**Un-Cooled Microbolometers with Amorphous Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films**

Mario Moreno1, Alfonso Torres1, Roberto Ambrosio2 and Andrey Kosarev1 *1National Institute of Astrophysics, Optics and Electronics, INAOE, 2Universidad Autonoma de Ciudad Juarez, UACJ, Mexico* 

## **1. Introduction**

Bolometers

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matrices. *Technical Physics Letters*, *27*(5), 378-380. doi:10.1134/1.1376757

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and Their Thickness Dependence. *Jpn. J. Appl. Phys.*, *50*, 055804.

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(2008). Amorphous silicon based large format uncooled FPA microbolometer technology. *Proceedings of SPIE*, *6940*, 694023-694023-7. Spie. doi:10.1117/12.784661 Smith, A., Jones, F. E., & Chasmar, R. P. (1968). *The Detection and Measurement of Infrared* 

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oxide thin films in mixed phase for microbolometer applications. *Journal of Physics* 

Resistance at Room Temperature in W-Doped VO2 Thin Films on Al2O3 Substrate

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for uncooled bolometric detectors. *Infrared Physics & Technology*, *47*(3), 273-277.

signal-to-noise ratio quantum well bolometer materials. *Proceedings of SPIE*, *6401*,

(2001). Vanadium oxide films with improved characteristics for ir microbolometric

22

12.755128

12.852682

Silicon integrated circuits (IC) in conjunction with the micro-machining technology for thin films, have opened new ways for the development of low cost and reliable night vision systems based on thermal detectors. Among the thermal detectors used as pixels on IR focal plane arrays, the microbolometer appears as one of them. A microbolometer is a device in which the IR transduction is performed through a change in the resistivity of its thermosensing material, due to the heating effect caused by the absorbed radiation. Among the requirements for the materials used as thermo-sensing layer in microbolometers it can be mentioned a high activation energy (Ea), high temperature coefficient of resistance (TCR), low noise, and compatibility with standard CMOS fabrication processes. A variety of materials have been used as thermo-sensing elements in microbolometers, as vanadium oxide (VOx) (B. E. Cole, 1998, 2000), metals (A. Tanaka, 1996), polycrystalline (S. Sedky, 1998) and amorphous semiconductors (A. J. Syllaios, 2000).

Those materials have shown good characteristics but also some disadvantages. VOx has a moderated value of TCR (0.021 K-1) and low resistivty, however it is not a standard material in the IC technology. Metals as titanium are compatible with the standard IC technology, have low resistivity but also have very low TCR values. Polycrystalline semiconductors have high TCR values (0.05 K-1) and moderated resistivity, however they are deposited a relatively high temperatures (700 - 900 °C), which results in an incompatibility with a microbolometer fabrication post-process on a silicon wafer surface, containing an readout integrated circuit (ROIC).

Recently, it has been reported the study of W-doped VO2 (H. Takami, 2011) which has a TCR of above 0.1 k-1, and low resistivity values. However, this material is not standard on Si CMOS microelectronics facilities. GaAs/AlGaAs heterojunction bolometers (P.K.D.D.P. Pitigala, 2011) also have been reported, which have demonstrated TCR values of 0.04 K-1. However those structures are very complex, since they are fabricated with 30 periods of GaAs/Al0.57Ga0.43As junctions.

Hydrogenated amorphous silicon (a-Si:H) is a mature material on the microelectronics and photovoltaic industries. For un-cooled microbolometers a-Si:H is very attractive to be used

Un-Cooled Microbolometers with Amorphous

Fig. 1. Microbolometer scheme.

and the surroundings radiate to it.

through the supporting structure.

level and two-level configurations.

the pixel, consuming area also. That result in a 20% fill factor.

saved substrate area, achieving a fill factor of above 70%.

**2.1 Thermal insulation** 

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 25

There are three mechanism of heat transfer that occurs in a thermal detector, they are conduction, convection and radiation. Conduction mechanisms occur when the heat flows from the thermo-sensing area along the supporting legs to the substrate. Conduction is critical when the pixels are very close, since the heat can flow from one pixel to a neighbor pixel. Convection occurs when the heat flows in the presence of a surrounding atmosphere, this mechanism is not very important if the detector is encapsulated in a vacuum package. Radiation mechanism is presented by the fact that the detector radiates to its surroundings

When the microbolometers are encapsulated in an evacuated package, with an IR transmitting window, convection and radiation mechanism are minimized. Thus the main loss of heat mechanism is conduction from the thermo-sensing material to the substrate

The supporting structure is a very important part of thermal detectors, it provides three functions, mechanical support, electrical conducting path and thermal conducting path. In order to avoid heat losses in microbolometers, it is necessary to improve the thermal insulation. In microbolometers there are two main thermal insulation configurations: single-

Single level configuration consist in deposit a membrane over the silicon (Si) substrate and after that, open a hole in the Si substrate, employing bulk micromachining techniques. Bulk micromachining consumes area, since the Si substrate is etched with a side wall angel of 54.9 degrees. The electronic circuit (which forms part of the read out circuit) is fabricated next to

The two-level configuration allows the fabrication of the electronics circuit in the substrate and after that, the fabrication of the microbolometer in a low temperature post process over the electronics, by using surface micromachining techniques. With this configuration is

In order to fabricate thermal sensors in a post process, over a wafer surface, containing an IC circuit; it is necessary to use low temperatures during the fabrication process. By employing

as thermo-sensing material, since intrinsic a-Si:H has a very large activation energy (Ea) of above 1 eV, and therefore, provide a very large thermal coefficient of resistance (TCR) of 0.13 K-1. However intrinsic a-Si:H has a very low room temperature conductivity (σRT ≤ 1x10-9 (Ωcm)-1), resulting in a very high pixel resistance when is used as thermo sensing material in microbolometers (Rpixel ≥ 109 Ω). Such high pixel resistance causes a mismatch with the input impedance of the CMOS ROIC. For commercial microbolometers, boron doping is commonly used in order to decrease the undesirable resistivity of intrinsic a-Si:H (A. J. Syllaios, 2000), to values of pixel resistance of around 30x106 Ω, however it also results on a reduction on the activation energy (Ea ≈ 0.22 eV) and on the TCR (-0.028 K-1), and therefore in a decrement on the pixel performance.

In our work we have studied the electrical and optical properties of amorphous germaniumsilicon (a-GexSiy:H) and amorphous germanium-silicon-boron (a-GexSiyBz:H) thin films deposited by plasma (PECVD) (R. Ambrosio, 2004; A. Kosarev, 2006; A. Torres, 2008; M. Moreno, 2007, 2008, 2010). Intrinsic a-GexSiy:H has better performance characteristics than a-Si:H,B when is used as thermo-sensing element, since it has a high activation energy (Ea = 0.37 eV), a high TCR (α = -0.047 K-1), a moderated room temperature conductivity (σRT ≈ 6x10-5 (Ωcm)-1), and therefore a moderated pixel resistance (Rpixel ≈ 30x107 Ω) (M. Moreno, 2007, 2008) when is used as thermo sensing element in microbolometers.

In the other hand a-GexSiyBz:H has an improved room temperature conductivity (σRT ≈ 10-2- 10-3 (Ωcm)-1), and therefore a moderated pixel resistance (Rpixel ≈ 1-5x106 Ω) (M. Moreno, 2007, 2008), but also it has a low activation energy (Ea ≈ 0.18 - 0.22 eV) and low the TCR (-0.023 -0.028 K-1).

In this chapter we present a summary on the study of a-GexSiy:H and a-GexSiyBz:H thin films and their application as thermo-sensing element in microbolometers. We have fabricated, characterized and studied two devices configurations labeled as planar (the standard configuration used in commercial microbolometer arrays) and sandwich structures. The later shows several advantages when intrinsic materials are used as thermo-sensing element. Finally we studied the performance characteristics of the different device configurations and compared them with commercial devices and those reported on literature.

## **2. Principle of operation of un-cooled microbolometers**

The operation of a microbolometer is based on the temperature rise of the thermo-sensing material by the absorption of the incident IR radiation. The change in temperature causes a change on its electrical resistance, which is measured by an external circuit. Microbolometers based on amorphous semiconductors have advantages over other types of thermal detectors, including microbolometers that use other kind of thermo-sensing materials. The advantages are mainly technological, since these microbolometers are fully compatible with silicon CMOS fabrication technology, there is no need of additional fabrication equipment in a IC production line. Are relatively of simple fabrication and can be processed at relatively low temperature by PECVD. The above make them ideal for a post-process fabrication over a CMOS read-out circuit.

Fig. 1 shows a scheme of one microbolometer (B. E. Cole, 1998); it is built on a membrane usually made of SiNx. Over the membrane is deposited the thermo-sensing material and the IR absorber material. The membrane provides thermal isolation to the thermo-sensing film.

Fig. 1. Microbolometer scheme.

## **2.1 Thermal insulation**

24 Bolometers

as thermo-sensing material, since intrinsic a-Si:H has a very large activation energy (Ea) of above 1 eV, and therefore, provide a very large thermal coefficient of resistance (TCR) of 0.13 K-1. However intrinsic a-Si:H has a very low room temperature conductivity (σRT ≤ 1x10-9 (Ωcm)-1), resulting in a very high pixel resistance when is used as thermo sensing material in microbolometers (Rpixel ≥ 109 Ω). Such high pixel resistance causes a mismatch with the input impedance of the CMOS ROIC. For commercial microbolometers, boron doping is commonly used in order to decrease the undesirable resistivity of intrinsic a-Si:H (A. J. Syllaios, 2000), to values of pixel resistance of around 30x106 Ω, however it also results on a reduction on the activation energy (Ea ≈ 0.22 eV) and on the TCR (-0.028 K-1), and therefore

In our work we have studied the electrical and optical properties of amorphous germaniumsilicon (a-GexSiy:H) and amorphous germanium-silicon-boron (a-GexSiyBz:H) thin films deposited by plasma (PECVD) (R. Ambrosio, 2004; A. Kosarev, 2006; A. Torres, 2008; M. Moreno, 2007, 2008, 2010). Intrinsic a-GexSiy:H has better performance characteristics than a-Si:H,B when is used as thermo-sensing element, since it has a high activation energy (Ea = 0.37 eV), a high TCR (α = -0.047 K-1), a moderated room temperature conductivity (σRT ≈ 6x10-5 (Ωcm)-1), and therefore a moderated pixel resistance (Rpixel ≈ 30x107 Ω) (M. Moreno,

In the other hand a-GexSiyBz:H has an improved room temperature conductivity (σRT ≈ 10-2- 10-3 (Ωcm)-1), and therefore a moderated pixel resistance (Rpixel ≈ 1-5x106 Ω) (M. Moreno, 2007, 2008), but also it has a low activation energy (Ea ≈ 0.18 - 0.22 eV) and low the TCR

In this chapter we present a summary on the study of a-GexSiy:H and a-GexSiyBz:H thin films and their application as thermo-sensing element in microbolometers. We have fabricated, characterized and studied two devices configurations labeled as planar (the standard configuration used in commercial microbolometer arrays) and sandwich structures. The later shows several advantages when intrinsic materials are used as thermo-sensing element. Finally we studied the performance characteristics of the different device configurations and compared them with commercial devices and those reported on

The operation of a microbolometer is based on the temperature rise of the thermo-sensing material by the absorption of the incident IR radiation. The change in temperature causes a change on its electrical resistance, which is measured by an external circuit. Microbolometers based on amorphous semiconductors have advantages over other types of thermal detectors, including microbolometers that use other kind of thermo-sensing materials. The advantages are mainly technological, since these microbolometers are fully compatible with silicon CMOS fabrication technology, there is no need of additional fabrication equipment in a IC production line. Are relatively of simple fabrication and can be processed at relatively low temperature by PECVD. The above make them ideal for a

Fig. 1 shows a scheme of one microbolometer (B. E. Cole, 1998); it is built on a membrane usually made of SiNx. Over the membrane is deposited the thermo-sensing material and the IR absorber material. The membrane provides thermal isolation to the thermo-sensing film.

2007, 2008) when is used as thermo sensing element in microbolometers.

**2. Principle of operation of un-cooled microbolometers** 

post-process fabrication over a CMOS read-out circuit.

in a decrement on the pixel performance.

(-0.023 -0.028 K-1).

literature.

There are three mechanism of heat transfer that occurs in a thermal detector, they are conduction, convection and radiation. Conduction mechanisms occur when the heat flows from the thermo-sensing area along the supporting legs to the substrate. Conduction is critical when the pixels are very close, since the heat can flow from one pixel to a neighbor pixel. Convection occurs when the heat flows in the presence of a surrounding atmosphere, this mechanism is not very important if the detector is encapsulated in a vacuum package. Radiation mechanism is presented by the fact that the detector radiates to its surroundings and the surroundings radiate to it.

When the microbolometers are encapsulated in an evacuated package, with an IR transmitting window, convection and radiation mechanism are minimized. Thus the main loss of heat mechanism is conduction from the thermo-sensing material to the substrate through the supporting structure.

The supporting structure is a very important part of thermal detectors, it provides three functions, mechanical support, electrical conducting path and thermal conducting path. In order to avoid heat losses in microbolometers, it is necessary to improve the thermal insulation. In microbolometers there are two main thermal insulation configurations: singlelevel and two-level configurations.

Single level configuration consist in deposit a membrane over the silicon (Si) substrate and after that, open a hole in the Si substrate, employing bulk micromachining techniques. Bulk micromachining consumes area, since the Si substrate is etched with a side wall angel of 54.9 degrees. The electronic circuit (which forms part of the read out circuit) is fabricated next to the pixel, consuming area also. That result in a 20% fill factor.

The two-level configuration allows the fabrication of the electronics circuit in the substrate and after that, the fabrication of the microbolometer in a low temperature post process over the electronics, by using surface micromachining techniques. With this configuration is saved substrate area, achieving a fill factor of above 70%.

In order to fabricate thermal sensors in a post process, over a wafer surface, containing an IC circuit; it is necessary to use low temperatures during the fabrication process. By employing

Un-Cooled Microbolometers with Amorphous

α(T)≈0.0015 K-1).

are described also.

conductance, Gth.

