**2.2.4 De-protection reaction parameter and C parameter measurement system**

Fig.13 gives an overview of the PEB parameter measurement system, which exposes resist on an Si wafer using KrF and EUV light. In the next step, we used an FT-IR system with a bake function to plot the de-protection reaction curve while performing PEB. We performed measurements at different PEB temperatures and measured the de-protection reaction parameter by fitting. During the course of fitting, we also obtained the C parameter for Dill. We modified the system [18] to allow irradiation of IR light for measurements on resist film at an angle of 45 degrees and to permit use with a resist film thickness of 50 nm. The resulting system was capable of handling extra-thin resist films ranging from 50 to 100 nm.

Approach to EUV Lithography Simulation 181

Fig.14 shows B parameter measurement results. With KrF exposures, MET-1K and MET-2D yielded values of 0.726 and 0.788, respectively. With EUV exposures, MET-1K and MET-2D yielded 4.32 and 5.21, respectively, indicating greater absorption with EUV exposures.

**2.3.1 B parameter measurement results** 

Fig. 14. B parameter measurement results

exposures.

**2.3.2 Development parameter measurement results** 

Fig.15 compares measurements of the discrimination curve (a logarithmic plot of development rates and exposure values) development parameter. We found no significant differences between development parameter values obtained with KrF and EUV

Fig. 13. PEB parameter measurement system
