**4. Electrical and physical analysis**

282 Numerical Simulation – From Theory to Industry

6.c)and CSMs counterparts.

**Figure 6.** Curves of three-dimensional numerical simulations of IDS as a function of VDS for VGS=0.4 V (saturation region) for DSMs with different α angles [127o (Figure 6.a), 90o (Figure 6.b) and 53o (Figure

(c)

(a)

(b)

In order to understand the electrical and physical behavior of the Diamond structure in relation the to conventional one counterpart, the longitudinal electrical field vectors picture was extracted of DSM ( =90o) and CSM counterpart structures, regarding VGS and VDS equals to 0.4 V and 1.2 V, respectively, in saturation region, as illustrated in Figure 7.

**Figure 7.** Vectors of the resultant longitudinal electric field of the DSM (=90o) (Figure 7.a) and CSM counterpart (Figure 7.b) channel regions for VGS and VDS equal to 0.4 V and 1.2 V, respectively (saturation region).

With the use of TonyPlot3D (Silvaco Inc.) [1] and analyzing Figure 7, it is possible to see how is the behavior of DSM ( =90o) resultant longitudinal electric field ( // ) along of the channel length. Notice that, DSM ( =90o) resultant longitudinal electrical field ( // ) in the channel region edges (1.5x106 V/cm) is smaller than the one found in the center of the channel from of the middle of the channel length (2.0x106 V/cm), due to the smaller interaction between the longitudinal electric field components ( //1 and //2 ) next to DSM edges regions. Besides that, it can beverify that DSM ( =90o) average resultant longitudinal electric field (1.9x106 V/cm) is higher than the one observed in CSM counterpart (1.2.104 V/cm), due to the presence of LCE and VACLETAPE in the Diamond structure.

Additionally, it is plotted a picture of the DSM ( =53o) total drain current density, considering VGS and VDS equals to 0.4 V and 1.2 V, respectively, in saturation region, as illustrated in Figure 8.

Using Numerical Simulations to Study and Design Semiconductors Devices in Micro and Nanoelectronics 285


150 200 250 300

Temperature (oC)

DSM for =90o 27<sup>o</sup> C 100<sup>o</sup> C 200<sup>o</sup> C 300<sup>o</sup> C

VDS=100mV

 DSM for CSM for L= 7m DSM CSM for L= 2.5m

W= 6m VDS = 10mV VGS = -0.5V

VGS(V)

**Figure 9.** DSM (=90o) Log(IDS) as a function of VGS with VDS equal to 100 mV, considering different

Figure 10 shows some results concerning IDLeakas a function of the temperature, considering DSM with different angles and the CSMs counterparts, operating at same bias and

**6. Three-dimensional numerical simulations results at high temperatures** 

To analyze DSM operating at high temperatures, from room temperature up to 300oC, CSM

In order to investigate IDLeak behavior, it is necessary to extract the IDS as a function of VGS curves, at high temperatures. Once IDLeak is obtained in the subthreshold region. In this study, IDLeak is extracted considering VGS equal to -0.5V, as it can be seen in Figure 9, for different temperatures (27oC, 100oC, 200oC and 300oC) and for all devices under evaluation in this work.

and DSM with different angles are implemented by using DevEdit3D [8].

1E-17 1E-16 1E-15 1E-14 1E-13 1E-12 1E-11 1E-10 1E-9 1E-8 1E-7 1E-6 1E-5 1E-4

1E-14

**Figure 10.** DSM and CSM counterpart IDLeak as a function of the temperature.

1E-13

1E-12

IDLeak (A)

1E-11

1E-10

Extraction of IDLeak

IDS(A)

temperatures.

temperature conditions.

**Figure 8.** Curves of the total drain current density of DSM (=53o) (Figure 8.a) and CSM counterpart (Figure 8.b) channel regions for VGS and VDS equal to 0.4 V and 1.2 V, respectively (saturation region).

Figure 8 shows that DSM ( =90o) total drain current density is higher in the center of the channel region than in the vertices (source/drain and channel regions interfaces) of the device, indicating that this layout style can be evolved to the octagonal gate geometric [10].