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 27

which are compatible with Si-CMOS technology, however they have low values of TCR (Pt,

Hydrogenated amorphous silicon (a-Si:H) prepared by PECVD is very attractive to be used as thermo-sensing film in microbolometers, for room temperature operation (A. J. Syllaios, 2000). It is compatible with the IC technology, has a high activation energy, Ea ≈ 0.8 - 1 eV and high value of TCR, α(T) ≈ 0.1 – 0.13 K-1, however it also has a very high undesirable resistivity, which often cause a mismatch with the input impedance of the read-out circuits. In order to reduce the a-Si:H high resistance, boron doping has been employed. The B doped a-Si:H films have a significant reduction in its resistivity, however a reduction in Ea and TCR

**Material TCR (K-1) Ea (eV) σRT (Ω cm)-1 Reference**  VOx 0.021 0.16 2x10-1 B. E. Cole, 1998 a-Si:H (PECVD) 0.1 - 0.13 0.8-1 ~ 1x10-9 A. J. Syllaios, 2000 a-Si:H,B (PECVD) 0.028 0.22 5x10-3 A. J. Syllaios, 2000 a-GexSiy:H (PECVD) 0.043 0.34 1.6x10-6 M. Moreno, 2008 Poly-SiGe 0.024 0.18 9x10-2 S. Sedky, 1998 GexSi1-xOy 0.042 0.32 2.6x10-2 E. Iborra, 2002 YBaCuO 0.033 0.26 1x10-3 J. Delerue, 2003

Table 1. Common materials employed as thermo-sensing films in microbolometers.

they have also the smallest values of room temperature conductivity, σRT.

**3. Main figures of merit of un-cooled microbolometers** 

In our work (R. Ambrosio, 2004; A. Kosarev, 2006; A. Torres, 2008; M. Moreno, 2007, 2008, 2010), amorphous germanium-silicon, a-GexSiy:H, deposited by PECVD has been studied as thermo-sensing films in un-cooled microbolometer, obtaining high activation energy, Ea= 0.34 eV, consequently a high value of TCR = 0.043 K-1 and improved but still high resistivity. Table 1 shows the most common materials employed as thermo-sensing films in microbolometers. As can be seen in the table, there are available several materials which can be used as thermo-sensing films. Intrinsic amorphous silicon, a-Si:H and a-GexSiy:H, show the largest TCR values and are fully compatible with the silicon CMOS technology, however

In this section the different figures of merit of a microbolometer, as thermal characteristics, responsivity and detectivity are presented. The different types of noise in microbolometer

**3.1 Thermal capacitance, Cth, thermal conductance, Gth and thermal response time, τth** A simple representation of a microbolometer is shown in Fig. 2, the detector has a thermal capacitance, Cth, and it is coupled to the substrate which is a heat sink, by a thermal

When the detector receives modulated IR radiation, the rise in temperature is found by solving the balance equation, Eq. 2; where *Cth* (expressed in JK-1) is the thermal capacitance of the supporting membrane containing the thermo sensing film, while *Gth* (expressed in WK-1) is the thermal conductance of the legs, which is considered the main heat loss

is obtained also, Ea ≈ 0.22 eV and TCR ≈ 0.028 K-1 (A. J. Syllaios, 2000).

Plasma Enhanced Chemical Vapor deposition (PECVD) it is possible to deposit thin films at relatively low temperatures (150 - 350 oC).

#### **2.2 Infrared absorber films**

An absorber element is a very important part in un-cooled IR microbolometers, its role is based in the absorption of IR radiation and the transfer of heat to the thermo-sensing material. The main requirements of absorbing materials for un-cooled microbolometers are: A high absorbance coefficient in the range λ = 8 – 12 μm, simple fabrication and compatibility with the silicon CMOS technology.

The IR absorption can be improved employing a resonant micro-cavity, where the thermosensing film is separated from the substrate by a gap equivalent to one quarter of the wavelength at which it will be operating. A mirror (Al or Ti) is deposited over the substrate surface, under the thermo-sensing material. In this configuration the radiation that was not absorbed by the thermo-sensing film will resound inside the cavity and will be re-absorbed by the thermo-sensing element.

Terrestrial objects have temperatures around of 300K, with IR emission centered in 10 μm. Thus un-cooled microbolometers employed for detection of objects at room temperature, should have a gap from the substrate of 2.5 μm, for the fabrication of the resonant microcavity.

Several materials have been employed as absorbing films in microbolometers, which are deposited over the thermo-sensing film. Among the most employed are some metals, as black gold film (M. Hirota, 1998), which has a very high absorption coefficient of IR radiation (more than 90 %), however it is not a standard material in CMOS technology. SiNx films are employed commonly as absorber films in microbolometers (A. Schaufelbühl, 2001, S. Sedky, 1998), since its absorption coefficient can be tuned by the deposition parameters and it is a standard material in CMOS technology.

#### **2.3 Thermo-sensing films**

The thermo-sensing material is perhaps the most important element in a microbolometer. The increment in temperature in the sensing material causes a change in some temperaturedependent parameter. In the case of a microbolometer that parameter is the resistance.

The thermo-sensing material should have a large temperature coefficient of resistance, TCR (α(T)), which is defined by Eq. 1, where *Ea* is the activation energy, *K* is the Boltzman constant and *T* is temperature.

$$a(\mathbf{T}) = \begin{pmatrix} \mathbf{1}/\mathbf{R} \end{pmatrix} \begin{bmatrix} \mathbf{dR}/\mathbf{dT} \end{bmatrix} \approx \mathbf{E\_a}/\mathbf{KT}^2 \tag{1}$$

A large TCR means that a small change in temperature in the sensing material will result in a large change in resistance. Eq. 1 shows that the TCR and *Ea* are directly related, thus a high *Ea* in the material is needed.

For un-cooled microbolometers vanadium oxide, VOx, was the first thermo-sensing element employed (B. E. Cole, 1998), since it has a moderated TCR, α(T) ≈ 0.021 K-1, however it is not a standard material in silicon CMOS technology. Some metals have been employed also,

Plasma Enhanced Chemical Vapor deposition (PECVD) it is possible to deposit thin films at

An absorber element is a very important part in un-cooled IR microbolometers, its role is based in the absorption of IR radiation and the transfer of heat to the thermo-sensing material. The main requirements of absorbing materials for un-cooled microbolometers are: A high absorbance coefficient in the range λ = 8 – 12 μm, simple fabrication and

The IR absorption can be improved employing a resonant micro-cavity, where the thermosensing film is separated from the substrate by a gap equivalent to one quarter of the wavelength at which it will be operating. A mirror (Al or Ti) is deposited over the substrate surface, under the thermo-sensing material. In this configuration the radiation that was not absorbed by the thermo-sensing film will resound inside the cavity and will be re-absorbed

Terrestrial objects have temperatures around of 300K, with IR emission centered in 10 μm. Thus un-cooled microbolometers employed for detection of objects at room temperature, should have a gap from the substrate of 2.5 μm, for the fabrication of the resonant micro-

Several materials have been employed as absorbing films in microbolometers, which are deposited over the thermo-sensing film. Among the most employed are some metals, as black gold film (M. Hirota, 1998), which has a very high absorption coefficient of IR radiation (more than 90 %), however it is not a standard material in CMOS technology. SiNx films are employed commonly as absorber films in microbolometers (A. Schaufelbühl, 2001, S. Sedky, 1998), since its absorption coefficient can be tuned by the deposition parameters

The thermo-sensing material is perhaps the most important element in a microbolometer. The increment in temperature in the sensing material causes a change in some temperaturedependent parameter. In the case of a microbolometer that parameter is the resistance.

The thermo-sensing material should have a large temperature coefficient of resistance, TCR (α(T)), which is defined by Eq. 1, where *Ea* is the activation energy, *K* is the Boltzman

A large TCR means that a small change in temperature in the sensing material will result in a large change in resistance. Eq. 1 shows that the TCR and *Ea* are directly related, thus a high

For un-cooled microbolometers vanadium oxide, VOx, was the first thermo-sensing element employed (B. E. Cole, 1998), since it has a moderated TCR, α(T) ≈ 0.021 K-1, however it is not a standard material in silicon CMOS technology. Some metals have been employed also,

T 1 /R dR /dT E /KT a (1)

relatively low temperatures (150 - 350 oC).

compatibility with the silicon CMOS technology.

and it is a standard material in CMOS technology.

<sup>2</sup>

**2.2 Infrared absorber films** 

by the thermo-sensing element.

**2.3 Thermo-sensing films** 

constant and *T* is temperature.

*Ea* in the material is needed.

cavity.

which are compatible with Si-CMOS technology, however they have low values of TCR (Pt, α(T)≈0.0015 K-1).

Hydrogenated amorphous silicon (a-Si:H) prepared by PECVD is very attractive to be used as thermo-sensing film in microbolometers, for room temperature operation (A. J. Syllaios, 2000). It is compatible with the IC technology, has a high activation energy, Ea ≈ 0.8 - 1 eV and high value of TCR, α(T) ≈ 0.1 – 0.13 K-1, however it also has a very high undesirable resistivity, which often cause a mismatch with the input impedance of the read-out circuits. In order to reduce the a-Si:H high resistance, boron doping has been employed. The B doped a-Si:H films have a significant reduction in its resistivity, however a reduction in Ea and TCR is obtained also, Ea ≈ 0.22 eV and TCR ≈ 0.028 K-1 (A. J. Syllaios, 2000).


Table 1. Common materials employed as thermo-sensing films in microbolometers.

In our work (R. Ambrosio, 2004; A. Kosarev, 2006; A. Torres, 2008; M. Moreno, 2007, 2008, 2010), amorphous germanium-silicon, a-GexSiy:H, deposited by PECVD has been studied as thermo-sensing films in un-cooled microbolometer, obtaining high activation energy, Ea= 0.34 eV, consequently a high value of TCR = 0.043 K-1 and improved but still high resistivity.

Table 1 shows the most common materials employed as thermo-sensing films in microbolometers. As can be seen in the table, there are available several materials which can be used as thermo-sensing films. Intrinsic amorphous silicon, a-Si:H and a-GexSiy:H, show the largest TCR values and are fully compatible with the silicon CMOS technology, however they have also the smallest values of room temperature conductivity, σRT.

## **3. Main figures of merit of un-cooled microbolometers**

In this section the different figures of merit of a microbolometer, as thermal characteristics, responsivity and detectivity are presented. The different types of noise in microbolometer are described also.

## **3.1 Thermal capacitance, Cth, thermal conductance, Gth and thermal response time, τth**

A simple representation of a microbolometer is shown in Fig. 2, the detector has a thermal capacitance, Cth, and it is coupled to the substrate which is a heat sink, by a thermal conductance, Gth.

When the detector receives modulated IR radiation, the rise in temperature is found by solving the balance equation, Eq. 2; where *Cth* (expressed in JK-1) is the thermal capacitance of the supporting membrane containing the thermo sensing film, while *Gth* (expressed in WK-1) is the thermal conductance of the legs, which is considered the main heat loss

Un-Cooled Microbolometers with Amorphous

Eq. 5.

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 29

responsivity, *Ru*) or Amps/Watts (current responsivity, *RI*). In order to obtain *R*, we can use the simplest model, where it is assumed that there is no heating due the electrical bias in the detector (Joulean heating), and also it is assumed a constant electrical bias to the detector.

When the microbolometer is current biased, the output signal is voltage, *Vs*, given by Eq. 6, where *Ib* is the bias current, *Rcell* is the electrical resistance of the microbolometer, α is the TCR, described by Eq. 1 and ΔT is the increment of temperature in the detector, obtained in

 1/2 2 2

 1/2 2 2

 

 

Voltage responsivity, *Rv*, is obtained by combining equations 3 and 6, and dividing by

th *R IR v b cell*

For unmodulated radiation, ω = 0, Eq. 7 is simplified in Eq. 8, which is the DC responsivity. When the microbolometer is voltage biased equations 7 and 8 are transformed to Eq. 9 and

T (6)

/ G (8)

*<sup>b</sup> cell* (10)

1/2 4 f *V kT R <sup>j</sup> cell cell* (11)

(7)

(9)

*V IR s b cell*

th th / G 1 *R IR v b cell*

th th / G 1 *RV R <sup>I</sup>*

th *RV R <sup>I</sup>*

*<sup>b</sup> cell*

 / G 

There are four main sources of noise in microbolometers (P. W. Kruse, 2001), which are Johnson noise, 1/f noise, temperature fluctuation noise and background fluctuation noise,

The Johnson noise component, *Vj*, is described by Eq. 11, where *k* is the Boltzmann constant, *Tcell* is the bolometer temperature, *Rcell* is the bolometer resistance and Δ*f* is the bandwidth of

The 1/f noise is characterized by a spectrum that depends inversely on frequency and is described by Eq. 12, where *V* is the product of the bias current - *Ib* and the electrical resistance of the microbolometer - *Rcell*, *f* is the frequency at which the noise is measured and

 

*PoAcell,* which is the incident radiant power, the result is shown in Eq. 7.

 

*n* is the 1/f noise parameter, which depend on the material detector.

 

these noise types are uncorrelated and are described in the following subsections.

Eq. 10 respectively, where *RI* is current responsivity.

**3.3 Noise in microbolometers** 

**3.3.1 Johnson noise** 

the integration time.

