**2.2.3 B parameter measurement system**

We used the following equation to calculate the B parameter [16-17] of Dill based the resist transmission factor at the time overexposure completely breaks down the PAG.

$$B = -\frac{1}{d} \ln \left( T\_{\ll} \right) \tag{1}$$

We used a development analyzer to measure development parameters. When homogeneous light is irradiated onto a resist film during development, the light waves reflected from the resist surface and light waves reflected from the wafer surface interfere, generating unique waveforms. Analyzing the waveforms of the reflected light allows us to obtain resist development rates. By varying exposure values and measuring resist development rates at different exposures, we can calculate the development parameter, among the simulation parameters [15]. This measurement has been performed before using a monitor wavelength of 470 nm. However, thin films do not generate the interference needed, and a monitor wavelength of 470 nm limits us to resist film thicknesses exceeding 100 nm. Since the film thickness of EUV resists ranges from approximately 50 to 100 nm, we developed a measurement system for our experiments based on a monitor wavelength of 265 nm

**2.2.2 Development parameter measurement system** 

Fig. 11. Resist development analyzer RDA-800EUV

We used the following equation to calculate the B parameter [16-17] of Dill based the resist

( ) <sup>1</sup> *B T* = − ln <sup>∞</sup> *<sup>d</sup>* (1)

transmission factor at the time overexposure completely breaks down the PAG.

**2.2.3 B parameter measurement system** 

(Fig.11).

Here, *d* is resist film thickness and T∞ the resist transmission factor at the time overexposure completely breaks down the PAG. We developed a system for measuring the resin transmission factor using EUV light. Incorporating a LPP light manufactured by Toyota Macs as its light source and using a solid Cu target, this system irradiates EUV light onto a Si/Mo multilayer reflecting mirror to measure reflection intensity, while mirror angles are varied. To calculate the spectral transmission factor, we used the difference in reflectance between the case in which resist is applied to the multilayer mirror and the case in which no resist is applied.

Fig.12 illustrates the measurement system and gives a chart of the results of spectral transmission factor calculations for the MET resist.

Fig. 12. B parameter measurement system using EUV exposure
