**1. Introduction**

Silicon carbide (SiC), a compound composed of silicon and carbon, has emerged as a remarkable material with a wide range of applications, revolutionizing various industries and research fields. Known for its exceptional mechanical strength and high thermal conductivity to its excellent electrical properties and wide bandgap, SiC has captured the attention of scientists and offers a myriad of possibilities for technological advancements [1–9].

Ion implantation stands as a pioneering technique at the forefront of materials engineering. This technique has opened new avenues for tailoring and enhancing the structural, optical, and electrical characteristics of materials. Interestingly, oblique ion implantation, a specialized technique within ion beam modification, has emerged as a powerful method for tailoring material properties with unprecedented precision. Unlike traditional perpendicular ion implantation, oblique implantation involves the controlled bombardment of a target material at an angle, introducing ions into the

surface with an oblique trajectory. This unique approach opens a realm of possibilities, allowing engineers and researchers to engineer intricate structures, manipulate surface morphology, and optimize material characteristics in ways that were once considered challenging or even unattainable [8–17].

Oblique ion implantation offers a distinct set of advantages, enabling the creation of anisotropic material modifications, surface patterning, and enhanced doping profiles. By varying the implantation angle, energy, and ion species, it becomes possible to engineer intricate 2D and 3D surface features effectively on a micro and nanoscale level. These tailored structures find applications across diverse fields, from microelectronics and optoelectronics to biomaterials and sensor technologies. Thus, by carefully controlling the ion implantation parameters, it is possible to engineer SiC with tailored structural and surface properties to meet the requirements of specific applications [9–15].

Thus, the present work investigates the structural, optical, and electrical properties of oblique argon-sputtered silicon carbide surfaces. As a novelty, we study the surface characteristics of unexplored SiC/Si(111) surfaces at oblique argon ion implantation with the aim of quantifying the dependence of structural, optical, and electrical behavior on the ion fluence. The oblique ion beam erosion, causing the removal of the surface target atoms, is the pivotal mechanism in this low-energy region. The investigations of optical and electrical response in combination with the structural modifications taking place in the silicon carbide thin film surfaces have been studied.