**3.3.2 1/f noise** 

Fig. 2. Microbolometer representation.

mechanism. ΔT is the temperature difference of the hot and reference junctions. *Acell* is the detector area, *β* is the fill factor, which is the radio of the thermo-sensing film area to the total cell area, *η* is the optical absorption coefficient, defined as the fraction of the radiant power falling on the thermo-sensing area, which is absorbed by that area. *Po* is the intensity of the IR modulated radiation, ω is the angular modulation frequency and *t* is time [2.6].

$$\mathbf{C\_{th}d(\Delta T)/dt + G\_{th}(\Delta T) = \eta \beta A\_{cell} P\_0 \exp(jat)}\tag{2}$$

The solution of the balance equation is shown in Eq. 3:

$$
\Delta \mathbf{T} = \eta \beta A\_{\rm cell} \ P\_0 \;/\ \; \mathbf{G}\_{\rm th} \left( 1 + \rho^2 \tau\_{\rm th} \right)^2 \tag{3}
$$

Where, τth (expressed in seconds) is the thermal response time of the microbolometer, it is defined by Eq. 4, which establishes a relation between τth, Cth and Gth. Typical values of thermal time constant are in the range of milliseconds, which are much longer than the typical time of photon detectors.

$$
\tau\_{\rm th} = \mathbb{C}\_{\rm th} \;/\ \mathbb{G}\_{\rm th} \tag{4}
$$

For unmodulated radiation Eq. 3 can be reduced to:

$$
\Delta\text{T}\{\alpha = 0\}\quad = \eta\beta A\_{\text{cell}}\ P\_0 \text{ / }\text{G}\_{\text{th}}\tag{5}
$$

Eq. 5 shows that the increment of temperature, ΔT, in the detector is inversely proportional to the thermal conductance *Gth* of its legs. In order to achieve a high performance microbolometers ΔT should be as high as possible and therefore *Gth* as small as possible, which can be done by making very thin the detector legs.

#### **3.2 Responsivity**

Responsivity, *R*, is defined as the ratio of the pixel output signal to the incident radiant power (in Watts) falling on the pixel (P. W. Kruse, 2001). The output signal is an electrical signal that can be voltage or current, thus *R* can be expressed in Volts/Watts (voltage

mechanism. ΔT is the temperature difference of the hot and reference junctions. *Acell* is the detector area, *β* is the fill factor, which is the radio of the thermo-sensing film area to the total cell area, *η* is the optical absorption coefficient, defined as the fraction of the radiant power falling on the thermo-sensing area, which is absorbed by that area. *Po* is the intensity of the IR modulated radiation, ω is the angular modulation frequency and *t* is time [2.6].

   

th th th C / G (4)

*A P cell* Gth (5)

*A P cell* <sup>0</sup>exp *j t* (2)

(3)

C d T /dt G T th th

0 2 2 1/2 T /

*A P cell* G (1 ) th th

Where, τth (expressed in seconds) is the thermal response time of the microbolometer, it is defined by Eq. 4, which establishes a relation between τth, Cth and Gth. Typical values of thermal time constant are in the range of milliseconds, which are much longer than the

<sup>0</sup> 0 T /

 

Eq. 5 shows that the increment of temperature, ΔT, in the detector is inversely proportional to the thermal conductance *Gth* of its legs. In order to achieve a high performance microbolometers ΔT should be as high as possible and therefore *Gth* as small as possible,

Responsivity, *R*, is defined as the ratio of the pixel output signal to the incident radiant power (in Watts) falling on the pixel (P. W. Kruse, 2001). The output signal is an electrical signal that can be voltage or current, thus *R* can be expressed in Volts/Watts (voltage

The solution of the balance equation is shown in Eq. 3:

For unmodulated radiation Eq. 3 can be reduced to:

which can be done by making very thin the detector legs.

Fig. 2. Microbolometer representation.

typical time of photon detectors.

**3.2 Responsivity** 

responsivity, *Ru*) or Amps/Watts (current responsivity, *RI*). In order to obtain *R*, we can use the simplest model, where it is assumed that there is no heating due the electrical bias in the detector (Joulean heating), and also it is assumed a constant electrical bias to the detector.

When the microbolometer is current biased, the output signal is voltage, *Vs*, given by Eq. 6, where *Ib* is the bias current, *Rcell* is the electrical resistance of the microbolometer, α is the TCR, described by Eq. 1 and ΔT is the increment of temperature in the detector, obtained in Eq. 5.

$$V\_s = I\_b R\_{cell} \text{or } \Delta \Gamma \tag{6}$$

Voltage responsivity, *Rv*, is obtained by combining equations 3 and 6, and dividing by *PoAcell,* which is the incident radiant power, the result is shown in Eq. 7.

$$R\_v = \eta \,\,\beta \,\, I\_b \alpha R\_{\rm cell} \,\, / \,\, \mathbf{G}\_{\rm th} \left( 1 + \alpha^2 \tau\_{\rm th} \right)^{1/2} \tag{7}$$

$$R\_v = \eta \parallel I\_b \alpha R\_{\text{cell}} \slash \ G\_{\text{th}} \tag{8}$$

For unmodulated radiation, ω = 0, Eq. 7 is simplified in Eq. 8, which is the DC responsivity. When the microbolometer is voltage biased equations 7 and 8 are transformed to Eq. 9 and Eq. 10 respectively, where *RI* is current responsivity.

$$R\_{\rm l} = \eta \begin{array}{c} \beta \; \; V\_b \alpha \; \; \; \; \; \; \mathbf{G}\_{\rm th} R\_{\rm cell} \left( \mathbf{1} + o \nu^2 \tau\_{\rm th} \right)^{1/2} \end{array} \tag{9}$$

$$R\_l = \eta \; \not\; \mathcal{V}\_b \alpha \; \; \; \not\; \mathcal{G}\_{\text{th}} \; R\_{\text{cell}} \tag{10}$$

#### **3.3 Noise in microbolometers**

There are four main sources of noise in microbolometers (P. W. Kruse, 2001), which are Johnson noise, 1/f noise, temperature fluctuation noise and background fluctuation noise, these noise types are uncorrelated and are described in the following subsections.

#### **3.3.1 Johnson noise**

The Johnson noise component, *Vj*, is described by Eq. 11, where *k* is the Boltzmann constant, *Tcell* is the bolometer temperature, *Rcell* is the bolometer resistance and Δ*f* is the bandwidth of the integration time.

$$V\_j = \left(4k \ T\_{\rm cell} R\_{\rm cell} \Delta \mathbf{f}\right)^{1/2} \tag{11}$$

#### **3.3.2 1/f noise**

The 1/f noise is characterized by a spectrum that depends inversely on frequency and is described by Eq. 12, where *V* is the product of the bias current - *Ib* and the electrical resistance of the microbolometer - *Rcell*, *f* is the frequency at which the noise is measured and *n* is the 1/f noise parameter, which depend on the material detector.

Un-Cooled Microbolometers with Amorphous

it also has a high undesirable resistivity.

**4.1 Films preparation for characterization** 

following values: QGeH4 =25, 50 and 75 sccm.

**Gases flow rates (sccm)** 

**Dilution ratio (%): \_\_\_\_\_\_\_H2\_\_\_\_\_ GeH4+SiH4+B2H6**

deposition parameters for the 4 thermo-sensing films.

content Xg = 0.5. The film was labeled as process A.

**alloys (a-GexSiyBz:H)** 

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 31

**4. Amorphous germanium-silicon (a-GexSiy:H) and germanium-silicon-boron** 

Intrinsic amorphous silicon (a-Si:H) prepared by PECVD is a very attractive material to be used in microbolometers as thermo-sensing film. It has a high activation energy, Ea ≈ 0.8 - 1 eV and high value of temperature coefficient of resistance, TCR, α(T) ≈0.1 - 0.13 K-1, however

Amorphous germanium-silicon (a-GexSiy:H) films deposited by PECVD have been studied as thermo-sensing film in microbolometers (R. Ambrosio, 2004; A. Kosarev, 2006; A. Torres, 2008; M. Moreno, 2007, 2008, 2010), due its high activation energy and consequently high TCR, and its relatively high room temperature conductivity, σRT, in comparison with a-Si:H films. In this section is presented a description of the deposition by PECVD of intrinsic amorphous germanium-silicon (a-GexSiy:H) and amorphous germanium-silicon-boron (a-

An intrinsic film (a-GexSiy:H) was deposited in a capacitive discharge low frequency (LF) PECVD reactor at frequency *f* = 110 KHz, substrate temperature Ts = 300 oC, pressure *P* = 0.6 Torr and RF power *W* = 350 W, with a gas mixture of SiH4, GeH4 and H2 and gas flow rates of QSiH4=25 sccm, QGeH4 =25 sccm and QH2=1000 sccm respectively. This result in a Ge gas

The a-GexSiyBz:H films were also deposited in a capacitive discharge low frequency (LF) PECVD reactor at frequency *f* = 110 KHz, substrate temperature Ts = 300 oC, pressure *P* = 0.6 Torr and RF power *W* = 350 W. Three sets of films were deposited from SiH4 (100%), GeH4 (100%) and B2H6 (1% on H2) gas mixture, with a fixed SiH4 and B2H6 gas flow rates: QSiH4=50sccm and QB2H6=500 sccm, respectively, while the GeH4 gas flow was set at the

The late resulted in a Ge gas content Xg= 0.3, 0.45, 0.55 and a B gas content Zg= 0.11, 0.09, 0.07 in the samples labeled as process number B, C and D, respectively. Table 2 shows the

**(intrinsic) Process B Process C Process D** 

20 6.2 4.7 3.8

SiH4 (100%): 50 GeH4(100%): 50 B2H6 (1%): 500

SiH4 (100%): 50 GeH4(100%): 75 B2H6 (1%): 500

SiH4 (100%): 50 GeH4(100%): 25 B2H6 (1%): 500

**Process A** 

SiH4(100%): 25 GeH4(100%):25 H2: 1000

Table 2. Deposition parameters of a-GexSiy:H and a-GexSiyBz:H films.

**Ge contentin gas mixture (%)** 50 30 45 55 **B contentin gas mixture (%)** ---- 11 9 7 **Temperature (°C)** 300°C 300°C 300°C 300°C **Pressure (Torr.)** 0.6 0.6 0.6 0.6 **Frequency (Khz.)** 110 110 110 110 **Power (W)** 300 300 300 300

GexSiyBz:H) thin films, and its electrical and compositional characterization.

$$V\_{1/f} = \left(V^2 n \;/\; f\right)^{1/2} \tag{12}$$

1/f noise is the dominant noise at low frequencies and falls below the Johnson noise at higher frequencies, the transition is commonly called the "knee".

#### **3.3.3 Temperature fluctuation noise**

A thermal detector which is in contact with its environment (by conduction and radiation), exhibits random fluctuations in temperature, since the interchange of heat with its surrounding has a statistical nature; this is known as temperature fluctuation noise. The mean square temperature fluctuation noise voltage is given by Eq. 13 (P. W. Kruse, 2001).

$$\left| \mathbf{V}\_{\rm TF} \right|^2 = \left( 4 \mathbf{k} \mathbf{T}\_{\rm cell} \,^2 \Delta \mathbf{f} \; / \,\, \mathbf{G} \left( \mathbf{1} + \boldsymbol{\alpha}^2 \boldsymbol{\tau}\_{\rm th} \right)^2 \right) \mathbf{V}^2 \boldsymbol{\alpha}^2 \tag{13}$$

#### **3.3.4 Background fluctuation noise**

When the heat exchange by conduction between the detector and its surroundings is negligible, in comparison with the radiation exchange, the temperature fluctuation noise will be identified as background fluctuation noise.

The mean square background fluctuation noise is given by Eq. 14, where Tcell is the detector temperature and *TB* is the background temperature.

$$\left|V\_{\rm BF}\right|^2 = \left|8\left|A\_{\rm cell}\eta\right|\sigma\left|k\left(T\_{\rm cell}{}^{\rm S} + T\_{\rm B}{}^{\rm S}\right)\right|R\_{\rm cell}\right|^2\tag{14}$$

The total noise voltage is obtained by adding the 4 noise contributions as is shown in Eq. 15.

$$\left|V\_N\right|^2 = \left|V\_f^2 + \left|V\_{1/f}\right|^2 + \left|V\_{\text{TF}}\right|^2 + \left|V\_{\text{BF}}\right|^2\tag{15}$$

#### **3.4 Detectivity**

Detectivity, D\* (expressed in cmHz1/2Watt-1), is a figure of merit for all types of detectors, it is defined as the pixel output signal to noise ratio per unit of incident radiant power falling on the detector, measured in a 1 Hz bandwidth. In other words, D\* is the normalized signal to noise ratio in the detector and is shown in Eq. 16.

$$D^{\ast \ast} = \left( R\_V \left( A\_{\text{cell}} \Delta\_f \right)^{1/2} \right) \; / \; V\_N \tag{16}$$

In Eq. 16 *Rv* is the voltage responsivity, *Acell* is the detector area, Δ*f* is the frequency bandwidth and *VN* is the contribution of the four noises. It is clear that in order to achieve a high D\* the responsivity should be as high as possible and the noise as small as possible.

The fundamental limit to sensitivity of any thermal detector is set by random fluctuations in the temperature of the detector due to fluctuations in the radiant power exchange between the detector and its surroundings. The highest possible value of D\* of a thermal detector operated at room temperature is D\* = 1.98 x1010 cmHz1/2W-1(A. Rogalski, 2003).

1/f noise is the dominant noise at low frequencies and falls below the Johnson noise at

A thermal detector which is in contact with its environment (by conduction and radiation), exhibits random fluctuations in temperature, since the interchange of heat with its surrounding has a statistical nature; this is known as temperature fluctuation noise. The mean square temperature fluctuation noise voltage is given by Eq. 13 (P. W. Kruse, 2001).

1/2 <sup>2</sup> <sup>2</sup> 2 2 22 V 4kT f / G 1 TF cell th

When the heat exchange by conduction between the detector and its surroundings is negligible, in comparison with the radiation exchange, the temperature fluctuation noise

The mean square background fluctuation noise is given by Eq. 14, where Tcell is the detector

 <sup>2</sup> 55 2 8 *V A kT T R BF cell* 

The total noise voltage is obtained by adding the 4 noise contributions as is shown in Eq. 15.

22 2 2 2

Detectivity, D\* (expressed in cmHz1/2Watt-1), is a figure of merit for all types of detectors, it is defined as the pixel output signal to noise ratio per unit of incident radiant power falling on the detector, measured in a 1 Hz bandwidth. In other words, D\* is the normalized signal

> 1 2/ \* / *D RA V V cell <sup>f</sup> <sup>N</sup>*

In Eq. 16 *Rv* is the voltage responsivity, *Acell* is the detector area, Δ*f* is the frequency bandwidth and *VN* is the contribution of the four noises. It is clear that in order to achieve a high D\* the responsivity should be as high as possible and the noise as small as possible.

