**Appendix**

Example Mathematica [13] code is shown here.

[1] G.F. Engen and C.A. Hoer, "'Thru-Reflect-Line': an improved technique for calibrating the dual six-port automatic network analyzer," IEEE Trans. Microwave Theory Tech.,

[2] P. Colestock and M. Foley, "A generalized TRL Algorithm for S-parameter deembedding," Fermi National Accelerator Laboratory Technical Memo, TM-1781, April

[3] D. Rytting, IEEE MTT/ED seminar on Calibration and Error Correction Techniques for Network Analysis, OGI Center for Professional Development, September, 2004. [4] M.C.A.M. Koolen, J.A.M. Geelen, and M.P.J.G. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization," Proc. IEEE, Bipolar/BiCMOS

[5] S. Georgakopoulos and S. Ogurtsov, "An S-parameter extraction technique for broadband characterization of microstrip-to-SIW transitions," IEEE AP-S Dig., 428.4, June

[6] J.C. Rautio, "A de-embedding algorithm for electromagnetics," Int. J. Microwave

[7] H. Ito and K. Masu, "A simple through-only de-embedding method for on-wafer Sparameter measurements up to 110GHz," IEEE MTT-S International Microwave

[8] N. Li, K. Matsushita, N. Takayama, S. Ito, K. Okada, and A. Matsuzawa, "Evaluation of a multi-line de-embedding technique up to 110 GHz for millimeter-wave CMOS circuit

[11] M.A.T. Sanduleanu and J.R. Long, "CMOS integrated transceivers for 60GHz UWB communication," IEEE International Conference on Ultra-Wideband (ICUWB), pp.508-

[12] T. Hirano, H. Nakano, Y. Hirachi, J. Hirokawa, and M. Ando, "De-embedding method using an electromagnetic simulator for characterization of transistors in the millimeterwave band," IEEE Transactions on Microwave Theory and Techniques, Vol.58, No.10,

design," IEICE Trans. Fundamentals, vol.E93-A, No.2, pp. 431-439, Feb. 2010. [9] Q.-H. Bu, N. Li, K. Bunsen, H. Asada, K. Matsushita, K. Okada, and A. Matsuzawa, "Evaluation of a multi-line de-embedding technique for millimeter-wave CMOS circuit design," Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, Dec. 2010. [10] T. Hirano, K. Okada, J. Hirokawa, and M. Ando, "Thru-Line (TL) calibration technique for on-wafer measurement," Proceedings of International Symposium on Antennas and

Propagation (ISAP), Paper ID: 104, Macao, November 23-26, 2010.

Millimeter-Wave Computer-Aided Eng., vol.1, no.3, pp.282-287, 1991.

**7. References** 

1993.

2009.

vol.MTT-27, No.12, Dec. 1979.

Circuits and Tech. Meeting, pp.188-191, Sept. 1991.

Symposium (IMS), pp. 383-386, June 2008.

513, Singapore, September 2007.

pp.2663-2672, October 2010.

#### **7. References**

256 Numerical Simulation – From Theory to Industry


[13] Mathematica, Wolfram Research, Champaign, IL [Online]. Available: http://www. wolfram.com/

**Chapter 12** 

© 2012 Khemissi, licensee InTech. This is an open access chapter distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

© 2012 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution,

To solve the system of the two dimensional partial differential equations, we based for the works of Chin and Wu (1992, 1993), the Green's function technique is used in these

and reproduction in any medium, provided the original work is properly cited.

**Analytical Model and Numerical Simulation** 

The analytical model and simulation numerical of semiconductor devices is one of the important steps for Integrate Circuit fabrication, verication and characterization. Each semiconductor device has models that satises the requirements to the device under different operating conditions. GaAs MESFET is a promising semiconductor device used in many applications in the microwave domain. The elements which compose the MESFET transistors can be gathered in two distinct categories. There are extrinsic and intrinsic elements; the first category represents the different structures of access like the side resistances *Rs* and *Rd*. The intrinsic elements like the transconductance *gm* and drain conductance *gd* translate by their nature and their behavior localized of the device physical structure. Our main aim in these sheets related on the one hand to the optimization of a two dimensional (2D) analytical model for the static characteristics of short gate-length GaAs MESFET's, this model takes into account the different physical specific phenomena of the device, and on the other hand to calculate the variation of some intrinsic elements (transconductance and drain conductance) as a function of the biasing voltages. The model suggested has enables to us to calculate and trace the different series from curves. The

**for the Transconductance and Drain** 

**Conductance of GaAs MESFETs** 

Additional information is available at the end of the chapter

results obtained are well represented and interpreted.

**2. General characteristics of the model**

The major features of this study are:

Saadeddine Khemissi

http://dx.doi.org/10.5772/47741

**1. Introduction** 

