*Ion Beam Application to Nuclear Material Damage Assessment DOI: http://dx.doi.org/10.5772/intechopen.111512*

used ion implantation, the semiconductor industry was known to have employed this method to process semiconductor production components [23]. Nevertheless, the use of IBT in the nuclear sector has resulted in a plethora of unique research projects and methodologies, resulting in the industry's expansion in delivering novel materials for design purposes. Whereas the previous generation of nuclear power plants limited the use of electronic devices to an unavoidable extent, recent nuclear plants rely on electronics not only in digital computers and process control systems in a mild environment but also in harsh radiation conditions.

Several approaches to ion doping are employed by the industry. Some of the few ones are Ion Implantation (II), Ion Beam Mixing (IBM), Ion Beam Assisted Deposition (IBAD), Plasma Source Ion Implantation (PSII), Plasma Source Ion Deposition (PSID), Metal Vapor Vacuum Arc (MEVVA). These approaches have their pros and cons making them accepted in different spheres. All of these and many other approaches have been widely employed in the ion implantation of materials for industrial purposes. The approach chosen will be determined by the target material and the sort of testing being performed.

Another important use of Ion Beam Technology in the nuclear sector is radiation damage assessment. As a result, the next section will go over the topic in depth.