The fundamental limit to sensitivity of any thermal detector is set by random fluctuations in the temperature of the detector due to fluctuations in the radiant power exchange between the detector and its surroundings. The highest possible value of D\* of a thermal detector

operated at room temperature is D\* = 1.98 x1010 cmHz1/2W-1(A. Rogalski, 2003).

<sup>V</sup>

 

1

higher frequencies, the transition is commonly called the "knee".

**3.3.3 Temperature fluctuation noise** 

**3.3.4 Background fluctuation noise** 

**3.4 Detectivity** 

will be identified as background fluctuation noise.

temperature and *TB* is the background temperature.

to noise ratio in the detector and is shown in Eq. 16.

<sup>2</sup>

1/2

/ / *V Vn f <sup>f</sup>* (12)

 

*cell B cell* (14)

<sup>1</sup>/ *<sup>N</sup> V Vj V V V <sup>f</sup> TF BF* (15)

(16)

(13)

## **4. Amorphous germanium-silicon (a-GexSiy:H) and germanium-silicon-boron alloys (a-GexSiyBz:H)**

Intrinsic amorphous silicon (a-Si:H) prepared by PECVD is a very attractive material to be used in microbolometers as thermo-sensing film. It has a high activation energy, Ea ≈ 0.8 - 1 eV and high value of temperature coefficient of resistance, TCR, α(T) ≈0.1 - 0.13 K-1, however it also has a high undesirable resistivity.

Amorphous germanium-silicon (a-GexSiy:H) films deposited by PECVD have been studied as thermo-sensing film in microbolometers (R. Ambrosio, 2004; A. Kosarev, 2006; A. Torres, 2008; M. Moreno, 2007, 2008, 2010), due its high activation energy and consequently high TCR, and its relatively high room temperature conductivity, σRT, in comparison with a-Si:H films. In this section is presented a description of the deposition by PECVD of intrinsic amorphous germanium-silicon (a-GexSiy:H) and amorphous germanium-silicon-boron (a-GexSiyBz:H) thin films, and its electrical and compositional characterization.

## **4.1 Films preparation for characterization**

An intrinsic film (a-GexSiy:H) was deposited in a capacitive discharge low frequency (LF) PECVD reactor at frequency *f* = 110 KHz, substrate temperature Ts = 300 oC, pressure *P* = 0.6 Torr and RF power *W* = 350 W, with a gas mixture of SiH4, GeH4 and H2 and gas flow rates of QSiH4=25 sccm, QGeH4 =25 sccm and QH2=1000 sccm respectively. This result in a Ge gas content Xg = 0.5. The film was labeled as process A.

The a-GexSiyBz:H films were also deposited in a capacitive discharge low frequency (LF) PECVD reactor at frequency *f* = 110 KHz, substrate temperature Ts = 300 oC, pressure *P* = 0.6 Torr and RF power *W* = 350 W. Three sets of films were deposited from SiH4 (100%), GeH4 (100%) and B2H6 (1% on H2) gas mixture, with a fixed SiH4 and B2H6 gas flow rates: QSiH4=50sccm and QB2H6=500 sccm, respectively, while the GeH4 gas flow was set at the following values: QGeH4 =25, 50 and 75 sccm.

The late resulted in a Ge gas content Xg= 0.3, 0.45, 0.55 and a B gas content Zg= 0.11, 0.09, 0.07 in the samples labeled as process number B, C and D, respectively. Table 2 shows the deposition parameters for the 4 thermo-sensing films.


Table 2. Deposition parameters of a-GexSiy:H and a-GexSiyBz:H films.

Un-Cooled Microbolometers with Amorphous

(process: A, B, C and D).

samples in comparison with that of the stripes samples.

bridges samples for the different thermo-sensing films.

enhance the deposition rate as is shown in Fig. 5 C).

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 33

Fig. 4. Conductivity dependence with temperature for the different thermo-sensing films

The increment in the σ is accompanied with a reduction in the Ea. We obtained an Ea= 0.22 eV (for Gex = 0.3), Ea= 0.21 eV (for Gex = 0.45) and Ea= 0.18 eV (for Gex = 0.55), while in the intrinsic film is Ea= 0.345 eV (for Gex = 0.5). Ea as a function of Gex is shown in Fig. 5 A).

The reduction in the thermo-sensing films dimensions, from the stripes samples (10x1.5 mm2) to the patterned samples (70 x 66 μm2), has no significant effect on Ea, however it has on the σRT. We observed a reduction of above 50-80 % of the σRT value in the patterned

Practically no change in Ea of the thermo-sensing films deposited over a SiNx micro-bridge was observed, in comparison with that of the stripes and patterned samples; however the micro-bridge samples showed a larger reduction in the σRT values, of 60-90 %. The dependence of σRT with the Gex content and the sample structure are shown in Fig. 5 B), while the deposition rate dependence of Gex content in the thermo-sensing films is shown in Fig. 5 C). Table 3 show a comparison of Ea, TCR, σRT and σ0 in stripes, patterned and micro-

The micro-bridges samples have the largest reduction of conductivity, and it could be explained by the stress arisen in the SiNx micro-bridge, affecting the thermo-sensing film electrical conductivity. The deposition rate in the boron alloys is around 2 -3 times larger than that of the intrinsic film. Boron incorporation during the thermo-sensing deposition,

Since those films are studied for applications as thermo-sensing films for microbolometers, we measured the film electrical properties after patterning them with photolithography in one cell of dimensions 70 x 66 μm2.

Assuming that stress arisen in the film deposited over a SiNx micro-bridge could have an effect on the film conductivity, we also studied the films deposited on a micro-bridge. For that purpose, we prepared three different kinds of samples for each type of the four thermosensing films (three boron alloys with different Ge content and the intrinsic film). The films were prepared as is shown in Fig. 3.

Fig. 3. Different thermo-sensing films samples. A) Stripes, B) pattern and C) Micro-bridge.

#### **4.2 Temperature dependence of conductivity and TCR in a-GexSiy:H and a-GexSiyBz:H films**

We performed measurements of temperature dependence of conductivity σ(T) in the a-GexSiy:H and a-GexSiyBz:H thermo-sensing films in the range of T= 300–400 K. The measurements were performed in a vacuum chamber at a pressure P≈20 mTorrs. A temperature controller (model K-20, MMR Inst.) for the temperature measurement control and an electrometer (model 6517-A, Keithley Inst.) for the current measurements were employed. These measurements allowed us to obtain the σ(T) temperature dependence and then to determine the Ea, the TCR and the room temperature conductivity, σRT.

The conductivity temperature dependence can be well described by σ(T)=σ0 exp(-Ea/*k*T), where σ0 is the prefactor, Ea is the activation energy, *k* is the Boltzmann constant and T is the temperature. Fig. 4 shows σ(T) curves for four different thermo-sensing films (three boron alloys with different Ge gas content, Gex = 0.3, 0.45, 0.55 and the intrinsic film with Gex = 0.5), fabricated in three different sample configurations (stripes, patterns and micro-bridges).

From σ(T) measurements with temperature in the thermo-sensing films, we found that the boron alloys (a-GexSiyBz:H) have a significantly larger conductivity (by about 2-3 orders of magnitude) in comparison with that of the intrinsic film (a-GexSiy:H). We observed that an increment in the Ge content in gas phase in the boron alloys results in an increase of the room temperature conductivity, from σRT = 2.8 x10-3 (Ωcm)-1 (for Gex = 0.3) to σRT = 1 x10-2 (Ωcm)-1 (for Gex = 0.45) and σRT = 2.5 x10-2 (Ωcm)-1 (for Gex = 0.55), while for the intrinsic film the room temperature conductivity is σRT = 6 x10-5 (Ωcm)-1 (for Gex = 0.5).

Since those films are studied for applications as thermo-sensing films for microbolometers, we measured the film electrical properties after patterning them with photolithography in

Assuming that stress arisen in the film deposited over a SiNx micro-bridge could have an effect on the film conductivity, we also studied the films deposited on a micro-bridge. For that purpose, we prepared three different kinds of samples for each type of the four thermosensing films (three boron alloys with different Ge content and the intrinsic film). The films

A) Stripes sample B) Patterned sample C) Micro-bridge sample

then to determine the Ea, the TCR and the room temperature conductivity, σRT.

the room temperature conductivity is σRT = 6 x10-5 (Ωcm)-1 (for Gex = 0.5).

Fig. 3. Different thermo-sensing films samples. A) Stripes, B) pattern and C) Micro-bridge.

**4.2 Temperature dependence of conductivity and TCR in a-GexSiy:H and a-GexSiyBz:H** 

We performed measurements of temperature dependence of conductivity σ(T) in the a-GexSiy:H and a-GexSiyBz:H thermo-sensing films in the range of T= 300–400 K. The measurements were performed in a vacuum chamber at a pressure P≈20 mTorrs. A temperature controller (model K-20, MMR Inst.) for the temperature measurement control and an electrometer (model 6517-A, Keithley Inst.) for the current measurements were employed. These measurements allowed us to obtain the σ(T) temperature dependence and

The conductivity temperature dependence can be well described by σ(T)=σ0 exp(-Ea/*k*T), where σ0 is the prefactor, Ea is the activation energy, *k* is the Boltzmann constant and T is the temperature. Fig. 4 shows σ(T) curves for four different thermo-sensing films (three boron alloys with different Ge gas content, Gex = 0.3, 0.45, 0.55 and the intrinsic film with Gex = 0.5), fabricated in three different sample configurations (stripes, patterns and micro-bridges).

From σ(T) measurements with temperature in the thermo-sensing films, we found that the boron alloys (a-GexSiyBz:H) have a significantly larger conductivity (by about 2-3 orders of magnitude) in comparison with that of the intrinsic film (a-GexSiy:H). We observed that an increment in the Ge content in gas phase in the boron alloys results in an increase of the room temperature conductivity, from σRT = 2.8 x10-3 (Ωcm)-1 (for Gex = 0.3) to σRT = 1 x10-2 (Ωcm)-1 (for Gex = 0.45) and σRT = 2.5 x10-2 (Ωcm)-1 (for Gex = 0.55), while for the intrinsic film

one cell of dimensions 70 x 66 μm2.

were prepared as is shown in Fig. 3.

**films** 

Fig. 4. Conductivity dependence with temperature for the different thermo-sensing films (process: A, B, C and D).

The increment in the σ is accompanied with a reduction in the Ea. We obtained an Ea= 0.22 eV (for Gex = 0.3), Ea= 0.21 eV (for Gex = 0.45) and Ea= 0.18 eV (for Gex = 0.55), while in the intrinsic film is Ea= 0.345 eV (for Gex = 0.5). Ea as a function of Gex is shown in Fig. 5 A).

The reduction in the thermo-sensing films dimensions, from the stripes samples (10x1.5 mm2) to the patterned samples (70 x 66 μm2), has no significant effect on Ea, however it has on the σRT. We observed a reduction of above 50-80 % of the σRT value in the patterned samples in comparison with that of the stripes samples.

Practically no change in Ea of the thermo-sensing films deposited over a SiNx micro-bridge was observed, in comparison with that of the stripes and patterned samples; however the micro-bridge samples showed a larger reduction in the σRT values, of 60-90 %. The dependence of σRT with the Gex content and the sample structure are shown in Fig. 5 B), while the deposition rate dependence of Gex content in the thermo-sensing films is shown in Fig. 5 C). Table 3 show a comparison of Ea, TCR, σRT and σ0 in stripes, patterned and microbridges samples for the different thermo-sensing films.

The micro-bridges samples have the largest reduction of conductivity, and it could be explained by the stress arisen in the SiNx micro-bridge, affecting the thermo-sensing film electrical conductivity. The deposition rate in the boron alloys is around 2 -3 times larger than that of the intrinsic film. Boron incorporation during the thermo-sensing deposition, enhance the deposition rate as is shown in Fig. 5 C).

Un-Cooled Microbolometers with Amorphous

dominant in the a-GexSiyBz:H films .

content. Those results are shown in Table 4.

profiles obtained.

**Stripes samples** 

**Patterned samples** 

**Micro-bridge samples** 

for the different thermo-sensing films.

**4.3 Composition of the a-GexSiy:H and a-GexSiyBz:H films** 

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 35

vary just between 0.07 and 0.11. Thus the effect of the variation of the Ge gas content on Ea is

In Figure 5 the showed results are related to the Gex, Siy, and Bz gas contents, not to solid contents. There exists a significant difference between the gas content used for the films deposition, and the solid content in the films produced. The composition in solid phase of the different films (three boron alloys with different Ge gas content and the intrinsic film) was characterized by secondary ion mass spectroscopy (SIMS). The samples used for SIMS characterization were the stripes samples described in section 4.1. Fig. 6 shows the SIMS

From SIMS profiles we calculated the solid composition in the thermo-sensing films. For the film with gas content: Gex=0.3 and Bz=0.11 (process B), we observed an increase in the solid content: Gex=0.59 and Bz=0.32 respectively. For the film with Gex=0.45 and Bz=0.09 (process C), we observed Gex=0.67 and Bz=0.26, respectively. For the film with Gex=0.55 and Bz=0.07 (process D), we observed Gex=0.71 and Bz=0.23, respectively. These results suggested a strong preferential B and Ge incorporation from gas phase during the film deposition process. The Bz solid content demonstrated values about 3 times larger than the content in gas phase Bz, while the Gex solid content increased by a factor of 1.3-2 from the Gex gas

**Film Thickness (μm)** 0.5 0.36 0.42 0.51 **Deposition rate (A/s)** 2.8 6 7 9.5

Table 3. Comparison of Ea, TCR, σRT and σ0 in stripes, patterned and micro-bridges samples

In Fig. 6 the intrinsic film has a Boron content of 1018 cm-3 (which represents a B solid content of 2x10-3 %) as is shown in table 4. The reason of the above is the fact that all the films were deposited on the same chamber. Even though, the chamber was extensively cleaned and coated with a SiNx film before the intrinsic film deposition, Boron impurities

remained in the chamber walls, which were re-deposited in the intrinsic films.

