**2.2.1 Isothermal capacitance transient spectroscopy**

ICTS is used to analyze the profiling of lattice defects in the SCR of the semiconductor. It can be done through three different methods. The first one is obtained by fixing *V*R and varying *V*<sup>p</sup> to build difference of transients among the SCR of the device. The second method is evaluated by measuring at constant *V*p and varying *V*R. The last option is obtained by varying *V*R and *V*p, where the profiling analysis is also possible without building difference of transients. Using the first method, the medium trap density *<sup>T</sup> N xij* ( ) at a point *ij x* is given by

$$\overline{N}\_{\rm I}(\mathbf{x}\_{\bar{\rm y}}) = \frac{2 \, N\_{\rm D} (\varepsilon \mathbf{x}\_{\mathbf{o}})^2 A^2}{C\_{\rm R}^3} \frac{\Delta \mathbf{C}\_{\bar{\rm y}}}{\left(L\_{\rm \bar{y}}^2 - L\_{\rm \bar{y}}^2\right)} \tag{9}$$

where Cij is the amplitude difference of the two capacitance transients.
