**2.2 Simulation parameter measurement system 2.2.1 Exposure equipment for parameter measurement**

Fig.10 shows the exposure equipment used in our parameter measurements. The exposure area is an open-frame pattern measuring 10 mm x 10 mm. We used a UVES-2000 for KrF exposures and an EUVES-7000 [14] for EUV exposures.

Fig. 10. Open frame exposure tool for KrF and EUV

These exposure tools permit resist exposures on Si wafers and the acquisition of development and PEB parameters.

Approach to EUV Lithography Simulation 179

Here, *d* is resist film thickness and T∞ the resist transmission factor at the time overexposure completely breaks down the PAG. We developed a system for measuring the resin transmission factor using EUV light. Incorporating a LPP light manufactured by Toyota Macs as its light source and using a solid Cu target, this system irradiates EUV light onto a Si/Mo multilayer reflecting mirror to measure reflection intensity, while mirror angles are varied. To calculate the spectral transmission factor, we used the difference in reflectance between the case in which resist is applied to the multilayer mirror and the case in which no

Fig.12 illustrates the measurement system and gives a chart of the results of spectral

resist is applied.

100 nm.

transmission factor calculations for the MET resist.

Fig. 12. B parameter measurement system using EUV exposure

**2.2.4 De-protection reaction parameter and C parameter measurement system** 

Fig.13 gives an overview of the PEB parameter measurement system, which exposes resist on an Si wafer using KrF and EUV light. In the next step, we used an FT-IR system with a bake function to plot the de-protection reaction curve while performing PEB. We performed measurements at different PEB temperatures and measured the de-protection reaction parameter by fitting. During the course of fitting, we also obtained the C parameter for Dill. We modified the system [18] to allow irradiation of IR light for measurements on resist film at an angle of 45 degrees and to permit use with a resist film thickness of 50 nm. The resulting system was capable of handling extra-thin resist films ranging from 50 to
