**4. Acknowledgement**

The author would like to express great thanks to Professor H. W. Pickering and Professor D. D. Macdonald for their guidance during author's Ph.D. study at the Pennsylvania State University between 1981 and 1986. Great thanks to Professor F. B. Mansfeld for author's post doctor and research work at University of Southern California between 1986 and 1990. Thanks to Dr. M. W. Kendig and Professor W. J. Lorenz. Many thanks to Dr. Richard Gottscho, Dr. John Daugherty, and Dr. Vahid Vahedi at Lam Research Corporation. Both Lam Research Corporation and Applied Materials provided the author the opportunity to carry on the systematic study of advanced materials under high density plasma on plasma etching tools. The author would like to express thanks to many individuals during the study of chamber materials through the past 18 years. There have been hundreds of individuals who gave support and encouragement to the author. Due to the limitation of space, the author cannot list all the individuals. Some of the individuals are Dr. Duane Outka, Dr. Tuochuan Huang, Chris Chang, Patrick Barber, Declan Hayes, Dr. Shun Wu, Dr. Harmeet Singh, Dr. Yan Fang, Dr. Armen Avoyan, Dr. Siwen Li, Shenjian Liu, Dr. Qian Fu, Dr. Steve Lin, Nianci Han, Dr. Peter Loewenhardt, Dr. Diana Ma, Mike Morita, Tom Stevenson, Sivakami Ramanathan, John Mike Kerns, Dean Larson, Alan Ronne, Hilary Haruff, David

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and Their Applications for Plasma Etching Processes in Semiconductor Silicon Wafer Fabrication 29

[16] Hong Shih, Qian Fu, Tuochuan Huang, Raphael Casaes, and Duane Outka, "Extending

[17] Josh Cormier, Fangli Hao, Hong Shih, Allan Ronne, John Daugherty, and Tuochuan

[18] John M. Kerns, Yan Fang, Hong Shih, and Allan Ronne, "Silicon Gas Line Coating for

[19] Hong Shih, Duane Outka, Shenjian Liu, and John Daugherty, "Extending Lifetime of

[22] N. Han, Hong Shih, Danny Lu, and Diana Ma, "A Ceramic Composition of An

[23] Hong Shih, N. Han, S. Mak, and G. Yin, "Boron Carbide Parts and Coatings in A Plasma Reactor", European Patent Number. EP0849767, Publication Date: June 24, 1998. [24] Hong Shih, N. Han, S. Mak, and G. Yin, "Boron Carbide Parts and Coatings in A Plasma Reactor", European Patent Number. EP0849767, Publication Date: March 21, 2001. [25] Tuochuan Huang, Daxing Ren, Hong Shih, Catherine Zhou, Chun Yan, Enrico Magni,

[26] Hong Shih, Nianci Han, Jie Yuan, Danny Lu, and Diana Ma, "Ceramic Composition for

[27] Tuochuan Huang, Daxing Ren, Hong Shih, Catherine Zhou, Chun Yan, Enrico Magni,

[28] Hong Shih, Duane Outka, Shenjian Liu, and John Daugherty, "Extending Lifetime of

[29] Hong Shih, N. Han, S. Mak, and G. Yin, "Boron Carbide Parts and Coatings in A Plasma

[30] Hong Shih, Duane Outka, Shenjian Liu, and John Daugherty, "Extending Lifetime of

Publication Number : (WO 2008/088670), Publication Date: 07/17/2008 [20] Hong Shih, Saurabh Ullal, Tuochuan Huang, Yan Fang, and Jon McChesney, "System

Corporation, Publication Number: WO 2010/042908, April 15, 2010. [21] Hong Shih, Nianci Han, Jennifer Y. Sun, and Li Xu, "Diamond Coated Parts in A

Storage Time of Used Y2O3 Coated Ceramic Window before Wet Cleaning", US

Huang, "Automatic Hydrogen Bubble Detection and Recording System for the Study of Acidic Corrosion Resistance for Anodized Aluminum and Surface Coatings", Lam Research Patent Invention Disclosure P2232, Filed for US Patent on

Semiconductor Applications", Lam US Patent Application, Docket No: 2287, May 5,

Yttrium Oxide As A Plasma Chamber Material", Lam Research Patent Application,

and Method for Testing An Electrostatic Chuck", Assignee: Lam Research

Plasma Reactor", Assignee: Applied Materials, Publication Number:

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Bi Ming Yen, Jerome Hubacek, Danny Lim and Dougyong Sung, "Methods for Silicon Electrode Assembly Etch Rate and Etch Uniformity Recovery", European

An Apparatus and Method for Processing A Substrate", Applied Materials, July

Bi Ming Yen, Jerome Hubacek, Danny Lim and Dougyong Sung, "Methods for Silicon Electrode Assembly Etch Rate and Etch Uniformity Recovery", Lam Research Corporation, China Patent Application No: CN200580044362, March 2008.

