**1.4 Simulation**

We performed a simulation using the EUV-PM2 development data. Table 4 gives the simulation conditions.


Table 4. Simulation conditions (with Nikon HiNA-3)

We examined L&S\*1 patterns and isolated patterns with pattern dimensions of 65, 55, 45, 32, and 22 nm. Defocus was examined using a 32 nm L&S pattern. Figures 6 through 8 show the simulation results. With L&S patterns, resolution can be maintained up to 32 nm. For isolated patterns, the results suggest that resolution on the order of 22 nm is within reach. In the defocus simulation, the simulation results support estimates of an attainable resolution range of -0.1 to +0.1 μm.

\*1L&S: Line and space

Fig. 6. Simulation results (65-22 nm Line and space patterns)

We performed a simulation using the EUV-PM2 development data. Table 4 gives the

Wavelength (nm) 13.5

Table 4. Simulation conditions (with Nikon HiNA-3)

Fig. 6. Simulation results (65-22 nm Line and space patterns)

NA 0.3 σ 0.8 Reduction 1/5

We examined L&S\*1 patterns and isolated patterns with pattern dimensions of 65, 55, 45, 32, and 22 nm. Defocus was examined using a 32 nm L&S pattern. Figures 6 through 8 show the simulation results. With L&S patterns, resolution can be maintained up to 32 nm. For isolated patterns, the results suggest that resolution on the order of 22 nm is within reach. In the defocus simulation, the simulation results support estimates of an attainable resolution

**1.4 Simulation** 

simulation conditions.

range of -0.1 to +0.1 μm.

\*1L&S: Line and space

Fig. 7. Simulation results (65-22 nm Isolated patterns)

Fig. 8. Simulation results (32 nm L&S/defocus -0.13~+0.13μm)

Approach to EUV Lithography Simulation 177

The conventional EUVL simulation method involves obtaining parameters by exposing the resist to EUV. However, EUV exposure equipment is costly, and the types of exposure equipment available are limited. For these reasons, we explored the possibility of performing EUVL simulations using parameters obtained with KrF exposures. The idea was that if we detected no significant differences between parameters obtained with KrF and EUV exposures, we could use the simpler KrF exposure method to obtain valid simulation parameters for EUVL. Using EUV resists, we obtained parameters by performing both KrF and EUV exposures, then compared the parameters and simulation results. This chapter

Fig.10 shows the exposure equipment used in our parameter measurements. The exposure area is an open-frame pattern measuring 10 mm x 10 mm. We used a UVES-2000 for KrF

These exposure tools permit resist exposures on Si wafers and the acquisition of

discusses this comparison.

**2.2 Simulation parameter measurement system** 

**2.2.1 Exposure equipment for parameter measurement** 

exposures and an EUVES-7000 [14] for EUV exposures.

Fig. 10. Open frame exposure tool for KrF and EUV

development and PEB parameters.