**Ea (eV) 0.37** 

**Thermo-sensing films Process A Process B Process C Process D**

**0.22 0.20** 

**Ea (eV) 0.345 0.22 0.21 0.18 TCR (K-1)** -0.044 -0.028 -0.027 -0.023 **σRT (Ωcm)-1 6x10-5 2.8x10-3 1x10-2 2.5x10-2 σ0 (Ωcm)-1** 34.85 12.02 36.46 24.55

**Ea (eV) 0.36 0.225 0.20 0.20 TCR (K-1)** -0.046 -0.029 -0.025 -0.025 **σRT (Ωcm)-1 1.08x10-5 1.4x10-3 4x10-3 1.2x10-2 σ0 (Ωcm)-1** 11.13 7.27 8.23 28.26

**Not available** 

**TCR (K-1)** -0.047 -0.028 -0.025 **σRT (Ωcm)-1 2.2x10-5 1.2x10-3 7x10-3 σ0 (Ωcm)-1** 32.8 5.94 15.58

Fig. 5. Characterization of a-GexSiy:H and a-GexSiyBz:H films. A) Ea as function of Ge gas content (Gex). B) Conductivity as a function of Ge gas content. C) Deposition rate as a function of Ge gas content.

It is important to point out that, doping on amorphous semiconductors reduce Ea and increases the films conductivity (σRT). In Fig 5A) for reference, is shown an intrinsic a-GexSiy:H film produced with a gas content of Gex=50% and Siy=50%, which has a Ea of 0.34 eV. This is the largest value for a-GexSiy:H films (doped or un-doped, using a gas content of Gex=50% and Siy=50%).

When boron is introduced in the film deposition, Ea is reduced and the conductivity is increased in the films. In fig. 5 A) is shown that Ea is reduced to values in the range of 0.18 - 0.22 eV, while the conductivity is increased in more than one order of magnitude. Also it is important to notice that a-GexSiy:H films have an intermediate Ea value, between a-Si:H and a-Ge:H. Intrinsic a-Si:H has Ea values close to 1 eV, while a-Ge:H have Ea values of above 0.3 eV. Thus, varying the Ge (and Si) gas contents in the a-GexSiy:H films, it is possible to modify Ea (an also the conductivity) on intrinsic films.

Larger Gex content in the films will reduce the value of Ea. In fig 5 A), we observe a decrement on Ea of the a-GexSiyBz:H films, not just because the Bz gas content (which in fact decreases), but because the Ge content (which increases). In fig 5 A) is shown that for a-GexSiyBz:H films, the Gex gas content vary between 0.3 and 0.55, while the Bz gas content

Fig. 5. Characterization of a-GexSiy:H and a-GexSiyBz:H films. A) Ea as function of Ge gas content (Gex). B) Conductivity as a function of Ge gas content. C) Deposition rate as a

It is important to point out that, doping on amorphous semiconductors reduce Ea and increases the films conductivity (σRT). In Fig 5A) for reference, is shown an intrinsic a-GexSiy:H film produced with a gas content of Gex=50% and Siy=50%, which has a Ea of 0.34 eV. This is the largest value for a-GexSiy:H films (doped or un-doped, using a gas content of

When boron is introduced in the film deposition, Ea is reduced and the conductivity is increased in the films. In fig. 5 A) is shown that Ea is reduced to values in the range of 0.18 - 0.22 eV, while the conductivity is increased in more than one order of magnitude. Also it is important to notice that a-GexSiy:H films have an intermediate Ea value, between a-Si:H and a-Ge:H. Intrinsic a-Si:H has Ea values close to 1 eV, while a-Ge:H have Ea values of above 0.3 eV. Thus, varying the Ge (and Si) gas contents in the a-GexSiy:H films, it is possible to

Larger Gex content in the films will reduce the value of Ea. In fig 5 A), we observe a decrement on Ea of the a-GexSiyBz:H films, not just because the Bz gas content (which in fact decreases), but because the Ge content (which increases). In fig 5 A) is shown that for a-GexSiyBz:H films, the Gex gas content vary between 0.3 and 0.55, while the Bz gas content

function of Ge gas content.

Gex=50% and Siy=50%).

modify Ea (an also the conductivity) on intrinsic films.

vary just between 0.07 and 0.11. Thus the effect of the variation of the Ge gas content on Ea is dominant in the a-GexSiyBz:H films .

## **4.3 Composition of the a-GexSiy:H and a-GexSiyBz:H films**

In Figure 5 the showed results are related to the Gex, Siy, and Bz gas contents, not to solid contents. There exists a significant difference between the gas content used for the films deposition, and the solid content in the films produced. The composition in solid phase of the different films (three boron alloys with different Ge gas content and the intrinsic film) was characterized by secondary ion mass spectroscopy (SIMS). The samples used for SIMS characterization were the stripes samples described in section 4.1. Fig. 6 shows the SIMS profiles obtained.

From SIMS profiles we calculated the solid composition in the thermo-sensing films. For the film with gas content: Gex=0.3 and Bz=0.11 (process B), we observed an increase in the solid content: Gex=0.59 and Bz=0.32 respectively. For the film with Gex=0.45 and Bz=0.09 (process C), we observed Gex=0.67 and Bz=0.26, respectively. For the film with Gex=0.55 and Bz=0.07 (process D), we observed Gex=0.71 and Bz=0.23, respectively. These results suggested a strong preferential B and Ge incorporation from gas phase during the film deposition process. The Bz solid content demonstrated values about 3 times larger than the content in gas phase Bz, while the Gex solid content increased by a factor of 1.3-2 from the Gex gas content. Those results are shown in Table 4.


Table 3. Comparison of Ea, TCR, σRT and σ0 in stripes, patterned and micro-bridges samples for the different thermo-sensing films.

In Fig. 6 the intrinsic film has a Boron content of 1018 cm-3 (which represents a B solid content of 2x10-3 %) as is shown in table 4. The reason of the above is the fact that all the films were deposited on the same chamber. Even though, the chamber was extensively cleaned and coated with a SiNx film before the intrinsic film deposition, Boron impurities remained in the chamber walls, which were re-deposited in the intrinsic films.

Un-Cooled Microbolometers with Amorphous

Those values were obtained by SIMS measurements.

etching.

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 37

The fabrication process of the planar structure microbolometer with the a-GexSiy:H thermosensing film is as follows. A 0.2 μm-thick SiO2 layer is deposited by CVD on a c-Si wafer and a 2.5 m-thick sacrificial aluminum layer is deposited by e-beam evaporation and patterned. A 0.8 m-thick SiNx film is then deposited at low temperature (350 oC) by low frequency PECVD over the aluminum sacrificial film. The SiNx film is patterned by reactive ion etching (RIE) in order to form a SiNx bridge. A 0.2 μm-thick titanium contacts are deposited by ebeam evaporation over the SiNx bridge and a 0.5 m-thick thermo-sensing a-GexSiy:H film is deposited over the Ti contacts by low frequency LF PECVD technique at a rf frequency f=110 kHz, temperature T=300 oC, power W=350 W and pressure P=0.6 Torr. The a-GexSiy:H film is deposited from a SiH4 + GeH4 + H2 mixture with gas flows: QSiH4=25sccm, QGeH4 =25 sccm, QH2=1000 sccm. This results in a Ge content in solid phase Y=0.88 and a Si content in solid phase Y=0.11. The thermo-sensing film is covered with a 0.2 m-thick absorbing SiNx film deposited by PECVD and finally the aluminum sacrificial layer is removed with wet

The planar structure microbolometer with the boron alloy (a-GexBySiy:H) thermo-sensing film is fabricated as the previous one, with difference in the thermo-sensing film deposition parameters. The boron alloy film is deposited from a SiH4 + GeH4 + B2H6 + H2 mixture with the following gas flows: QSiH4=50sccm, QGeH4 =50 sccm, QB2H6=5 sccm and QH2=500 sccm. This results in a Ge content in solid phase Gex=0.67 and B content in solid phase By=0.26.

Fig. 7. Microbolometers: A) Planar wit intrinsic film a-GexSiy:H, B) Planar with boron doped film a-GexBySiz:H, C) Sandwich with intrinsic film a-GexSiy:H, D) A device fabricated.

The sandwich structure microbolometer with the a-GexSiy:H film is fabricated in the same way as the planar microbolometer with some differences, due to the placing of metals as

Fig. 6. SIMS profiles of a-GexSiy:H and a-GexSiyBz:H thermo-sensing films.


Table 4. Gas content and solid content obtained by SIMS for the thermo-sensing films.

## **5. Microbolometer configurations and fabrication process flow**

In this section we show a comparative study of the performance characteristics of three configurations of un-cooled microbolometers based on amorphous germanium thin films: a) Planar structure with intrinsic amorphous germanium-silicon a-GexSiy:H thermo-sensing film. In this configuration the metal electrodes are placed under the thermo-sensing film (Fig. 7 A); b) Planar structure with amorphous germanium-boron-silicon alloy a-GexBySiz:H thermo-sensing film (Fig. 7 B) and c) Sandwich structure with intrinsic a-GexSiy:H thermosensing film, this configuration consists of metal electrodes which sandwich the thermosensing film (Fig. 7 C). Fig. 7 D) shows a picture of one device fabricated.

Fig. 6. SIMS profiles of a-GexSiy:H and a-GexSiyBz:H thermo-sensing films.

Table 4. Gas content and solid content obtained by SIMS for the thermo-sensing films.

In this section we show a comparative study of the performance characteristics of three configurations of un-cooled microbolometers based on amorphous germanium thin films: a) Planar structure with intrinsic amorphous germanium-silicon a-GexSiy:H thermo-sensing film. In this configuration the metal electrodes are placed under the thermo-sensing film (Fig. 7 A); b) Planar structure with amorphous germanium-boron-silicon alloy a-GexBySiz:H thermo-sensing film (Fig. 7 B) and c) Sandwich structure with intrinsic a-GexSiy:H thermosensing film, this configuration consists of metal electrodes which sandwich the thermo-

**5. Microbolometer configurations and fabrication process flow** 

sensing film (Fig. 7 C). Fig. 7 D) shows a picture of one device fabricated.

**Gas content** 

**Solid content obtained from SIMS** 

**Thermo-sensing films Process A Process B Process C Process D** 

**Gex (%)** 0.5 0.3 0.45 0.55 **Siy (%)** 0.5 0.59 0.46 0.38 **Bz (%)** 0 0.11 0.09 0.07

**Gex (%)** 0.888 0.59 0.67 0.71 **Siy (%)** 0.110 0.078 0.05 0.04 **Bz (%)** 2.0x10-3 0.32 0.26 0.23 The fabrication process of the planar structure microbolometer with the a-GexSiy:H thermosensing film is as follows. A 0.2 μm-thick SiO2 layer is deposited by CVD on a c-Si wafer and a 2.5 m-thick sacrificial aluminum layer is deposited by e-beam evaporation and patterned. A 0.8 m-thick SiNx film is then deposited at low temperature (350 oC) by low frequency PECVD over the aluminum sacrificial film. The SiNx film is patterned by reactive ion etching (RIE) in order to form a SiNx bridge. A 0.2 μm-thick titanium contacts are deposited by ebeam evaporation over the SiNx bridge and a 0.5 m-thick thermo-sensing a-GexSiy:H film is deposited over the Ti contacts by low frequency LF PECVD technique at a rf frequency f=110 kHz, temperature T=300 oC, power W=350 W and pressure P=0.6 Torr. The a-GexSiy:H film is deposited from a SiH4 + GeH4 + H2 mixture with gas flows: QSiH4=25sccm, QGeH4 =25 sccm, QH2=1000 sccm. This results in a Ge content in solid phase Y=0.88 and a Si content in solid phase Y=0.11. The thermo-sensing film is covered with a 0.2 m-thick absorbing SiNx film deposited by PECVD and finally the aluminum sacrificial layer is removed with wet etching.

The planar structure microbolometer with the boron alloy (a-GexBySiy:H) thermo-sensing film is fabricated as the previous one, with difference in the thermo-sensing film deposition parameters. The boron alloy film is deposited from a SiH4 + GeH4 + B2H6 + H2 mixture with the following gas flows: QSiH4=50sccm, QGeH4 =50 sccm, QB2H6=5 sccm and QH2=500 sccm. This results in a Ge content in solid phase Gex=0.67 and B content in solid phase By=0.26. Those values were obtained by SIMS measurements.

Fig. 7. Microbolometers: A) Planar wit intrinsic film a-GexSiy:H, B) Planar with boron doped film a-GexBySiz:H, C) Sandwich with intrinsic film a-GexSiy:H, D) A device fabricated.

The sandwich structure microbolometer with the a-GexSiy:H film is fabricated in the same way as the planar microbolometer with some differences, due to the placing of metals as

Un-Cooled Microbolometers with Amorphous

measured by an external circuit.

**6. Microbolometers electrical characterization** 

**6.1 I(U) measurements in dark and under Infrared Radiation (IR)** 

determine the microbolometer electrical resistance and responsivity.

responsivity and detectivity in the 3 configurations of microbolometers:

configuration with a-GexSiy:H thermo-sensing film (process A, section 4).

sensing film (process A of section 4).

**6.2 Current and voltage responsivity** 

A of section 4).

thermo-sensing film (process C of section 4).

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 39

A microbolometer is a resistor sensitive to temperature change, its operation is based on the temperature increase of the thermo-sensing film by the absorption of the incident IR radiation. The change in temperature causes a change on its electrical resistance, which is

In this section we present a comparative study of 3 configurations of un-cooled microbolometers based on amorphous silicon-germanium thin films deposited by plasma.

In this section is described the procedure performed in order to obtain the current voltage I(U) characteristics of the microbolometers, from this measurement it is possible to

The current-voltage characteristics I(U) and current noise spectral density (NSD) have been measured in the devices in order to compare the performance characteristics, such as

a. Planar structure with an intrinsic germanium-silicon (a-GexSiy:H, Gex=0.5) thermo-

b. Planar structure with a germanium-silicon-boron alloy (a-GexSiyBz:H, Gex=0.45, Bz=0.09)

c. Sandwich structure with an intrinsic (a-GexSiy:H, Gex=0.5) thermo-sensing film (process

The samples were placed in a vacuum chamber at pressure P20 mTorr, at room temperature and illuminated through a zinc selenide window (ZnSe). The window has a 70% transmission in the range of λ=0.6 – 20 µm. The source of IR light is a SiC globar source, which provides intensity I0=5.3x10-2 W/cm2 in the range of λ=1 – 20 µm. The current was measured with an electrometer ("Keithley"- 6517-A) controlled by a PC in dark and under IR illumination.