Yttrium Oxide As A Plasma Chamber Material", Lam Research Patent Application,

Reactor", Assignee: Applied Materials, Singapore Patent Application Number:

Yttrium Oxide As A Plasma Chamber Material", Lam Research Patent Application,

Song, Dr. You Wang, Dr. Yan Chun, Dr. Qi Li, Dr. Allan Zhao, Joe Sommers, Dr. Griff O'Neil, Dr. Raphael Casaes, Dr. T. W. Kim, Dr. Lin Xu, Dr. Catherine Zhou, Dr. Yijun Du, Dr. Daxing Ren, Ho Fang, May He, Josh Cormier, Fangli Hao, Dr. Steve Mak, Dr. Gerald Yin, Dr. Xikun Wang, Dr. Danny Lu, Yoshi Tanase, Dr. Samantha Tan, Dr. Fuhe Li, Shang-I Chou, Tim. Su, John Holland, Peter Holland, Jason Augustine, Dr. Y. L. Huang, Lucy Chen, Jie Yuan, Hui Chen, Li Xu, Charlie Botti, Han Sellege, Dr. Arthur W. Brace, and many others.

#### **5. List of related patents**


Song, Dr. You Wang, Dr. Yan Chun, Dr. Qi Li, Dr. Allan Zhao, Joe Sommers, Dr. Griff O'Neil, Dr. Raphael Casaes, Dr. T. W. Kim, Dr. Lin Xu, Dr. Catherine Zhou, Dr. Yijun Du, Dr. Daxing Ren, Ho Fang, May He, Josh Cormier, Fangli Hao, Dr. Steve Mak, Dr. Gerald Yin, Dr. Xikun Wang, Dr. Danny Lu, Yoshi Tanase, Dr. Samantha Tan, Dr. Fuhe Li, Shang-I Chou, Tim. Su, John Holland, Peter Holland, Jason Augustine, Dr. Y. L. Huang, Lucy Chen, Jie Yuan, Hui

[1] Hong Shih and M. S. Mekhjian, "Method and Apparatus for Determining the Quality of

[2] Hong Shih and M. S. Mekhjian, "Apparatus for Measuring A Coating on A Plate", USA

[3] Hong Shih, N. Han, S. Mak, and G. Yin, "Boron Carbide Parts and Coatings in A Plasma

[4] Hong Shih, Nianci Han, Jie Yuan, Danny Lu, and Diana Ma, "Ceramic Composition for

[5] N. Han, Hong Shih, J. Yuan, D. Lu, and D. Ma, "Ceramic Composition for An Apparatus

[6] Hong Shih, Joe Sommers, and Diana Ma, "Method for Monitoring the Quality of A

[7] N. Han, Hong Shih, J. Y. Sun, Li Xu "Diamond Coated Parts in A Plasma Reactor", USA

[8] Hong Shih, Nianci Han, Jie Yuan, Joe Sommers, Diana Ma, Paul Vollmer, "Corrosion-

[9] Nianci Han, Hong Shih, Jie Yuan, Danny Lu, and Diana Ma, "Substrate Processing Using

[10] Hong Shih and Nianci Han, "Coating Boron Carbide on Aluminum", USA Patent No.

[11] N. Han, Hong Shih, and Li Xu, "Process Chamber Having Component with Yttrium-Aluminum Coating", USA Patent No. 6,942,929, September 13, 2005. [12] Hong Shih, Duane Outka, Shenjian Liu, and John Daugherty, "Extending Lifetime of

[13] Harmeet Singh, John Daugherty, Vahid Vahedi, and Hong Shih, "Components for Use

[14] Hong Shih, "Method for Refurbishing Bipolar Electrostatic Chuck", Assignee: Lam Research Corporation, Publication Number US 2010/0088872 A1, April 15, 2010. [15] Hong Shih, Saurabh Ullal, Tuochuan Huang, Yan Fang, and Jon McChesney, "System

Corporation, Publication Number US 20100090711 A1, April 15, 2010.

