**10. References**

[1] Weng W. Chow and Stephen W. Koch, Semiconductor Laser: Fundamentals (Berlin, Springer, 1999), 1.

4REs 3REs

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

InAs0.1Sb0.9/GaAs0.1Sb0.9/Al0.1Ga0.9As

Time (s)

The progress towards SOAs, and then QD-SOAs, is reviewed. The importance of Sb-based structures is illuminated. To see the effect of QD-SOA layers, a REs for QD, WL and SCH layers are solved numerically. This make us specify gain-input power relation for Sb-based QD-SOAs and then examine layers dynamics. Both QD and SCH layers are shown to have an importance in the static characteristics due to their considerable effect in structure confinement. WL is shown to affect carrier dynamics especially in the ES and GS. Global quasi-Fermi energy (which included SCH, WL, QD ES and QD GS) is shown to be important in the explanation of results. At all cases, the inclusion of the SCH in the REs is shown to be

We acknowledge our indebtedness to Prof. Mohammed Jasim Betti (Dept. of English, College of Education, Thi-Qar University) for proofreading the language of this work.

[1] Weng W. Chow and Stephen W. Koch, Semiconductor Laser: Fundamentals (Berlin,

Fig. 8. A comparison between three- and four-REs system for (a) WL carrier density, (b) ES and (c) GS occupation probabilities for InAs.1Sb.9/GaAs.1Sb.9/Al.1Ga.9As QD-SOA.

0

**8. Conclusions** 

essential.

**9. Acknowledgment** 

Springer, 1999), 1.

**10. References** 

0.1

0.2

0.3

0.4

Carrier Occupation Probability of GS

0.5

0.6

(c)

0.7

0.8

x 10-10


[18] P. Mock and others, "MOVPE grown self-assembled Sb-based quantum dots

[19] M. Mehta, A. Jallipalli, J. Tatebayashi, M. N. Kutty, A. Albrecht, G. Balakrishnan, L.

[21] H. Al-Husseini, Amin H. Al-Khursan, S. Al-Dabagh, "III-nitride QD lasers", Open

[22] Wei Zhang and M. Razeghi, "Antimony-Based Materials forElectro-Optics," in

[23] Shun-Lien Chuang, Physics of optoelectronic devices, (New York, J. Willy & sons,

Emitting at 1.65 μm," IEEE Phot. Tech. Lett. 19, no. 13 (2007) 1628. [20] Amin H. Al-Khursan, M. Al-Khakan, K. Al-Mossawi, "Third-order non-linear

Fundamentals and Applications 7, no. 3 (2009): 153.

Steiner, (Boston, Artech House, 2004) 229.

(2000): 209.

1995), 708.

Nanosci. J. 3, (2009): 1.

assessed by means of AFM and TEM," IEE Proc.-Optoelectronics 147, no. 3

R. Dawson, and D. L. Huffaker, "Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform

susceptibility in a three-level QD system," Photonics and Nanostructures –

Semiconductor nanostructures for optoelectronic applications, ed. Todd
