**1.5 Conclusion**

The VLES consists of the EUVES-7000 EUV open-frame exposure system, RDA-800EUV development rate analyzer, and Prolith lithography simulator. We used the VLES to compare the sensitivity and development contrast of negative- and positive-type resists with EUV exposure. We also simulated EUV exposures using development rate data for the EUVR-2, which showed the highest development contrast of all resists tested. The results of the experiment suggest that it should be possible to obtain resolutions of 32 nm with L&S patterns and 22 nm with isolated patterns. We also calculated defocus characteristics with a 32 nm L&S pattern. Based on these calculations, we estimate a focus margin of approximately 0.2 μm in defocus width. We believe using the system as described in this paper will permit the development of photoresist materials for EUV and expedite process development without requiring the purchase of costly EUV exposure equipment.