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Resistant Protective Coating for An Apparatus And Method for Processing A

a Member Comprising An Oxide of A Group IIIB Metal", USA Patent No.

Yttrium Oxide As A Plasma Chamber Material", Lam Research Patent Application, Publication Number: US20080169588, Publication Date : 07/17/2008: Database : US

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Chen, Li Xu, Charlie Botti, Han Sellege, Dr. Arthur W. Brace, and many others.

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[16] C. Y. Chang, "Semiconductor Manufacturing Equipment", Wunan Publishing Co., Ltd.,

[17] C. Y. Chang, "Deep Submicron Silicon Processing Technology", Wunan Publishing Co.,

[18] Masanori Kikuchi, "Graphics of Semiconductor", Nippon Jitsagyo Publishing, Co., Ltd.,

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[24] H. Shih, N. Han, S. Mak, and G. Yin, "Development and Characterization of Materials

[25] H. Shih and D. Ma, "Revolutionary Chamber Materials for Metal Etch", SEMICON West

[26] H. Shih, "Defect Density Reduction of 0.18m and Beyond", Presentation on SEMICON

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[28] H. Shih and J. Daugherty, "Systematic Study of Yttrium Oxide Coating on Anodized

[31] H. Shih and Patrick Barber, "Materials Laboratory Development for Anodized

[32] H. Shih, T. C. Huang, S. Wu, and J. Daugherty, "Summary of Corrosion Study During

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Technical Report, Lam Research Corporation, September 28, 2006.

Seibundo Shinko-sha Publishing Co., Ltd., Toyko, 2001, translated by Zhou Yong Xu

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Dielectric Materials for Next Generation Etch Chamber Materials", Applied Materials ET Conference Paper No. 455, Oral Presentation at San Jose State

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180 days Immersion in 3.5wt% NaCl Solution", Lam Research Confidential

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**2** 

*Argentina* 

**Corrosion Resistance of Directionally** 

Alicia Esther Ares1,2,3, Liliana Mabel Gassa1,4

*Faculty of Sciences, National University of Misiones, Posadas,* 

*2Materials, Modeling and Metrology Program,* 

and Claudia Marcela Mendez3 *1 Researcher of CIC, CONICET,* 

**Solidified Casting Zinc-Aluminum Matrix** 

*3Materials Laboratory, Faculty of Sciences, National University of Misiones, Posadas, 4INIFTA, National University of La Plata, Faculty of Exact Sciences, La Plata,* 

Generally solidification leads to two types of grain morphologies: columnar and equiaxed. The origin of each one has been the subject of numerous theoretical and experimental researches in the field of metallurgy for many years. Columnar grains often grow from near the mold surface, where the thermal gradients are high, and the growth is preferentially oriented in a direction close to the heat flux. When the gradients are reduced near the center of the casting, equiaxed grains grow in all space directions leading to a material with more isotropic macroscopic mechanical properties and a more homogeneous composition field than with columnar structure. Depending on the application, one type of grain is preferred and thus favoured, e.g. equiaxed grains in car engines and columnar grains in turbine

Since the grain structure inuences the properties of a casting, a great deal of effort has been devoted in the last decades to understand the mechanism behind the development of the macrostructure during solidication. Thus, equiaxed grains can nucleate and grow ahead of the columnar front causing an abrupt columnar to equiaxed transition (CET) whose prediction is of great interest for the evaluation and design of the mechanical properties of solidified products. As a consequence, it is critical for industrial applications to understand the physical mechanisms which control this transition during solidification (Spittle, 2006).

In order to realize the control of the columnar and equiaxed growth, it is necessary to understand the columnar to equiaxed transition (CET) mechanism during solidification, and make clear the CET transition condition. Fundamentally, it is necessary to have knowledge of the competition between nucleation and growth during solidification. Qualitatively, the CET occurs more easily when an alloy has a high solute concentration, low pouring temperature (for casting), low temperature gradient, high nucleation density in the melt and

blades as reported by Reinhart et al, 2005 and McFadden et al., 2009.

**1. Introduction** 

vigorous melt convection.

