**5. SOI MOSFEts investigationat high temperatures**

Today, there are much electronic equipments that operate under high-temperature environment (from room temperature up to 300oC) such as avionics, automotive, aircrafts, spacecrafts, ships, train, among other [11-13], where conventional (bulk) CMOS integrated circuits can operate satisfactorily at moderate temperatures (up to 150oC), but when the temperature increases beyond this, the devices present failures arising the threshold voltage reduction and excessive drain leakage current increases [14-18].

Fortunately, thanks to the advantages of SOI CMOS technology, especially at high temperatures, their applications at high temperatures can be extended up to 300oC, where its electrical performance is less impaired than the one found in the conventional MOSFETs [18-20].

In this context, the drain leakage current (IDLeak) of the Diamond SOI nMOSFET (DSM) is analyzed from room temperature up to 300oC by the three-dimensional numerical simulator ATLAS [1]. The DSM IDLeakresults are then compared tothe one found in the SOI MOSFETs (CSM) counterpart, taking into account the same die area, geometric factor and bias and temperature conditions.
