**Figure 14.**

*Shows images of the sizing process of the selected sample, (a) sample, (b) cuts to limit the sample, (c) delimitation of the depth and (d) sample ready to be extracted.*

area the removal process takes minutes, and the material removed by the sputtering process is evacuated from the chamber via the vacuum system of the microscope. This sizing system can be used on a wide range of materials without causing contamination or modification of the sample microstructure.

**Figure 15** shows a series of images of the sample extraction process, as well as the preliminary cuts, welding of the sample with the extraction needle and the extraction process, these steps are very delicate because the sample can be lost in case of hitting the wall of the groove from which it is extracted.

The last stage of the process consists of transferring the sample to a sample holder where the thickness of the sample will be reduced via sputtering to a thickness of 100 nm. **Figure 16** shows the image of the sample placed in the sample holder.

This sampling process allows obtaining samples with very high precision and relatively very fast, which is a consequence of the high spatial resolution of sputtering, which is determined by the precision with which the beam diameter is controlled.

*Surface Microstructure Changes Induced by Ion Beam Irradiation DOI: http://dx.doi.org/10.5772/intechopen.112015*
