**Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy**

Boussairi Bouzazi1, Hidetoshi Suzuki2, Nobuaki Kijima1, Yoshio Ohshita1 and Masafumi Yamaguchi1 *1Toyota Technological Institute 2Myazaki University Japan* 
