**6. References**


Morarka and Mishra, India(2005). "A 2-D model for the potential distribution and threshold voltage of fully depleted short-channel ion-implanted silicon MESFET's", *journal of semiconductor technology and science*, Vol 5, No 3, pp 173-181.

**Chapter 13** 

© 2012 Gimenez and Bellodi, licensee InTech. This is an open access chapter distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

© 2012 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution,

**Using Numerical Simulations to Study and** 

The survival of the integrated circuits(ICs) industries is directly linked to its ability to innovate in terms of the developing new semiconductor devices (planar and threedimensional) and new manufacturing process technologies (Silicon-On-Insulator, etc), in theircapability to reduce the dimensions of semiconductor devices focusing on the increasing of integration capability of the devices into a single integrated circuit (IC) and in their efficiency to develop new digital and analog ICs applications to attend the market in different forms of consumption. In this context, the numerical simulators represent a very important role for the ICs industries and very high investments have been done in this area of the process and device simulation tools (Technology Computer-Aided Design, TCAD) in order to use the computer simulations to develop and optimize semiconductor processing

Significant costs reductions can be achieved through the use of numerical simulators for developing new semiconductor manufacturing technologies and devices that are associated with ICs industries. Thinking on developing new devices, the numerical simulations are able to supply a lot of information about the devices in terms of theirs electrical characteristics curves (drain current as a function of gate voltage for the MOSFETs, etc) and mainly in terms of the internal electrical and physical behaviors of the semiconductor devices (current density, electric field density, potential distribution along of the device structure, mobile carriers density along of the channel width and length of a MOSFET, etc) previously to the physical implementation, which is impossible to be obtained, visualized and understood with only the electrical characterization of the physical devices [1-2]. The involved costs with numerical simulations are associated mainly with human resources and infra-structure (hardware and software) while that, if new devices developing were

and reproduction in any medium, provided the original work is properly cited.

**Design Semiconductors Devices in Micro** 

**and Nanoelectronics** 

http://dx.doi.org/10.5772/48334

technologies and devices [1-2].

**1. Introduction** 

Salvador Pinillos Gimenez and Marcello Bellodi

Additional information is available at the end of the chapter

