**2. Devices used to perform the study**

So, in order to qualify and quantify the benefits of Diamond layout style to improve the transistor performance, it were implemented three pairs of SOI nMOSFETs, being three Diamond transistors with different α angles and other three conventional SOI nMOSFETs counterparts, regarding the same gate area (AG). Table I presents the devices dimensions used to implement these devices in the DevEdidt3D from (TCAD/Silvaco Inc) [8]. A similar TCAD to implement devices is the Sentaurus Structure Editor of the Synopsys, Inc [9].


**Table 1.** Devices Dimensions used to the study.

The constructive characteristics of these devices are: gate-oxide (tox), silicon-film (tSI) and buried-oxide (tBOX) thickness are 2 nm, 100 nm and 400 nm, respectively, and drain/source and channel doping concentrations are 5.5x1017 cm-3 and 1x1020 cm-3, respectively.
