O(2)10 90.0(3). Symmetry operators: (1) X,Z,Y (2) Z,Y,-X+1 (3) Z,-X+1,Y (4) Y,Z,-X+1 (5) Y,Z,X (6) Z,X,Y (7) X,Y,-Z+1 (8) Z,X,-Y+1 (9) -Z+1,X,-Y+1 (10) -Y+1,-Z+1,-X+1 (11) -Y+1,Z,-X+1 (12) -Z+1,-X+1,Y.

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Busbongthong, S. & Ozeki, T. (2009). Structural Relationships among Methyl-, Dimethyl-,

Contant, R. (1987). Relation between Tungstophosphates Related to the Phosphorus

Cotton, F. A. & Wilkinson, G. (1988). *Advanced Inorganic Chemistry, Fifth Edition*, John Wiley

Djurdjevic P.; Jelic, R. & Dzajevic, D. (2000). The Effect of Surface Active Substances on Hydrolysis of Aluminum(III) Ion. *Main Metal Chemistry*, Vol.23, No.8, pp. 409–421 Domaille, P. J. (1990). Vanadium(V) Substituted Dodecatungstophosphates. *Inorg. Synth.*,

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(2009). *Gaussian 09, Revision B.1*, Gaussian, Inc., Wallingford CT

Facile Preparation of Hybrid Film. *J. Mol. Struc.* Vol.979, pp. 221–226

Fukaya, K.; Srifa, A.; Ishikawa, E. & Naruke, H. (2010). Synthesis and Structural

Characterization of Polyoxometalates Incorporating with Anilinium Cations and

Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G. A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H. P.; Izmaylov, A. F.; Bloino, J.; Zheng, G.; Sonnenberg, J. L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, Jr., J. A.; Peralta, J. E.; Ogliaro, F.; Bearpark, M.; Heyd, J. J.; Brothers, E.; Kudin, K. N.; Staroverov, V. N.; Kobayashi, R.; Normand, J.; Raghavachari, K.; Rendell, A.; Burant, J. C.; Iyengar, S. S.; Tomasi, J.; Cossi, M.; Rega, N.; Millam, N. J.; Klene, M.; Knox, J. E.; Cross, J. B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R. E.; Yazyev, O.; Austin, A. J.; Cammi, R.; Pomelli, C.; Ochterski, J. W.; Martin, R. L.; Morokuma, K.; Zakrzewski, V. G.; Voth, G. A.; Salvador, P.; Dannenberg, J. J.; Dapprich, S.; Daniels, A. D.; Farkas, Ö.; Foresman, J. B.; Ortiz, J. V.; Cioslowski, J. & Fox, D. J.

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**24** 

*Ukraine* 

**The Diffusion Model of Grown-In Microdefects** 

Dislocation-free silicon single crystals are the basic material of microelectronics and nanoelectronics. Physical properties of semiconductor silicon are determined by the structural perfection of the crystals grown by the Czochralski and float-zone processes

Grown-in microdefects degrade the electronic properties of microdevices fabricated on silicon wafers. Optimizing the number and size of grown-in microdefects is crucial to improving processing yield of microelectronic devices. Many of the advances in integratedcircuit manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering (Yang et al., 2009). The problem of defect formation in dislocation-free silicon single crystals during their growth is a fundamental problem of physics and chemistry of silicon. In particular it is the key to solving the problem engineering applications of silicon crystals. This is connected with the transformation grown-in microdefects during the technological treatment of silicon

Formation of grown-in microdefects occurs as a result of the interaction of point defects during crystal cooling. The distribution of grown-in microdefects in a growing crystal is influenced by its temperature field and the boundary conditions defined by its surfaces. Until recently it was assumed that the formation of grown-in microdefects is due to condensation of intrinsic point defects (Voronkov et. al., 2011). Recombination-diffusion model assumes fast recombination of intrinsic point defects at the initial moment of cooling the grown crystal. Fast recombination determines the type of dominant intrinsic point defects in the crystal. In this model was first used mathematical tool which allows you to associate the defect structure of crystal with distribution in the crystal thermal fields during the growth (Prostomolotov et al., 2011). It has been suggested that the fast recombination of intrinsic point defects near the crystallization front as a function of the growth parameter Vg/G (where Vg is the rate of crystal growth; G is the axial temperature gradient) leads to the formation of microvoids or interstitial dislocation loops (Voronkov, 2008). It is assumed that in the case Vg/G < ξcrit formed only interstitial A-microdefects as a result of aggregation of intrinsic interstitial silicon atoms. It is assumed that in the case Vg/G > ξcrit formed only

(Huff, 2002). In such crystals during their growth are formed grown-in microdefects.

**1. Introduction** 

monocrystals.

**Formation During Crystallization of** 

V. I. Talanin and I. E. Talanin

*Classic Private University* 

**Dislocation-Free Silicon Single Crystals** 

Characterization and Non-solvent Liquid Phase Oxidation of Styrene. *Transition Met. Chem.*, Vol.36, pp. 171–177

