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023116.

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1133.


**14** 

*Japan* 

**Transparent Conducting** 

**Heterojunction Solar Cells** 

Mickael Lozac'h1 and Masatomo Sumiya1

*2Institute of Science and Technology Research, Chubu University, Matsumoto, Kasugai, Aichi, 3Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, Yanagido, Gifu,* 

**Polymer/Nitride Semiconductor** 

Nobuyuki Matsuki1,3, Yoshitaka Nakano2, Yoshihiro Irokawa1,

Energy supplies that depend on fossil fuels evoke significant concern about the future depletion of those resources and the emission of carbon dioxide and sulfidizing gas, which are believed to cause environmental problems including climate change and acid precipitation (Solomon et al., 2007). Solar cells, which convert sunlight directly to electric power, are one of the most promising devices for a clean and enduring energy source. The standard energy-weighted power density of sunlight, which is defined as air mass 1.5, is 1kW/m2 under clear and sunny weather conditions (Myers et al., 2000). The maximum available amount of sunlight is usually lower than the value described above due to the

Thus, the first important aim for developing a solar cell is to derive the highest possible photovoltaic conversion efficiency from the utilized materials and structure. When a solar cell with a single bandgap, *E*g, is exposed to the solar spectrum, a photon with less energy than *E*g does not contribute to the cell output. Therefore, a multilayer structure comprising a variety of bandgaps is effective for the collection of photons in a wide range of the solar

The current (2010) best research-cell efficiencies of typical solar cells are as follows (Green, 2010): crystalline Si (25.0%), multicrystalline Si (20.4%), crystalline GaAs (26.4%), CuInGaSe (19.4%), CdTe (16.7%), amorphous Si (10.1%), dye-sensitized polymers (10.4%), and organic polymers (5.15%). In addition to these, there have been a number of studies focused on developing "third-generation photovoltaics" with ultra-high conversion efficiencies at a low cost (Green, 2001). More recently, after the discovery of the wide band gap range of 0.65–3.4 eV in InxGa1-x N, this material is considered to be one of the most promising candidates for

**1. Introduction** 

spectrum.

weather and the total hours of sunlight in the region.

third-generation photovoltaic cells.

*1National Institute for Materials Science, Namiki, Tsukuba, Ibarak,* 