Fig. 9 A) shows the current-voltage I(U) characteristics in dark and under IR illumination for the planar configuration with a-GexSiy:H thermo-sensing film (process A, section 4); Fig. 9 B) shows these characteristics for the planar configuration with a-GexSiyBz:H thermo-sensing film (process C, section 4); and Fig. 9 C) shows the same characteristics for the sandwich

In those figures we can see the increment in current due to IR illumination, ∆I=IIR–IDark, where IIR is the current under IR radiation and IDark is the current in dark. The planar configuration with the a-GexSiy:H (Gex=0.5) film has a ∆I = 5.4 nA (at bias voltage U=7 V); the planar configuration with the a-GexSiyBz:H (Gex=0.45, Bz=0.09) film has a ∆I = 65 nA (at bias voltage U=7 V); and the sandwich configuration with the a-GexSiy:H (Gex=0.5) film has a ∆I = 35 μA (at bias voltage U=4 V). The inset in those figures show the Log I(Log U) characteristics, where we

The current responsivity, RI, is described by Eq. 17, where ∆I is the increment in current (∆I=IIR–IDark) and Pincident is the IR incident power in the device surface. Pincident is described

can see their linear behavior. The gamma (γ) constant indicates the slope of the curves.

by Eq. 18 and is the product of the cell area, Acell and the IR source intensity, *I0*.

bottom and top electrodes. In this structure the electrodes sandwich the thermo-sensing film. The bottom Ti electrode is 0.2 μm-thick and is deposited before the thermo-sensing film. Then the a-GexSiy:H film is deposited and it is covered with a top thin electrode (10 nm) forming a sandwich structure. The active area of the thermo-sensing layer in the three configurations studied is Ab=70x66m2. Fig. 8 shows the fabrication process of the microbolometer structures.

Fig. 8. Planar and sandwich microbolometers fabrication process flow.

bottom and top electrodes. In this structure the electrodes sandwich the thermo-sensing film. The bottom Ti electrode is 0.2 μm-thick and is deposited before the thermo-sensing film. Then the a-GexSiy:H film is deposited and it is covered with a top thin electrode (10 nm) forming a sandwich structure. The active area of the thermo-sensing layer in the three configurations studied is Ab=70x66m2. Fig. 8 shows the fabrication process of the

Fig. 8. Planar and sandwich microbolometers fabrication process flow.

microbolometer structures.

## **6. Microbolometers electrical characterization**

A microbolometer is a resistor sensitive to temperature change, its operation is based on the temperature increase of the thermo-sensing film by the absorption of the incident IR radiation. The change in temperature causes a change on its electrical resistance, which is measured by an external circuit.

In this section we present a comparative study of 3 configurations of un-cooled microbolometers based on amorphous silicon-germanium thin films deposited by plasma.

## **6.1 I(U) measurements in dark and under Infrared Radiation (IR)**

In this section is described the procedure performed in order to obtain the current voltage I(U) characteristics of the microbolometers, from this measurement it is possible to determine the microbolometer electrical resistance and responsivity.

The current-voltage characteristics I(U) and current noise spectral density (NSD) have been measured in the devices in order to compare the performance characteristics, such as responsivity and detectivity in the 3 configurations of microbolometers:


The samples were placed in a vacuum chamber at pressure P20 mTorr, at room temperature and illuminated through a zinc selenide window (ZnSe). The window has a 70% transmission in the range of λ=0.6 – 20 µm. The source of IR light is a SiC globar source, which provides intensity I0=5.3x10-2 W/cm2 in the range of λ=1 – 20 µm. The current was measured with an electrometer ("Keithley"- 6517-A) controlled by a PC in dark and under IR illumination.

Fig. 9 A) shows the current-voltage I(U) characteristics in dark and under IR illumination for the planar configuration with a-GexSiy:H thermo-sensing film (process A, section 4); Fig. 9 B) shows these characteristics for the planar configuration with a-GexSiyBz:H thermo-sensing film (process C, section 4); and Fig. 9 C) shows the same characteristics for the sandwich configuration with a-GexSiy:H thermo-sensing film (process A, section 4).

In those figures we can see the increment in current due to IR illumination, ∆I=IIR–IDark, where IIR is the current under IR radiation and IDark is the current in dark. The planar configuration with the a-GexSiy:H (Gex=0.5) film has a ∆I = 5.4 nA (at bias voltage U=7 V); the planar configuration with the a-GexSiyBz:H (Gex=0.45, Bz=0.09) film has a ∆I = 65 nA (at bias voltage U=7 V); and the sandwich configuration with the a-GexSiy:H (Gex=0.5) film has a ∆I = 35 μA (at bias voltage U=4 V). The inset in those figures show the Log I(Log U) characteristics, where we can see their linear behavior. The gamma (γ) constant indicates the slope of the curves.

## **6.2 Current and voltage responsivity**

The current responsivity, RI, is described by Eq. 17, where ∆I is the increment in current (∆I=IIR–IDark) and Pincident is the IR incident power in the device surface. Pincident is described by Eq. 18 and is the product of the cell area, Acell and the IR source intensity, *I0*.

Un-Cooled Microbolometers with Amorphous

with the a-GexSiy:H (Gex=0.5) film.

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 41

The planar and sandwich structures with the intrinsic film show larger values of relative current responsivity. The voltage responsivity, RU, was calculated from the experimental I(U) points, the increment in voltage from dark condition to IR condition was obtained from a fixed current. Fig. 11 A) shows a ∆U= 1.8 V extracted from a fixed current I = 1.5x10-8 A, in the planar structure microbolometer with the a-GexSiy:H (Gex=0.5) film. Fig. 11 B) shows a ∆U= 0.3 V extracted from a fixed current I = 1.35x10-6 A, in the planar structure microbolometer with the a-GexSiyBZ:H (Gex=0.45, Bz=0.09) film. Fig. 11 C) shows a ∆U= 0.54 V extracted from a fixed current I = 1.16x10-4 A, in the sandwich structure microbolometer

> Planar structureWith a-GexSiy:H

Current responsivity (AW-1) 2x10-3 3x10-2 14

Voltage Responsivity (VW-1) 7.2x105 1.2x105 2.2x105 Table 5. Current and voltage responsivity values for 3 microbolometer configurations.

Film process A C A ∆I= IIR – Idark (A) 5.4 x10-9 (at U=7 V) 65x10-9 (at U=7 V) 35x10-6 (at U=4 V)

Fig. 10. Voltage dependence of RI of 3 microbolometers: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-GexSiy:H (Gex=0.5).

∆U= UIR – Udark (V) 1.8 (at I=1.5x10-8) 0.3 (at I=1.35x10-6) 0.54 (at I=1.16x10-4)

Planar structureWith a-GexSiyBz:H

Sandwich structureWith a-GexSiy:H

$$\mathbf{R}\_{\mathrm{I}} = \,\,\Delta\mathrm{I} \,\,\, \Big/\,\, \mathrm{P}\_{\mathrm{incident}} \tag{17}$$

$$\mathbf{P}\_{\text{incident}} = \mathbf{A}\_{\text{cell}} \mathbf{I}\_0 \tag{18}$$

The intensity of the IR source is I0 = 0.053 Wcm-2, while the cell area is Acell = (70x10-4)(66x10- 4) cm2 = 4.6x10-5 cm2. Therefore the IR incident power in the device surface is Pincident = 2.475x10-6 W. The planar microbolometer with a-GexSiy:H (Gex=0.5) film has a RI=2x10-3 A/W (at U=7 V); the planar microbolometer with a-GexSiyBz:H (Gex=0.45, Bz=0.09) film has a RI= 3x10-2 A/W (at U=7 V); and the sandwich microbolometer with a-GexSiy:H (Gex=0.5) film has a RI= 14 A/W (at U=4 V).

Table 5 shows the ∆I and RI values obtained in the configurations. Fig. 10 A) shows the voltage dependence of RI for the planar microbolometer with a-GexSiy:H (Gex=0.5) film; Fig. 10 B) shows the voltage dependence of RI for the planar microbolometer with a-GexSiyBZ:H (Gex=0.45, Bz=0.09) film; and Fig. 10 C) shows the voltage dependence of RI for the sandwich microbolometer with a-GexSiy:H (Gex=0.5) film. The insert in those figures show a relative current responsivity. Relative current responsivity is the ratio between the increment of current from dark to IR condition, ΔRI, and the microbolometer resistance Rcell.

Fig. 9. I(U) characteristics of 3 microbolometers: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-GexSiy:H (Gex=0.5). The inset in those figures show the Log I(Log U) characteristics, where we can see their linear behavior. The gamma (γ) constant indicates the slope of the curves.

The intensity of the IR source is I0 = 0.053 Wcm-2, while the cell area is Acell = (70x10-4)(66x10- 4) cm2 = 4.6x10-5 cm2. Therefore the IR incident power in the device surface is Pincident = 2.475x10-6 W. The planar microbolometer with a-GexSiy:H (Gex=0.5) film has a RI=2x10-3 A/W (at U=7 V); the planar microbolometer with a-GexSiyBz:H (Gex=0.45, Bz=0.09) film has a RI= 3x10-2 A/W (at U=7 V); and the sandwich microbolometer with a-GexSiy:H (Gex=0.5)

Table 5 shows the ∆I and RI values obtained in the configurations. Fig. 10 A) shows the voltage dependence of RI for the planar microbolometer with a-GexSiy:H (Gex=0.5) film; Fig. 10 B) shows the voltage dependence of RI for the planar microbolometer with a-GexSiyBZ:H (Gex=0.45, Bz=0.09) film; and Fig. 10 C) shows the voltage dependence of RI for the sandwich microbolometer with a-GexSiy:H (Gex=0.5) film. The insert in those figures show a relative current responsivity. Relative current responsivity is the ratio between the increment of

current from dark to IR condition, ΔRI, and the microbolometer resistance Rcell.

Fig. 9. I(U) characteristics of 3 microbolometers: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-GexSiy:H (Gex=0.5). The inset in those figures show the Log I(Log U) characteristics, where we can see their linear

behavior. The gamma (γ) constant indicates the slope of the curves.

film has a RI= 14 A/W (at U=4 V).

R I / P <sup>I</sup> incident (17)

P AI incident cell <sup>0</sup> (18)

The planar and sandwich structures with the intrinsic film show larger values of relative current responsivity. The voltage responsivity, RU, was calculated from the experimental I(U) points, the increment in voltage from dark condition to IR condition was obtained from a fixed current. Fig. 11 A) shows a ∆U= 1.8 V extracted from a fixed current I = 1.5x10-8 A, in the planar structure microbolometer with the a-GexSiy:H (Gex=0.5) film. Fig. 11 B) shows a ∆U= 0.3 V extracted from a fixed current I = 1.35x10-6 A, in the planar structure microbolometer with the a-GexSiyBZ:H (Gex=0.45, Bz=0.09) film. Fig. 11 C) shows a ∆U= 0.54 V extracted from a fixed current I = 1.16x10-4 A, in the sandwich structure microbolometer with the a-GexSiy:H (Gex=0.5) film.


Table 5. Current and voltage responsivity values for 3 microbolometer configurations.

Fig. 10. Voltage dependence of RI of 3 microbolometers: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-GexSiy:H (Gex=0.5).

Un-Cooled Microbolometers with Amorphous

measurement system.

GexSiy:H (Gex=0.5).

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 43

curves we observed different slopes at different frequencies and different cone frequencies. That data are shown in Table 6, where fc1 is the cone frequency 1, fc2 is the cone frequency

The planar structure with a-GexSiy:H (Gex=0.5) film shows Icell noise (f) ≈ 10-16 AHz-1/2; the planar structure with a-GexSiyBz:H (Gex=0.45, Bz=0.09) film shows Icell noise (f) ≈ 10-14 AHz-1/2;

The procedure for the detectivity calculation is shown in Eq. 19, where RI is the current responsivity, Acell is the detector area, Inoise is the cell NSD and ∆f = 1 is the bandwidth of the

1 2/ ) /1 2 \* / /( *D RA I f I cell noise* (19)

2, β is the slope of the curve in region 1 and γ is the slope of the curve in region 2.

and the sandwich structure with a-GexSiy:H (Gex=0.5) has Icell noise (f) ≈ 10-11 AHz-1/2.

Fig. 12. Spectral density of current noise (NSD) of 3 microbolometers: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-

We calculated the detectivity values D\* in the 3 structures. For the planar structure with the a-GexSiy:H (Gex=0.5) film we obtained D\*= 7x109 cmHz1/2W-1; for the planar structure with the a-GexSiyBz:H (Gex=0.45, Bz=0.09) film it is D\*= 5.9x109 cmHz1/2W-1; and for the sandwich structure microbolometer with the a-GexSiy:H (Gex=0.5) film it is D\*= 4x109 cmHz1/2W-1.

The planar microbolometer with a-GexSiy:H (Gex=0.5) film has a RU=7.2x105 V/W (at I=1.5x10-8 A); the planar microbolometer with a-GexSiyBz:H (Gex=0.45, Bz=0.09) film has a RU= 1.2x105 V/W (at I=1.4x10-6 A); and the sandwich microbolometer with a-GexSiy:H (Gex=0.5) film has a RU= 2.2x105 V/W (at I=1.16x10-4 A). Table 5 shows the ∆U and RU values obtained from the different microbolometers configurations.

Fig. 11. Extraction of ∆U from I(U) characteristics: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-GexSiy:H (Gex=0.5).

