Meet the editor

Dr. Yao-Feng Chang is a TD Q&R Memory Reliability staff at Intel. He received a Ph.D. in Electrical and Computer Engineering from the University of Texas at Austin, USA, in 2015. His primary research focuses on emerging electronics and memory devices for advanced technology nodes for storage, computation, and energy-efficient integrated systems. He has published more than 100 journal publications and conference proceed-

ings, and 5 filed patents.

## Contents



Preface

Ruthenium (Ru) is a promising next-generation interconnect material for backend-of-line (BEOL)-compatible processes owing to its low resistance to oxide, high

The potential of material properties and device characterizations can be exploited in the immediate future if more efficient hardware and devices are developed that meet the special requirements of high-performance computing in scaling schemes. In this book, we discuss the basic materials properties and potential device characterizations of Ru in various advanced applications, such as non-volatile memory technology (not restrained to any type of device) in combination with various hardware applications. This book provides a platform for interdisciplinary research into materials science with emerging physical substrates. It includes studies in areas such as material and physic modeling, materials physics and analytics, devices in miniature scale, advanced functional circuits, high-speed computing systems and integration for logic applications, and other novel emerging device concepts and circuit schemes for

> **Yao-Feng Chang** Intel Corporation, United States of America

melting point, and low bulk resistivity.

potential biomimetic smart systems.
