**5. Conclusion**

272 Numerical Simulation – From Theory to Industry

Fig. 7 represents the drain conductance as a function of the drain voltage for a series of gate voltage. We notice that the drain conductance is decreases on the one hand as the drain

**Figure 6.** Variation in transconductance as a function of drain-source voltage at different gate-source

**Figure 7.** Variation in drain conductance as a function of drain-source voltage at different gate-source

voltages for a device with parameters and dimensions are listed in Table 1.

voltages for a device with parameters and dimensions are listed in Table 1.

During this work, a comprehensive new model is developed to simulate the static characteristics of short gate-length GaAs MESFET. The validity of the model is established by simulating *Ids*, *gm* and *Gd* characteristics. The performance of the model is compared with experimental results existing in the literature by calculating the I-V characteristics of a device with the gate length is equal to 0,5 µm. It has been demonstrated that the proposed model is a comprehensive one capable of simulating DC characteristics of short gate-length GaAs MESFETs. The transconductance and drain conductance curves obtained by the model have the same behavior with those of the theory, so that it has been shown that proposed model could be a useful tool for device simulators involving short channel MESFETs.