#### **6.3 Noise spectral density measurements and detectivity calculations**

Noise measurements in the microbolometers were performed with a lock-in amplifier ("Stanford Research Systems" - SR530). The noise of the system and the total noise (system + cell noise) were measured separately, and a subtraction of the system noise allowed us to obtain the noise of the device. The detectivity was calculated from the responsivity values and noise measurements. The current noise spectral density (NSD), Icell noise (f), of the fabricated devices with the different thermo-sensing films are shown in Fig. 12.

The NSD in the cell is obtained as (Icell noise(f))2 = (Isystem + cell noise(f))2 – (Isystem noise(f))2, where Icell + system noise(f) is the NSD measured at the microbolometer with the measuring system and the Isystem noise(f) is the NSD measured in the system without the microbolometer. In noise

The planar microbolometer with a-GexSiy:H (Gex=0.5) film has a RU=7.2x105 V/W (at I=1.5x10-8 A); the planar microbolometer with a-GexSiyBz:H (Gex=0.45, Bz=0.09) film has a RU= 1.2x105 V/W (at I=1.4x10-6 A); and the sandwich microbolometer with a-GexSiy:H (Gex=0.5) film has a RU= 2.2x105 V/W (at I=1.16x10-4 A). Table 5 shows the ∆U and RU values

Fig. 11. Extraction of ∆U from I(U) characteristics: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-GexSiy:H (Gex=0.5).

Noise measurements in the microbolometers were performed with a lock-in amplifier ("Stanford Research Systems" - SR530). The noise of the system and the total noise (system + cell noise) were measured separately, and a subtraction of the system noise allowed us to obtain the noise of the device. The detectivity was calculated from the responsivity values and noise measurements. The current noise spectral density (NSD), Icell noise (f), of the

The NSD in the cell is obtained as (Icell noise(f))2 = (Isystem + cell noise(f))2 – (Isystem noise(f))2, where Icell + system noise(f) is the NSD measured at the microbolometer with the measuring system and the Isystem noise(f) is the NSD measured in the system without the microbolometer. In noise

**6.3 Noise spectral density measurements and detectivity calculations** 

fabricated devices with the different thermo-sensing films are shown in Fig. 12.

obtained from the different microbolometers configurations.

curves we observed different slopes at different frequencies and different cone frequencies. That data are shown in Table 6, where fc1 is the cone frequency 1, fc2 is the cone frequency 2, β is the slope of the curve in region 1 and γ is the slope of the curve in region 2.

The planar structure with a-GexSiy:H (Gex=0.5) film shows Icell noise (f) ≈ 10-16 AHz-1/2; the planar structure with a-GexSiyBz:H (Gex=0.45, Bz=0.09) film shows Icell noise (f) ≈ 10-14 AHz-1/2; and the sandwich structure with a-GexSiy:H (Gex=0.5) has Icell noise (f) ≈ 10-11 AHz-1/2.

The procedure for the detectivity calculation is shown in Eq. 19, where RI is the current responsivity, Acell is the detector area, Inoise is the cell NSD and ∆f = 1 is the bandwidth of the measurement system.

$$D^{\ast} \, \, \, \, \, \, \, R\_{l} \left( A\_{\rm cell} \right)^{1/2} \, \, \, \, \, \, \, \, \, \, \, \, \, \_{\rm noise} \, \, \, \, \{\, \Delta f^{\rm l} \}^{\rm l/2} \tag{19}$$

Fig. 12. Spectral density of current noise (NSD) of 3 microbolometers: A) planar with a-GexSiy:H (Gex=0.5). B) planar with a-GexSiyBZ:H (Gex=0.45, Bz=0.09). C) sandwich with a-GexSiy:H (Gex=0.5).

We calculated the detectivity values D\* in the 3 structures. For the planar structure with the a-GexSiy:H (Gex=0.5) film we obtained D\*= 7x109 cmHz1/2W-1; for the planar structure with the a-GexSiyBz:H (Gex=0.45, Bz=0.09) film it is D\*= 5.9x109 cmHz1/2W-1; and for the sandwich structure microbolometer with the a-GexSiy:H (Gex=0.5) film it is D\*= 4x109 cmHz1/2W-1.

Un-Cooled Microbolometers with Amorphous

applied to the microbolometer, for each temperature.

structure microbolometer with a-GexSiy:H (Gex=0.5).

Thermal resistance.

literature.

GexSiyBz:H (Gex=0.45, Bz=0.09).

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 45

Fig. 14 A) shows the increment of temperature (ΔT) as a function of the power (P=U\*I)

Fig. 14. A) ΔT vs Power curve of a microbolometer. B) Thermal resistance of a planar

Fig. 15. Microbolometer with a-GexSiyBz:H (Gex=0.45, Bz=0.09). A) Calibration curve. B)

**8. a-GexSiy:H and a-GexSiyBz:H microbolometers compared with literature** 

The results obtained from the study of fabrication and characterization of different microbolometer structures, containing intrinsic a-GexSiy:H films and boron alloys a-GexSiyBz:H, are discussed in the present section and compared with data reported in

The thermal resistance of the microbolometer, Rth, is then obtained as the slope of the increment of temperature in the microbolometer (ΔT) as a function of the power applied to it, for each temperature value. Fig. 14 B) shows the temperature dependence of the thermal resistance (Rth). Fig. 15 A) shows the calibration curve and Fig. 15 B) shows the temperature dependence of the thermal resistance (Rth) of the planar structure microbolometer with a-


Table 6. NSD at different frequency regions in the different microbolometers structures.

## **7. Microbolometers thermal characterization and calibration curve**

In order to estimate the temperature dependence of the thermal resistance of the microbolometers, I(U) measurements were performed in the range from 260 K to 360 K, as is shown in Fig. 13 A), where the bias is plotted as a function of current.

Fig. 13. A) U(I) curves of a planar structure microbolometer with a-GexSiy:H (Gex=0.5). B) Calibration curve of a planar structure microbolometer with a-GexSiy:H (Gex=0.5).

The slope of the linear part of each curve showed in Fig. 13 A) corresponds to the electrical resistance of the microbolometer for each temperature value (in the range of 260 K - 360 K). Once that is obtained the value of the electrical resistance for each value of temperature, it is possible to graph the electrical resistance of the microbolometer as a function of the temperature, also called the calibration curve, as is shown in Fig. 13 B).

The calibration curve is very important because from this curve is possible to calculate an increment in temperature in the microbolometer by measuring a change in its resistance.

The voltage-current curves in Fig. 13 A) have different resistance values as the current increases. The value of the resistance is affected by the temperature. Thus the resistance is calculated for each point of the Voltage-Current curves (obtained at different temperatures, 260, 270, etc.). If the resistance values obtained are compared with the calibration curve, it is possible to extract the increment of temperature (ΔT) for each point.

a-GexSiy:H (Gex=0.5) 0.47 23 1.34 350 10-16

a-GexSiy:H (Gex=0.5) 0.15 5 0.98 30 10-11

Table 6. NSD at different frequency regions in the different microbolometers structures.

In order to estimate the temperature dependence of the thermal resistance of the microbolometers, I(U) measurements were performed in the range from 260 K to 360 K, as is

Fig. 13. A) U(I) curves of a planar structure microbolometer with a-GexSiy:H (Gex=0.5). B)

The slope of the linear part of each curve showed in Fig. 13 A) corresponds to the electrical resistance of the microbolometer for each temperature value (in the range of 260 K - 360 K). Once that is obtained the value of the electrical resistance for each value of temperature, it is possible to graph the electrical resistance of the microbolometer as a function of the

The calibration curve is very important because from this curve is possible to calculate an increment in temperature in the microbolometer by measuring a change in its resistance.

The voltage-current curves in Fig. 13 A) have different resistance values as the current increases. The value of the resistance is affected by the temperature. Thus the resistance is calculated for each point of the Voltage-Current curves (obtained at different temperatures, 260, 270, etc.). If the resistance values obtained are compared with the calibration curve, it is

Calibration curve of a planar structure microbolometer with a-GexSiy:H (Gex=0.5).

temperature, also called the calibration curve, as is shown in Fig. 13 B).

possible to extract the increment of temperature (ΔT) for each point.

**7. Microbolometers thermal characterization and calibration curve** 

shown in Fig. 13 A), where the bias is plotted as a function of current.

a-GexSiyBz:H (Gex=0.45, Bz=0.09) 0.9 2 1.04 100 10-14

Frequency Regions Region no. 1 Region no. 2 Region no. 3 β fc1 (Hz.) γ fc2 (Hz.) Noise level (AHz-1/2)

Samples

Planar structure

Planar structure

Sandwich structure

Fig. 14 A) shows the increment of temperature (ΔT) as a function of the power (P=U\*I) applied to the microbolometer, for each temperature.

Fig. 14. A) ΔT vs Power curve of a microbolometer. B) Thermal resistance of a planar structure microbolometer with a-GexSiy:H (Gex=0.5).

Fig. 15. Microbolometer with a-GexSiyBz:H (Gex=0.45, Bz=0.09). A) Calibration curve. B) Thermal resistance.

The thermal resistance of the microbolometer, Rth, is then obtained as the slope of the increment of temperature in the microbolometer (ΔT) as a function of the power applied to it, for each temperature value. Fig. 14 B) shows the temperature dependence of the thermal resistance (Rth). Fig. 15 A) shows the calibration curve and Fig. 15 B) shows the temperature dependence of the thermal resistance (Rth) of the planar structure microbolometer with a-GexSiyBz:H (Gex=0.45, Bz=0.09).

## **8. a-GexSiy:H and a-GexSiyBz:H microbolometers compared with literature**

The results obtained from the study of fabrication and characterization of different microbolometer structures, containing intrinsic a-GexSiy:H films and boron alloys a-GexSiyBz:H, are discussed in the present section and compared with data reported in literature.

Un-Cooled Microbolometers with Amorphous

devices in any standard Si CMOS fabrication line.

**Thermo sensing film** 

a-Si:H 0.8-

a-GexSiy:H

a-GexSiyBz:H Gex=0.45, Bz=0.09

a-GexSiyBz:H Gex=0.55, Bz=0.07

a-GexSiy:H

**Ea, eV** 

**TCR,**

**K-1**

**Cell area,** 

VOX 0.16 0.021 50 x 50 - 2.5 x

Gex=0.5 0.34 0.043 70 x 66 5x108 7.2x105

Gex=0.5 0.34 0.043 70 x 66 1x105 2.2x105

RU= 106 VW-1. However values of D\* are not reported.

detectivity D\*=6.7 x108 cmHz1/2W-1.

0.21 0.027 70 x 66 1x106 1.2x105

0.20 0.028 70 x 66 3x106 1.8x105

Table 8. Comparison of characteristics of micro-bolometers with literature.

Planar structure microbolometers based on resistive a-Si:H, present high values of TCR, around α=0.1-0.13 K-1, however also have very high values of resistance. Comercial a-Si:H,B based planar structure microbolometers (A. J. Syllaios, 2000) have moderated values of TCR, around α=0.28 K-1, a cell resistance Rcell = 3x107 Ω, and a high voltage responsivity, around

Microbolometers based on a-GexSi1-xOy (E. Iborra, 2002) have demonstrated high values of TCR, around α=0.042 K-1, a moderated cell resistance, Rcell = 7x105 Ω, and moderated

In our work, the planar structure microbolometers based on intrinsic a-GexSiy:H films have a very high value of TCR, around α=0.043 K-1, a current responsivity, RI=2x10-3 AW-1, a very

**Acell,** 

**Cell** 

**resistance,** 

**Rcell, Ohm** 

**Voltage** 

GexSi1-x Oy 0.32 0.042 50 x 50 7x105 1x105 - 6.7x108 E. Iborra, 2002 a-Si:H,B 0.22 0.028 48 x 48 3 x107 106 - - A. J. Syllaios,

**responsivi**

**tyRU, VW-1**

<sup>1</sup> 0.039 25 x 25 >109 - - - A. J. Syllaios,

**Currentres**

**ponsivity,** 

**RI, AW-1**

\* 2x10-3 7.9x109

\* 3x10-2 5.9x109

\* 7x10-2 2x109

\* 0.3 - 14 4x109

**Detectivit**

**y, D\*** 

**cmHz1/2W-1** 

<sup>107</sup> - - B. E. Cole, 1998

**References** 

2000

2000

Planar M. Moreno, 2008

Planar M. Moreno, 2008

Planar M. Moreno, 2008

Sandwich M. Moreno, 2008

**m2**

Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films 47

this work, containing intrinsic and boron alloys thermo-sensing films. Commercial planar structure microbolometers based on VOx films (B. E. Cole, 1998), present moderated values of TCR, around α=0.021 K-1 and high values of voltage responsivity, RU=2.5x107 VW-1. Another performance characteristics as detectivity, D\* are not published. The main drawback of these devices is their un-compatibility with Si CMOS technology, thus special installations are necessary for their fabrication, which make impossible to fabricate those

#### **8.1 Thermo-sensing film characterization**

Table 7 shows the most employed materials as thermo-sensing films in microbolometers. VOx is one of the most employed materials (B. E. Cole, 1998), however this material is not compatible with Si CMOS standard technology and its TCR is not very large, around 0.021 K-1. Amorphous GexSi1-xOy films have been employed in microbolometers (E. Iborra, 2002), these films are compatible with the CMOS technology and present a high TCR, around 0.042 K-1; however also have a high resistance.


Table 7. Most common thermo-sensing materials employed in microbolometers.

At the present time a-Si:H and boron doped a-Si:H are employed in large microbolometer arrays (A. J. Syllaios, 2000). Intrinsic a-Si:H is compatible with CMOS technology and has a very high TCR, around 0.1-0.13 K-1; however it is a highly resistive material, resulting in high resistive microbolometers which present a mismatch impedance with the readout circuits. Boron doped a-Si:H, has moderated resistivity, but also a reduced TCR, of 0.028 K-1. Therefore none of those materials can be considered the optimum one as thermo-sensing material in microbolometers. Intrinsic a-GexSiy:H films presents a large TCR, around 0.043 K-1, a moderated resistivivy and is compatible with the Si CMOS technology; those characteristics make this material suitable as thermo-sensing film for microbolometer arrays, however the resistivity is still an issue.

