Preface

The book titled "Corrosion Resistance" has a significant meaning because the terminology "Corrosion Resistance" is one of the most important indications of materials under corrosion study and characterization.

The book has covered the state-of-the-art technologies, development, and research progress of corrosion studies in a wide range of research and application fields. The authors have contributed their chapters, each on their special field, on corrosion characterization and corrosion resistance. The applications of corrosion resistance materials will also bring great values to reader's work at different fields. In addition to traditional corrosion study, the book also contains chapters dealing with energy, fuel cell, daily life materials, corrosion study in green materials, and in semiconductor industry.

It has been an awarding process for me to learn from all the authors throughout the editing process. I would like to take this opportunity to express appreciation from my heart to all the authors for your contributions to this book. Your dedication and your enriched expertise will add value to this book. Your contribution will definitely be rewarded by the readers. I am very glad to see that the book "Corrosion Resistance" will become one of the critical books in Corrosion Sciences & Engineering.

Finally, I would like to express many thanks to InTech Open Access Publisher, particularly to Mrs. Marija Radja, Editor Relations Consultant, for her tremendous work. Without her help and dedication, it would be impossible to have this book published so smoothly.

> **Hong Shih, Ph.D.**  Etch Products Group, Lam Research Corporation Fremont, California, USA

**1** 

Hong Shih

*USA* 

**A Systematic Study** 

**and Characterization of Advanced** 

**Corrosion Resistance Materials and Their** 

*Etch Products Group, Lam Research Corporation, Fremont, California,* 

**Applications for Plasma Etching Processes in Semiconductor Silicon Wafer Fabrication** 

**Corrosion resistance** is a quantitative measure of materials under study in a special corrosion environment. With a continuous development in semiconductor IC industry on silicon wafer fabrication and the rapid shrinkage of silicon wafer feature size as of to 32nm, 25nm and even smaller, the requirement on **corrosion resistance chamber materials** under high density plasma becomes extremely critical and difficult. Therefore, the study, characterization and new development of **corrosion resistance chamber materials** have been a critical task for technologists in semiconductor IC industry. Without the correct selection of **corrosion resistance chamber materials**, it is impossible for semiconductor IC industry to achieve current technology levels. Among steps of semiconductor wafer fabrication, plasma dry etching is the most difficult and comprehensive step which has a

 Different from the traditional corrosion study, materials under high density plasma during dry etching processes should meet a comprehensive requirement. First of all, chamber materials must demonstrate a very **high corrosion/erosion resistance** under high density plasma during etching processes as well as in the defined wet chemicals. Since different etching processes use different reactive gases and chamber conditions, **chamber materials selected** have to vary in order to meet the variations of etch processes and chamber conditions. Secondly, chamber materials should have low particles and defects during etching processes because the particles and defects generated from chamber materials will fall on the silicon wafer, serve as the killer defects, and cause the loss of wafer production yield. Thirdly, chamber materials should avoid metal contamination issues on silicon wafer. The high metal contamination generated from chamber materials such as Na, K, Fe, Ni, Cr, Cu et al will electrically shorten the dies on a silicon wafer and directly impact wafer production yield. In addition to the above requirements for **advance corrosion resistance chamber materials**, chamber etching process stability and transparence, chamber impedance matching and stability, thermal and dielectric properties, capable of surface texturing, microstructure, wet cleaning compatibility, resistance to in-situ waferless plasma

very high standard for the selection of **corrosion resistance chamber materials**.

**1. Introduction** 
