**7. References**


range of operating frequency can be covered by GaN-based power devices. The concerns of GaN transistors regarding charge carrier trapping and reliability is gradually extenuated by

Device modelling is another important issue which ensures the power amplifier design community fast design process and accurate simulations. As examples, VHF class E

The author would like to thank his family for the support and understanding during the preparation of the manuscript. Also, the author would like to express his appreciation to the research assistants, staffs and students of the RF and Microwave Laboratory, the Sirindhorn International Thai-German Graduate School of Engineering, King Mongkut's University of Technology North Bangkok for their interest in RF and microwave topics as well as for their

Fischer, G. (2004). Architectural benefits of wide bandgap RF power transistors for

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the progress in GaN device technology.

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2005

**6. Acknowledgment** 

support.

**7. References** 

amplifier and 2.45 GHz class AB amplifier have been presented.

