**3.2.3 The optimizing-scale 3-D Abacus**

According to precedent analyses, along with the definitions presented in § 3.2, it was obvious that any judicious material choice must take into account simultaneously and conjointly the three defined parameters: the band gap E , Vickers Microhardness H <sup>g</sup> υ and The Optothermal Expansivity ψAB . The new 3D abacus (Fig. 2) gathers all these parameters and results in a global scaling tool as a guide to material performance evaluation.

Fig. 2. The 3D abacus

For particular applications, on had to ignore one of the three physical parameters gathered in the abacus. The following 2D projections have been exploited:

The projection in Hυ - Eg plane, which is interesting in the case of a thermally neutral material.

It is the case, i.e. of the ZnS1-xSex compounds, it is obvious that the consideration of Band gap-Haredness features is mor important than thermal proprieties. The E - H <sup>g</sup> υ projection (Fig. 3) gives relevant information: the selenization process causes drastical loss of hardness in initially hard binary Zn-S material.

A New Guide to Thermally Optimized Doped Oxides Monolayer

Fig. 5. The 3D abacus ( ψAB *-* Hυ projection)

**3.3 Investigation of the selected materials** 

**3.3.1 ZnO and ZnO-doped layers** 

compounds were among the most interesting ones.

Spray-Grown Solar Cells: The Amlouk-Boubaker Optothermal Expansivity

conductor materials, which is the case of the ZnIn2S4 materials.

The projection in ψAB *-* Hυ plane is useful for distinguishing resistant and good heat

In fact the effect of the Zinc-to-Indium ratio on the values of the Amlouk-Boubaker optothermal expansivity (Fig. 5) is easily observable in this projection (it is equivalent to an

According to the information given by the 3D abacus (Figures 3-5), some materials have been selected. ZnO and ZnO-doped layered materials, SnO2 and SnO2:F/SnO2:F-SnS2

Zinc oxide (ZnO) is known as one of the most multifunctional semiconductor material used in different areas for the fabrication of optoelectronic devices operating in the blue and ultra-violet (UV) region, owing to its direct wide band gap (3.37 eV) at room temperature and large exciton binding energy (60 meV) (Coleman & Jagadish, 2006). On the other hand, it is one of the most potential materials for being used as a TCO because of its high electrical

Zinc oxide can be doped with various metals such as aluminium (Benouis et al., 2007) indium (Benouis et al., 2010), and gallium (Fortunato et al., 2008). The conditions of deposition and the choice of the substrate are important for the growth of the films (Benhaliliba et al., 2010). The substrate choosen must present a difference in matching lattice less than 3% to have good growth of the crystal on the substrate (Teng et al., 2007; Romeo et

conductivity and high transmission in the visible region (Fortunato et al., 2009).

expansion of the values of the parameter ψAB into a wide range: [10-20] 10-11 m3s-1).

AB 33

Fig. 3. The 3D abacus ( E - H <sup>g</sup> υ projection)

This projection in ψAB *-* Eg plane is suitable for thick layers whose mechanical properties don't contribute significantly to the whole disposal hardness.

Fig. 4. The 3D abacus ( ψAB *-* E projection) g

This projection in ψAB *-* Eg plane is suitable for thick layers whose mechanical properties

Fig. 3. The 3D abacus ( E - H <sup>g</sup> υ projection)

Fig. 4. The 3D abacus ( ψAB *-* E projection) g

don't contribute significantly to the whole disposal hardness.

The projection in ψAB *-* Hυ plane is useful for distinguishing resistant and good heat conductor materials, which is the case of the ZnIn2S4 materials.

In fact the effect of the Zinc-to-Indium ratio on the values of the Amlouk-Boubaker optothermal expansivity (Fig. 5) is easily observable in this projection (it is equivalent to an expansion of the values of the parameter ψAB into a wide range: [10-20] 10-11 m3s-1).

Fig. 5. The 3D abacus ( ψAB *-* Hυ projection)