Amorphous germanium-silicon-boron alloys a-GexSiyBz:H, have been studied in order to reduce the high resistivity presented in intrinsic films. From the conductivity characterization in the thermo-sensing films, we can state that the a-GexSiyBz:H alloys demonstrated an increment in their conductivity (between 2 and 3 orders of magnitude) in comparison with that of the intrinsic a-GexSiy:H film. However the increment in σRT was accompanied by a reduction in TCR, to above 0.028 K-1.

The deposition rate in the boron alloys is above 2-3 times larger than that of the intrinsic film. Thus B incorporation during the thermo-sensing deposition, enhance the deposition rate. The deposition of the thermo-sensing films over a SiNx micro-bridge, has as consequence a reduction in the film conductivity, the stress arisen in the SiNx micro-bridge could be the cause for the σRT reduction. The a-GexSiyBz:H films compared with the another thermo-sensing materials, have better performance characteristics, which are: compatibility with the Si CMOS technology, moderated values of TCR, comparables with those of the VOx and a-Si:H films, and reduced resistivty. In general the a-GexSiyBz:H alloys have similar characteristics than those of the a-Si:H,B thermo-sensing film (A. J. Syllaios, 2000), but also have one order of magnitude shorter resistivity.

#### **8.2 Microbolometers characterization**

Table 8 shows the main performance characteristics of the microbolometers reported in literature, which are compared with the different microbolometer configurations studied in

Table 7 shows the most employed materials as thermo-sensing films in microbolometers. VOx is one of the most employed materials (B. E. Cole, 1998), however this material is not compatible with Si CMOS standard technology and its TCR is not very large, around 0.021 K-1. Amorphous GexSi1-xOy films have been employed in microbolometers (E. Iborra, 2002), these films are compatible with the CMOS technology and present a high TCR, around 0.042

**Material TCR (K-1) Ea (eV) σRT (Ω cm)-1 Reference**  VOx 0.021 0.16 2x10-1 B. E. Cole, 1998 a-Si:H (PECVD) 0.1 - 0.13 0.08-1 ~ 1x10-9 A. J. Syllaios, 2000 a-Si:H,B (PECVD) 0.028 0.22 5x10-3 A. J. Syllaios, 2000 a-GexSiy:H (PECVD)\* 0.043 0.34 1.6x10-6 M. Moreno, 2008 GexSi1-xOy 0.042 0.32 2.6x10-2 E. Iborra, 2002

At the present time a-Si:H and boron doped a-Si:H are employed in large microbolometer arrays (A. J. Syllaios, 2000). Intrinsic a-Si:H is compatible with CMOS technology and has a very high TCR, around 0.1-0.13 K-1; however it is a highly resistive material, resulting in high resistive microbolometers which present a mismatch impedance with the readout circuits. Boron doped a-Si:H, has moderated resistivity, but also a reduced TCR, of 0.028 K-1. Therefore none of those materials can be considered the optimum one as thermo-sensing material in microbolometers. Intrinsic a-GexSiy:H films presents a large TCR, around 0.043 K-1, a moderated resistivivy and is compatible with the Si CMOS technology; those characteristics make this material suitable as thermo-sensing film for microbolometer arrays,

Amorphous germanium-silicon-boron alloys a-GexSiyBz:H, have been studied in order to reduce the high resistivity presented in intrinsic films. From the conductivity characterization in the thermo-sensing films, we can state that the a-GexSiyBz:H alloys demonstrated an increment in their conductivity (between 2 and 3 orders of magnitude) in comparison with that of the intrinsic a-GexSiy:H film. However the increment in σRT was

The deposition rate in the boron alloys is above 2-3 times larger than that of the intrinsic film. Thus B incorporation during the thermo-sensing deposition, enhance the deposition rate. The deposition of the thermo-sensing films over a SiNx micro-bridge, has as consequence a reduction in the film conductivity, the stress arisen in the SiNx micro-bridge could be the cause for the σRT reduction. The a-GexSiyBz:H films compared with the another thermo-sensing materials, have better performance characteristics, which are: compatibility with the Si CMOS technology, moderated values of TCR, comparables with those of the VOx and a-Si:H films, and reduced resistivty. In general the a-GexSiyBz:H alloys have similar characteristics than those of the a-Si:H,B thermo-sensing film (A. J. Syllaios, 2000), but also

Table 8 shows the main performance characteristics of the microbolometers reported in literature, which are compared with the different microbolometer configurations studied in

Table 7. Most common thermo-sensing materials employed in microbolometers.

**8.1 Thermo-sensing film characterization** 

K-1; however also have a high resistance.

however the resistivity is still an issue.

accompanied by a reduction in TCR, to above 0.028 K-1.

have one order of magnitude shorter resistivity.

**8.2 Microbolometers characterization** 

this work, containing intrinsic and boron alloys thermo-sensing films. Commercial planar structure microbolometers based on VOx films (B. E. Cole, 1998), present moderated values of TCR, around α=0.021 K-1 and high values of voltage responsivity, RU=2.5x107 VW-1. Another performance characteristics as detectivity, D\* are not published. The main drawback of these devices is their un-compatibility with Si CMOS technology, thus special installations are necessary for their fabrication, which make impossible to fabricate those devices in any standard Si CMOS fabrication line.


Table 8. Comparison of characteristics of micro-bolometers with literature.

Planar structure microbolometers based on resistive a-Si:H, present high values of TCR, around α=0.1-0.13 K-1, however also have very high values of resistance. Comercial a-Si:H,B based planar structure microbolometers (A. J. Syllaios, 2000) have moderated values of TCR, around α=0.28 K-1, a cell resistance Rcell = 3x107 Ω, and a high voltage responsivity, around RU= 106 VW-1. However values of D\* are not reported.

Microbolometers based on a-GexSi1-xOy (E. Iborra, 2002) have demonstrated high values of TCR, around α=0.042 K-1, a moderated cell resistance, Rcell = 7x105 Ω, and moderated detectivity D\*=6.7 x108 cmHz1/2W-1.

In our work, the planar structure microbolometers based on intrinsic a-GexSiy:H films have a very high value of TCR, around α=0.043 K-1, a current responsivity, RI=2x10-3 AW-1, a very

Un-Cooled Microbolometers with Amorphous

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Comparison of Planar and Sandwich Structures of Micro-bolometers with Ge Thermo-sensing layer. *Thin solid films*, Vol. 515, pp. 7607-7610, ISSN 0040-6090. Moreno, M.; Kosarev, A.; Torres, A.; Ambrosio, R. (2008). Comparison of Three Un-Cooled

Micro-Bolometers Configurations Based on Amorphous Silicon-Germanium Thin Films Deposited by Plasma, *Journal of Non Crystalline Solids*, Vol. 354, pp. 2598-2602,

Measurements of thermal characteristics in silicon germanium un-cooled microbolometers. *Physica Status Solidi* C, C 7, No. 3–4, pp. 1172– 1175, ISSN 1610-1634. Pitigala, P.K.D.D.P.; Jayaweera, P.V.V.; Matsik, S.G.; Perera, A.G.U.; Liu H.C. (2011). Highly

sensitive GaAs/AlGaAs heterojunction bolometer, *Sensors and Actuators A,* Vol. 167

(2000). Amorphous silicon microbolometer technology, *Proceedings of Maerials Research Society - Amorphous and Heterogeneous Silicon Thin Films 2000*, Vol. 609,

Menolfi, C. (2001). Uncooled Low-Cost Thermal Imager Based on Micromachined

low current NSD, Inoise ≈ 1x10-15 AHz-1/2, resulting in a very high detectivity D\*= 7.9x109 cmHz1/2W-1. However those devices still have a high cell resistance, Rcell = 5x108 Ω.

The boron alloy planar structure microbolometers have a cell resistance, around Rcell ≈ (1-3) x106 Ω, which is two orders of magnitude shorter than that of the planar structure devices with intrinsic film and one order of magnitude shorter than that of the a-Si:H,B commercial devices (A. J. Syllaios, 2000). The current responsivity is around RI= (3-7)x10-2 AW-1, and the current NSD, Inoise ≈ 10-13 AHz-1/2, which results in a high detectivity D\*= (2-6) x109 cmHz1/2W-1.

The sandwich structure microbolometer with the intrinsic a-GexSiy:H film, presents the shortest cell resistance of the devices reported in literature, Rcell ≈ 1 x105 Ω, which is 3 orders of magnitude less than that of the planar devices with the same intrinsic film; one order of magnitude shorter than that of the boron alloy devices; 2 orders shorter than that of the a-Si:H,B devices; and near to 1 order of magnitude shorter than that of the a-GexSi1-xOy microbolometers. The TCR in sandwich structures is very high, around α=0.043 K-1, the current responsivity is in the range of RI= (0.3 -14) AW-1, which is around 2 - 3 orders of magnitude larger than that of the boron alloys (a-GexSiyBz:H) planar structure microbolometers and around 3 - 4 orders of magnitude larger than the intrinsic a-GexSiy:H film planar structure devices. However the sandwich structure presents a larger current NSD, Inoise ≈ 10-11 AHz-1/2, which results in a detectivity D\*= 4 x109 cmHz1/2W-1.

#### **9. Conclusion**

Uncooled microbolometers are reaching performance levels which previously only were possible with cooled infrared photon detectors. For uncooled infrared bolometer arrays based on amorphous silicon films the efforts have been conducted to increase the number of pixels included in the arrays, rather than improve the performance characteristics of the microbolometers. Plasma deposited amorphous germanium-silicon (a-GexSiy:H) and amorphous germanium-silicon-boron (a-GexSiyBz:H) used as thermo-sensing films provided a high TCR and, as a consequence, a high responsivity and high detectivity with a improved conductivity. Thus a-GexSiy:H and a-GexSiyBz:H are very promising materials for its integration on IR detector arrays, and its circuitry in the same chip, avoiding the problems of matching with the input impedance of the electronic circuits. Moreover the manufacture of those devices is aligned with standard CMOS and MEMS foundry processes.

#### **10. Acknowledgment**

The authors acknowledge: 1. CONACYT for the support for this research through the grant of projects no. D48454-F and 154112. 2. Dr Y. Kudriavtsev from CINVESTAV, Mexico, for SIMS characterization. 3. INAOE, Mexico, for the permission for reproduction of some figures from the Ph.D. thesis work of M. Moreno, titled "Study of IR un-cooled microbolometers arrays based on thin films deposited by plasma".

#### **11. References**

Ambrosio, R.; Torres, A.; Kosarev, A.; Illinski, A.; Zuniga, C.; Abramov, A. (2004). Low frequency plasma deposition and characterization of Si1-xGex:H:F films, *Journal of Non-crystalline Solids*, Vol. 338-340, pp. 91-96, ISSN 0022-3093.

low current NSD, Inoise ≈ 1x10-15 AHz-1/2, resulting in a very high detectivity D\*= 7.9x109

The boron alloy planar structure microbolometers have a cell resistance, around Rcell ≈ (1-3) x106 Ω, which is two orders of magnitude shorter than that of the planar structure devices with intrinsic film and one order of magnitude shorter than that of the a-Si:H,B commercial devices (A. J. Syllaios, 2000). The current responsivity is around RI= (3-7)x10-2 AW-1, and the current NSD, Inoise ≈ 10-13 AHz-1/2, which results in a high detectivity D\*= (2-6) x109

The sandwich structure microbolometer with the intrinsic a-GexSiy:H film, presents the shortest cell resistance of the devices reported in literature, Rcell ≈ 1 x105 Ω, which is 3 orders of magnitude less than that of the planar devices with the same intrinsic film; one order of magnitude shorter than that of the boron alloy devices; 2 orders shorter than that of the a-Si:H,B devices; and near to 1 order of magnitude shorter than that of the a-GexSi1-xOy microbolometers. The TCR in sandwich structures is very high, around α=0.043 K-1, the current responsivity is in the range of RI= (0.3 -14) AW-1, which is around 2 - 3 orders of magnitude larger than that of the boron alloys (a-GexSiyBz:H) planar structure microbolometers and around 3 - 4 orders of magnitude larger than the intrinsic a-GexSiy:H film planar structure devices. However the sandwich structure presents a larger current

Uncooled microbolometers are reaching performance levels which previously only were possible with cooled infrared photon detectors. For uncooled infrared bolometer arrays based on amorphous silicon films the efforts have been conducted to increase the number of pixels included in the arrays, rather than improve the performance characteristics of the microbolometers. Plasma deposited amorphous germanium-silicon (a-GexSiy:H) and amorphous germanium-silicon-boron (a-GexSiyBz:H) used as thermo-sensing films provided a high TCR and, as a consequence, a high responsivity and high detectivity with a improved conductivity. Thus a-GexSiy:H and a-GexSiyBz:H are very promising materials for its integration on IR detector arrays, and its circuitry in the same chip, avoiding the problems of matching with the input impedance of the electronic circuits. Moreover the manufacture

The authors acknowledge: 1. CONACYT for the support for this research through the grant of projects no. D48454-F and 154112. 2. Dr Y. Kudriavtsev from CINVESTAV, Mexico, for SIMS characterization. 3. INAOE, Mexico, for the permission for reproduction of some figures from the Ph.D. thesis work of M. Moreno, titled "Study of IR un-cooled micro-

Ambrosio, R.; Torres, A.; Kosarev, A.; Illinski, A.; Zuniga, C.; Abramov, A. (2004). Low

*Non-crystalline Solids*, Vol. 338-340, pp. 91-96, ISSN 0022-3093.

frequency plasma deposition and characterization of Si1-xGex:H:F films, *Journal of* 

cmHz1/2W-1. However those devices still have a high cell resistance, Rcell = 5x108 Ω.

NSD, Inoise ≈ 10-11 AHz-1/2, which results in a detectivity D\*= 4 x109 cmHz1/2W-1.

of those devices is aligned with standard CMOS and MEMS foundry processes.

bolometers arrays based on thin films deposited by plasma".

cmHz1/2W-1.

**9. Conclusion** 

**10. Acknowledgment** 

**11. References** 


**Part 2** 

**Bolometer Types and Properties** 

CMOS Integrated Sensor Array, *Journal of Microelectromechanical systems*, Vol. 10, No. 4, pp. 503-510. ISSN 1057-7157.

